DE3485734D1 - Halbleiterspeichergeraet. - Google Patents

Halbleiterspeichergeraet.

Info

Publication number
DE3485734D1
DE3485734D1 DE8484108240T DE3485734T DE3485734D1 DE 3485734 D1 DE3485734 D1 DE 3485734D1 DE 8484108240 T DE8484108240 T DE 8484108240T DE 3485734 T DE3485734 T DE 3485734T DE 3485734 D1 DE3485734 D1 DE 3485734D1
Authority
DE
Germany
Prior art keywords
memory cells
defective portions
storage device
semiconductor storage
defective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484108240T
Other languages
English (en)
Inventor
Mitsuo C O Patent Divisi Isobe
Takayasu C O Patent Di Sakurai
Kazuhiro C O Patent Div Sawada
Tetsuya C O Patent Divi Iizuka
Takayuki C O Patent Div Ohtani
Akira Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58126233A external-priority patent/JPS6018899A/ja
Priority claimed from JP58127770A external-priority patent/JPS6020397A/ja
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3485734D1 publication Critical patent/DE3485734D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
DE8484108240T 1983-07-13 1984-07-13 Halbleiterspeichergeraet. Expired - Lifetime DE3485734D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58126233A JPS6018899A (ja) 1983-07-13 1983-07-13 半導体メモリ
JP58127770A JPS6020397A (ja) 1983-07-15 1983-07-15 半導体メモリ

Publications (1)

Publication Number Publication Date
DE3485734D1 true DE3485734D1 (de) 1992-06-25

Family

ID=26462449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484108240T Expired - Lifetime DE3485734D1 (de) 1983-07-13 1984-07-13 Halbleiterspeichergeraet.

Country Status (3)

Country Link
US (1) US4587638A (de)
EP (1) EP0131930B1 (de)
DE (1) DE3485734D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829481A (en) * 1985-08-20 1989-05-09 Sgs-Thomson Microelectronics, Inc. Defective element disabling circuit having a laser-blown fuse
EP0213044A3 (de) * 1985-08-20 1989-03-22 STMicroelectronics, Inc. Schaltung zur Ausschaltung von fehlerhaften Elementen mit durch Laser durchgebrannter Sicherung
JPS63239696A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 冗長回路付メモリの試験装置
JPH01251397A (ja) * 1988-03-30 1989-10-06 Toshiba Corp 半導体メモリ装置
JPH0682807B2 (ja) * 1988-09-12 1994-10-19 株式会社東芝 半導体メモリ
US5471427A (en) * 1989-06-05 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Circuit for repairing defective bit in semiconductor memory device and repairing method
US5058070A (en) * 1990-02-12 1991-10-15 Motorola, Inc. High speed memory with row redundancy
GB9007796D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Dynamic memory row/column redundancy scheme
JPH043399A (ja) * 1990-04-19 1992-01-08 Sharp Corp 半導体記憶装置
JPH0461098A (ja) * 1990-06-29 1992-02-27 Nec Ic Microcomput Syst Ltd 半導体メモリ装置
KR960001307B1 (ko) * 1990-10-02 1996-01-25 가부시기가이샤 도오시바 메모리의 테스트방법
US5327381A (en) * 1992-06-03 1994-07-05 Mips Computer Systems, Inc. Redundancy selection apparatus and method for an array
JP2980472B2 (ja) * 1992-12-21 1999-11-22 株式会社東芝 半導体記憶装置
US5465233A (en) * 1993-05-28 1995-11-07 Sgs-Thomson Microelectronics, Inc. Structure for deselecting broken select lines in memory arrays
KR0157339B1 (ko) * 1995-06-28 1998-12-01 김광호 반도체 메모리의 불량셀 구제회로
EP0953983A3 (de) * 1996-03-01 2005-10-05 Mitsubishi Denki Kabushiki Kaisha Halbleiterspeichergerät mit Klemmschaltung zur Fehlfunktionsvermeidung
JP2002110806A (ja) * 2000-09-29 2002-04-12 Rohm Co Ltd Ｉｃチップおよび半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940740A (en) * 1973-06-27 1976-02-24 Actron Industries, Inc. Method for providing reconfigurable microelectronic circuit devices and products produced thereby
US4056811A (en) * 1976-02-13 1977-11-01 Baker Roger T Circuit for the improvement of semiconductor memories
US4250570B1 (en) * 1976-07-15 1996-01-02 Intel Corp Redundant memory circuit
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
JPS57150197A (en) * 1981-03-11 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Storage circuit

Also Published As

Publication number Publication date
EP0131930B1 (de) 1992-05-20
US4587638A (en) 1986-05-06
EP0131930A2 (de) 1985-01-23
EP0131930A3 (en) 1987-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T

8339 Ceased/non-payment of the annual fee