DE3570804D1 - A bipolar hetero-junction transistor and method of producing the same - Google Patents

A bipolar hetero-junction transistor and method of producing the same

Info

Publication number
DE3570804D1
DE3570804D1 DE8585201504T DE3570804T DE3570804D1 DE 3570804 D1 DE3570804 D1 DE 3570804D1 DE 8585201504 T DE8585201504 T DE 8585201504T DE 3570804 T DE3570804 T DE 3570804T DE 3570804 D1 DE3570804 D1 DE 3570804D1
Authority
DE
Germany
Prior art keywords
producing
same
junction transistor
bipolar hetero
hetero
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585201504T
Other languages
German (de)
English (en)
Inventor
Moustafa Yehia Ghannam
Robert Mertens
Johan Nijs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL8403005A external-priority patent/NL8403005A/nl
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Application granted granted Critical
Publication of DE3570804D1 publication Critical patent/DE3570804D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7375—Vertical transistors having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
DE8585201504T 1984-10-02 1985-09-19 A bipolar hetero-junction transistor and method of producing the same Expired DE3570804D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8403005A NL8403005A (nl) 1984-10-02 1984-10-02 Werkwijze voor het vervaardigen van een bipolaire heterojunctietransistor en bipolaire heterojunctie-transistor vervaardigd volgens de werkwijze.
NL8501769A NL8501769A (nl) 1984-10-02 1985-06-19 Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
DE3570804D1 true DE3570804D1 (en) 1989-07-06

Family

ID=26645985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585201504T Expired DE3570804D1 (en) 1984-10-02 1985-09-19 A bipolar hetero-junction transistor and method of producing the same

Country Status (7)

Country Link
US (1) US5108936A (nl)
EP (1) EP0178004B1 (nl)
KR (1) KR890004471B1 (nl)
CN (1) CN1003831B (nl)
CA (1) CA1242035A (nl)
DE (1) DE3570804D1 (nl)
NL (1) NL8501769A (nl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
JPS63285972A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd バイポ−ラトランジスタおよびその製造方法
EP0429885B1 (en) * 1989-12-01 1997-06-04 Texas Instruments Incorporated Method of in-situ doping of deposited silicon
ZA923086B (en) * 1991-04-29 1993-10-28 South African Medical Research A delivery system for biologicaly active growth or morphogenetic factors and a method for preparing such delivery system
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
DE4345229C2 (de) * 1993-09-30 1998-04-09 Reinhard Dr Schwarz Verfahren zum Herstellen von lumineszenten Elementstrukturen und Elementstrukturen
DE4333416C2 (de) * 1993-09-30 1996-05-09 Reinhard Dr Schwarz Verfahren zur Herstellung von mikrokristallinen Schichten und deren Verwendung
JP4870873B2 (ja) * 2001-03-08 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8486797B1 (en) 2012-05-25 2013-07-16 International Business Machines Corporation Bipolar junction transistor with epitaxial contacts
US9356114B2 (en) 2013-10-01 2016-05-31 Globalfoundries Inc. Lateral heterojunction bipolar transistor with low temperature recessed contacts

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
FR2352404A1 (fr) * 1976-05-20 1977-12-16 Comp Generale Electricite Transistor a heterojonction
US4127861A (en) * 1977-09-26 1978-11-28 International Business Machines Corporation Metal base transistor with thin film amorphous semiconductors
US4193821A (en) * 1978-08-14 1980-03-18 Exxon Research & Engineering Co. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer
US4227942A (en) * 1979-04-23 1980-10-14 General Electric Company Photovoltaic semiconductor devices and methods of making same
JPS5760872A (en) * 1980-09-30 1982-04-13 Nippon Telegr & Teleph Corp <Ntt> Vertical-type semiconductor device
JPS5842126B2 (ja) * 1980-10-31 1983-09-17 鐘淵化学工業株式会社 アモルファスシリコンの製造方法
JPS5790933A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of amorphous semiconductor film
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
JPS5933532B2 (ja) * 1981-04-03 1984-08-16 スタンレー電気株式会社 非晶質シリコンの形成方法
JPS6041453B2 (ja) * 1981-05-15 1985-09-17 工業技術院長 微結晶化非晶質シリコン膜の生成方法
DE3314197A1 (de) * 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
JPS5996722A (ja) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol 薄膜半導体装置
JPS59106153A (ja) * 1982-12-10 1984-06-19 Hitachi Ltd シリコントランジスタの製造方法
US4604636A (en) * 1983-05-11 1986-08-05 Chronar Corp. Microcrystalline semiconductor method and devices
US4451538A (en) * 1983-05-13 1984-05-29 Atlantic Richfield Company High hydrogen amorphous silicon
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
JPS59211265A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
JPS59211266A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ

Also Published As

Publication number Publication date
CN85108634A (zh) 1986-07-30
NL8501769A (nl) 1986-05-01
US5108936A (en) 1992-04-28
EP0178004B1 (en) 1989-05-31
CN1003831B (zh) 1989-04-05
KR860003672A (ko) 1986-05-28
EP0178004A1 (en) 1986-04-16
KR890004471B1 (ko) 1989-11-04
CA1242035A (en) 1988-09-13

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Legal Events

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8339 Ceased/non-payment of the annual fee