ATE46784T1 - Festwertspeicher-fet-zelle mit vergroesserter bitleitungsvorladung durch eine wortleitung. - Google Patents

Festwertspeicher-fet-zelle mit vergroesserter bitleitungsvorladung durch eine wortleitung.

Info

Publication number
ATE46784T1
ATE46784T1 AT84108711T AT84108711T ATE46784T1 AT E46784 T1 ATE46784 T1 AT E46784T1 AT 84108711 T AT84108711 T AT 84108711T AT 84108711 T AT84108711 T AT 84108711T AT E46784 T1 ATE46784 T1 AT E46784T1
Authority
AT
Austria
Prior art keywords
wordline
rom
enhanced
fet cell
precharging
Prior art date
Application number
AT84108711T
Other languages
English (en)
Inventor
Daniel J Kouba
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE46784T1 publication Critical patent/ATE46784T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
AT84108711T 1983-09-20 1984-07-24 Festwertspeicher-fet-zelle mit vergroesserter bitleitungsvorladung durch eine wortleitung. ATE46784T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/534,035 US4725986A (en) 1983-09-20 1983-09-20 FET read only memory cell with word line augmented precharging of the bit lines
EP84108711A EP0135699B1 (de) 1983-09-20 1984-07-24 Festwertspeicher-FET-Zelle mit vergrösserter Bitleitungsvorladung durch eine Wortleitung

Publications (1)

Publication Number Publication Date
ATE46784T1 true ATE46784T1 (de) 1989-10-15

Family

ID=24128445

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84108711T ATE46784T1 (de) 1983-09-20 1984-07-24 Festwertspeicher-fet-zelle mit vergroesserter bitleitungsvorladung durch eine wortleitung.

Country Status (5)

Country Link
US (1) US4725986A (de)
EP (1) EP0135699B1 (de)
JP (1) JPS6077457A (de)
AT (1) ATE46784T1 (de)
DE (1) DE3479938D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808855A (en) * 1987-12-16 1989-02-28 Intel Corporation Distributed precharge wire-or bus
JPH0411394A (ja) * 1990-04-27 1992-01-16 Nec Corp 半導体装置
JP3071541B2 (ja) * 1992-02-19 2000-07-31 ローム株式会社 不揮発性メモリ
JP3107442B2 (ja) * 1992-02-19 2000-11-06 ローム株式会社 不揮発性メモリ、その使用方法及びその製造方法
US5471416A (en) * 1994-11-14 1995-11-28 National Semiconductor Corporation Method of programming a CMOS read only memory at the second metal layer in a two-metal process
US5999469A (en) * 1998-03-04 1999-12-07 Lsi Logic Corporation Sense time reduction using midlevel precharge
EP0945872B1 (de) * 1998-03-23 2006-05-31 Infineon Technologies AG Verfahren zur Programmierung einer Festwert-Speicherzellenanordnung
JP2002100196A (ja) 2000-09-26 2002-04-05 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase
FR2874734A1 (fr) * 2004-08-26 2006-03-03 St Microelectronics Sa Procede de lecture de cellules memoire programmables et effacables electriquement, a precharge anticipee de lignes de bit
FR2881565B1 (fr) * 2005-02-03 2007-08-24 Atmel Corp Circuits de selection de ligne binaire pour memoires non volatiles

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866186A (en) * 1972-05-16 1975-02-11 Tokyo Shibaura Electric Co Logic circuit arrangement employing insulated gate field effect transistors
JPS5713079B2 (de) * 1975-02-10 1982-03-15
US4006469A (en) * 1975-12-16 1977-02-01 International Business Machines Corporation Data storage cell with transistors operating at different threshold voltages
JPS5457921A (en) * 1977-10-18 1979-05-10 Fujitsu Ltd Sense amplifier circuit
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array
US4208727A (en) * 1978-06-15 1980-06-17 Texas Instruments Incorporated Semiconductor read only memory using MOS diodes
JPS5931155B2 (ja) * 1979-10-11 1984-07-31 インターナシヨナルビジネス マシーンズ コーポレーシヨン 感知増幅回路
US4413330A (en) * 1981-06-30 1983-11-01 International Business Machines Corporation Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array
US4389705A (en) * 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor

Also Published As

Publication number Publication date
DE3479938D1 (en) 1989-11-02
JPS6077457A (ja) 1985-05-02
US4725986A (en) 1988-02-16
EP0135699A2 (de) 1985-04-03
JPS6313279B2 (de) 1988-03-24
EP0135699B1 (de) 1989-09-27
EP0135699A3 (en) 1986-12-30

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Legal Events

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