DE3516567C2 - - Google Patents
Info
- Publication number
- DE3516567C2 DE3516567C2 DE3516567A DE3516567A DE3516567C2 DE 3516567 C2 DE3516567 C2 DE 3516567C2 DE 3516567 A DE3516567 A DE 3516567A DE 3516567 A DE3516567 A DE 3516567A DE 3516567 C2 DE3516567 C2 DE 3516567C2
- Authority
- DE
- Germany
- Prior art keywords
- container
- heating zone
- containers
- reaction
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000009423 ventilation Methods 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 150000003377 silicon compounds Chemical class 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000013022 venting Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 38
- 239000007789 gas Substances 0.000 description 27
- 239000008187 granular material Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000008188 pellet Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 2
- 229930006000 Sucrose Natural products 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000005720 sucrose Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 101100293261 Mus musculus Naa15 gene Proteins 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59091061A JPS60235706A (ja) | 1984-05-09 | 1984-05-09 | シリコン系セラミツクス粉末の連続製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3516567A1 DE3516567A1 (de) | 1985-11-28 |
| DE3516567C2 true DE3516567C2 (Direct) | 1989-04-06 |
Family
ID=14015983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853516567 Granted DE3516567A1 (de) | 1984-05-09 | 1985-05-08 | Verfahren zur kontinuierlichen herstellung eines als keramikmaterial verwendbaren pulvers einer siliziumverbindung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4610864A (Direct) |
| JP (1) | JPS60235706A (Direct) |
| DE (1) | DE3516567A1 (Direct) |
| FR (1) | FR2564083B1 (Direct) |
| GB (1) | GB2160186B (Direct) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006055469A1 (de) * | 2006-11-23 | 2008-05-29 | Universität Paderborn | Verfahren zur Herstellung eines Gegenstandes zumindest teilweise mit Siliziumkarbidgefüge aus einem Rohling aus einem kohlenstoffhaltigen Material |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0638911B2 (ja) * | 1986-03-08 | 1994-05-25 | 日本セメント株式会社 | 非酸化物粉末の製造方法 |
| JPS6317209A (ja) * | 1986-07-08 | 1988-01-25 | Mitsubishi Gas Chem Co Inc | Ｃｖｄ法による非晶質微粉末の製造法 |
| JP2579760B2 (ja) * | 1987-03-03 | 1997-02-12 | 住友化学工業株式会社 | 反応炉 |
| RU2156220C1 (ru) * | 1999-05-26 | 2000-09-20 | Карелин Александр Иванович | Способ получения раствора металлического кремния, способ получения металлического кремния из раствора и металлический кремний, полученный на основе этих способов, способ получения керамических материалов и керамический материал, полученный на основе этого способа |
| DE102008064642A1 (de) * | 2008-09-30 | 2010-04-01 | Evonik Degussa Gmbh | Zusammensetzung oder Kit für ein Verfahren zur Herstellung von hochreinem Siliciumcarbid aus Kohlenhydraten und Siliciumoxid sowie darauf basierende Artikel |
| CN102781562B (zh) * | 2009-12-24 | 2014-11-19 | Lg伊诺特有限公司 | 用于真空热处理设备的热处理容器 |
| EP3481543A4 (en) * | 2016-07-08 | 2019-12-18 | Alcoa USA Corp. | SYSTEMS AND METHODS FOR PRODUCING CERAMIC POWDERS |
| US20240416308A1 (en) * | 2021-10-14 | 2024-12-19 | H. C. Starck Tungsten GmbH | Device Comprising a Reaction Container for Solids Reactions |
| CN117663781B (zh) * | 2023-12-07 | 2024-11-01 | 宁夏金海兴昇碳化硅有限公司 | 一种可提高碳化硅一级品率的冶炼炉的装炉方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2072728A5 (Direct) * | 1969-12-22 | 1971-09-24 | Belousov Afanasy | |
| US3658310A (en) * | 1970-03-04 | 1972-04-25 | Atomic Energy Authority Uk | Furnaces |
| NO137856C (no) * | 1973-04-24 | 1978-05-10 | Shinano Electric Refining Co L | Fremgangsmaate for fremstilling av silisiumkarbid |
| CA1084235A (en) * | 1976-05-24 | 1980-08-26 | Ryo Enomoto | PROCESS AND AN APPARATUS FOR PRODUCING SILICON CARBIDE CONSISTING MAINLY OF .beta.-TYPE CRYSTAL |
| JPS5684310A (en) * | 1979-12-14 | 1981-07-09 | Hiroshige Suzuki | Manufacture of betaatype silicon carbide |
| EP0044867B2 (en) * | 1980-02-08 | 1991-11-27 | Superior Graphite Co. | Methods for the continuous production of silicon carbide |
| JPS56137071A (en) * | 1980-03-08 | 1981-10-26 | Shelley Donald Percy | Kiln |
| JPS6052119B2 (ja) * | 1982-04-01 | 1985-11-18 | タテホ化学工業株式会社 | 窒化珪素ウイスカ−の製造方法 |
| SE449221B (sv) * | 1983-04-19 | 1987-04-13 | Kemanord Ind Ab | Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc |
| GB2147891A (en) * | 1983-10-12 | 1985-05-22 | Us Energy | Preparation of silicon carbide fibers |
-
1984
- 1984-05-09 JP JP59091061A patent/JPS60235706A/ja active Granted
-
1985
- 1985-05-02 US US06/729,740 patent/US4610864A/en not_active Expired - Lifetime
- 1985-05-07 FR FR8506947A patent/FR2564083B1/fr not_active Expired - Fee Related
- 1985-05-08 GB GB08511636A patent/GB2160186B/en not_active Expired
- 1985-05-08 DE DE19853516567 patent/DE3516567A1/de active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006055469A1 (de) * | 2006-11-23 | 2008-05-29 | Universität Paderborn | Verfahren zur Herstellung eines Gegenstandes zumindest teilweise mit Siliziumkarbidgefüge aus einem Rohling aus einem kohlenstoffhaltigen Material |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8511636D0 (en) | 1985-06-12 |
| JPS60235706A (ja) | 1985-11-22 |
| FR2564083B1 (fr) | 1990-06-15 |
| FR2564083A1 (fr) | 1985-11-15 |
| GB2160186B (en) | 1987-12-16 |
| GB2160186A (en) | 1985-12-18 |
| DE3516567A1 (de) | 1985-11-28 |
| JPS6335565B2 (Direct) | 1988-07-15 |
| US4610864A (en) | 1986-09-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8125 | Change of the main classification |
Ipc: C01B 31/36 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |