DE3443784A1 - Gate-abschaltthyristor - Google Patents

Gate-abschaltthyristor

Info

Publication number
DE3443784A1
DE3443784A1 DE19843443784 DE3443784A DE3443784A1 DE 3443784 A1 DE3443784 A1 DE 3443784A1 DE 19843443784 DE19843443784 DE 19843443784 DE 3443784 A DE3443784 A DE 3443784A DE 3443784 A1 DE3443784 A1 DE 3443784A1
Authority
DE
Germany
Prior art keywords
thyristor
metallized
gate turn
base layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843443784
Other languages
German (de)
English (en)
Other versions
DE3443784C2 (enrdf_load_stackoverflow
Inventor
Kozo Itami Hyogo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3443784A1 publication Critical patent/DE3443784A1/de
Application granted granted Critical
Publication of DE3443784C2 publication Critical patent/DE3443784C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
DE19843443784 1983-11-30 1984-11-30 Gate-abschaltthyristor Granted DE3443784A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58228043A JPS60119777A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
DE3443784A1 true DE3443784A1 (de) 1985-07-18
DE3443784C2 DE3443784C2 (enrdf_load_stackoverflow) 1991-10-10

Family

ID=16870300

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19843443784 Granted DE3443784A1 (de) 1983-11-30 1984-11-30 Gate-abschaltthyristor
DE19843448379 Expired - Fee Related DE3448379C2 (de) 1983-11-30 1984-11-30 Gate-Abschaltthyristor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19843448379 Expired - Fee Related DE3448379C2 (de) 1983-11-30 1984-11-30 Gate-Abschaltthyristor

Country Status (3)

Country Link
JP (1) JPS60119777A (enrdf_load_stackoverflow)
DE (2) DE3443784A1 (enrdf_load_stackoverflow)
GB (1) GB2150754B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004048688B4 (de) * 2004-01-14 2013-05-08 Mitsubishi Denki K.K. Leistungs-Halbleitervorrichtung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5396436B2 (ja) * 2011-06-29 2014-01-22 日立オートモティブシステムズ株式会社 半導体装置ならびに半導体装置の製造方法
US9583425B2 (en) * 2012-02-15 2017-02-28 Maxim Integrated Products, Inc. Solder fatigue arrest for wafer level package

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105526B (de) * 1959-12-29 1961-04-27 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1214978B (de) * 1963-06-11 1966-04-21 Licentia Gmbh Verfahren zum Anloeten einer Goldfolie an eine vernickelte Molybdaenscheibe
GB1149606A (en) * 1967-02-27 1969-04-23 Motorola Inc Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
US3633076A (en) * 1966-03-19 1972-01-04 Siemens Ag Three layer metallic contact strip at a semiconductor structural component
DE2009863B2 (de) * 1970-03-03 1977-05-05 Licentia Pate nt-Verwaltungs-GmbH, 6000 Frankfurt Nichtsperrender kontakt aus mehreren schichten fuer silizium- halbleiterbauelemente
DE2809863A1 (de) * 1977-03-08 1978-09-14 Ates Componenti Elettron Verfahren zum herstellen von halbleiterbauelementen
DE2712533A1 (de) * 1977-03-15 1978-12-14 Meidensha Electric Mfg Co Ltd Mittels einer steuerelektrode gesteuertes halbleiterbauelement, insbesondere thyristor
GB1557399A (en) * 1976-04-09 1979-12-12 Int Rectifier Corp Gate controlled semiconductor device
DE3200807A1 (de) * 1981-01-14 1982-10-14 Hitachi, Ltd., Tokyo Leistungshalbleiteranordnung
GB2104290A (en) * 1981-08-18 1983-03-02 Tokyo Shibaura Electric Co Semiconductor device and method for manufacturing the same
DE3346833A1 (de) * 1982-12-28 1984-07-05 Tokyo Shibaura Denki K.K., Kawasaki Halbleiterelement
EP0121605A2 (de) * 1983-01-20 1984-10-17 BROWN, BOVERI & CIE Aktiengesellschaft Verfahren zur Herstellung einer mehrschichtigen Kontaktmetallisierung auf einem Silizium-Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1196834A (en) * 1967-03-29 1970-07-01 Hitachi Ltd Improvement of Electrode Structure in a Semiconductor Device.
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105526B (de) * 1959-12-29 1961-04-27 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1214978B (de) * 1963-06-11 1966-04-21 Licentia Gmbh Verfahren zum Anloeten einer Goldfolie an eine vernickelte Molybdaenscheibe
US3633076A (en) * 1966-03-19 1972-01-04 Siemens Ag Three layer metallic contact strip at a semiconductor structural component
GB1149606A (en) * 1967-02-27 1969-04-23 Motorola Inc Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
DE2009863B2 (de) * 1970-03-03 1977-05-05 Licentia Pate nt-Verwaltungs-GmbH, 6000 Frankfurt Nichtsperrender kontakt aus mehreren schichten fuer silizium- halbleiterbauelemente
GB1557399A (en) * 1976-04-09 1979-12-12 Int Rectifier Corp Gate controlled semiconductor device
DE2809863A1 (de) * 1977-03-08 1978-09-14 Ates Componenti Elettron Verfahren zum herstellen von halbleiterbauelementen
DE2712533A1 (de) * 1977-03-15 1978-12-14 Meidensha Electric Mfg Co Ltd Mittels einer steuerelektrode gesteuertes halbleiterbauelement, insbesondere thyristor
DE3200807A1 (de) * 1981-01-14 1982-10-14 Hitachi, Ltd., Tokyo Leistungshalbleiteranordnung
GB2104290A (en) * 1981-08-18 1983-03-02 Tokyo Shibaura Electric Co Semiconductor device and method for manufacturing the same
DE3346833A1 (de) * 1982-12-28 1984-07-05 Tokyo Shibaura Denki K.K., Kawasaki Halbleiterelement
EP0121605A2 (de) * 1983-01-20 1984-10-17 BROWN, BOVERI & CIE Aktiengesellschaft Verfahren zur Herstellung einer mehrschichtigen Kontaktmetallisierung auf einem Silizium-Halbleiterbauelement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004048688B4 (de) * 2004-01-14 2013-05-08 Mitsubishi Denki K.K. Leistungs-Halbleitervorrichtung

Also Published As

Publication number Publication date
DE3443784C2 (enrdf_load_stackoverflow) 1991-10-10
GB2150754A (en) 1985-07-03
GB2150754B (en) 1987-08-26
DE3448379C2 (de) 1993-12-16
JPS60119777A (ja) 1985-06-27
GB8430310D0 (en) 1985-01-09

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