DE3441044C2 - - Google Patents

Info

Publication number
DE3441044C2
DE3441044C2 DE3441044A DE3441044A DE3441044C2 DE 3441044 C2 DE3441044 C2 DE 3441044C2 DE 3441044 A DE3441044 A DE 3441044A DE 3441044 A DE3441044 A DE 3441044A DE 3441044 C2 DE3441044 C2 DE 3441044C2
Authority
DE
Germany
Prior art keywords
layer
decomposition
sih3
containing gas
thermally induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3441044A
Other languages
German (de)
English (en)
Other versions
DE3441044A1 (de
Inventor
Gerhard Dr. 7037 Magstadt De Winterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOTAL ENERGIE DEVELOPPEMENT + MESSERSCHMITT-BOELKO
Original Assignee
Total Energie Developpement and Messerschmitt-Boelkow-Blohm & Co Phototronics Ohg 8011 Putzbrunn De GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Total Energie Developpement and Messerschmitt-Boelkow-Blohm & Co Phototronics Ohg 8011 Putzbrunn De GmbH filed Critical Total Energie Developpement and Messerschmitt-Boelkow-Blohm & Co Phototronics Ohg 8011 Putzbrunn De GmbH
Priority to DE19843441044 priority Critical patent/DE3441044A1/de
Priority to FR858516518A priority patent/FR2573249B1/fr
Publication of DE3441044A1 publication Critical patent/DE3441044A1/de
Application granted granted Critical
Publication of DE3441044C2 publication Critical patent/DE3441044C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10P14/24—
    • H10P14/2905—
    • H10P14/2923—
    • H10P14/3208—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
DE19843441044 1984-11-09 1984-11-09 Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen Granted DE3441044A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19843441044 DE3441044A1 (de) 1984-11-09 1984-11-09 Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen
FR858516518A FR2573249B1 (fr) 1984-11-09 1985-11-07 Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843441044 DE3441044A1 (de) 1984-11-09 1984-11-09 Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen

Publications (2)

Publication Number Publication Date
DE3441044A1 DE3441044A1 (de) 1986-05-22
DE3441044C2 true DE3441044C2 (OSRAM) 1991-04-25

Family

ID=6249942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843441044 Granted DE3441044A1 (de) 1984-11-09 1984-11-09 Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen

Country Status (2)

Country Link
DE (1) DE3441044A1 (OSRAM)
FR (1) FR2573249B1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004061360A1 (de) * 2004-12-21 2006-07-13 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
US5155051A (en) * 1990-06-22 1992-10-13 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
TW516100B (en) * 2000-03-23 2003-01-01 Matsushita Electric Industrial Co Ltd Method for producing semiconductor crystal
CN100334744C (zh) * 2005-04-21 2007-08-29 中电电气（南京）光伏有限公司 一种硅太阳电池的结构与制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4459163A (en) * 1981-03-11 1984-07-10 Chronar Corporation Amorphous semiconductor method
WO1982003069A1 (en) * 1981-03-11 1982-09-16 Macdiarmid Alan G Amorphous semiconductor method and devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004061360A1 (de) * 2004-12-21 2006-07-13 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge

Also Published As

Publication number Publication date
FR2573249B1 (fr) 1991-11-08
DE3441044A1 (de) 1986-05-22
FR2573249A1 (fr) 1986-05-16

Similar Documents

Publication Publication Date Title
DE3280418T2 (de) Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.
DE69926960T2 (de) Verfahren zur Herstellung einer photovoltaischen Vorrichtung
DE2743141C2 (de) Halbleiterbauelement mit einer Schicht aus amorphem Silizium
DE3105819C2 (OSRAM)
DE4408791B4 (de) Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms
DE3048857A1 (de) Verfahren zum herstellen von amorphem silicium und nach diesem verfahren hergestellte vorrichtung
DE2711365C2 (OSRAM)
WO2010025809A2 (de) Heterosolarzelle und verfahren zur herstellung von heterosolarzellen
DE2422138A1 (de) Verfahren zur herstellung von elektroden aus halbleitermaterial
DE3732619C2 (OSRAM)
DE2752439A1 (de) Verfahren zur herstellung von silicium-halbleiteranordnungen unter einsatz einer ionenimplantation und zugehoerige halbleiteranordnung
DE4337889B4 (de) Verfahren zum Herstellen eines Kondensators in einer Halbleiterspeichervorrichtung
DE69431535T2 (de) Verfahren zur Herstellung von einer Chalcopyrit-Halbleiterdünnschichtstruktur mit einem spezifischen Dotiermaterial
DE4415601A1 (de) Komposit-Struktur für elektronische Bauteile und Verfahren zu deren Herstellung
DE1544190C3 (de) Verfahren zum Einführen von Störstellen in Diamant
DE69525558T2 (de) Methode zur Herstellung eines Dünnfilm-Transistors mit invertierter Struktur
EP1601813B1 (de) Verfahren zur abscheidung von silizium
DE3441044C2 (OSRAM)
DE4313042A1 (de) Diamantschichten mit hitzebeständigen Ohmschen Elektroden und Herstellungsverfahren dafür
DE102020001980A1 (de) Verfahren und Anlage zur Herstellung eines Ausgangsmaterials für eine Siliziumsolarzelle mit passivierten Kontakten
DE2154386C3 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
DE4101110C2 (de) Verfahren zur Herstellung eines photoleitenden Materials und Verwendung desselben
DE3880109T2 (de) Sonnenzelle fuer niedrigen lichtpegel.
DE69223338T2 (de) Verfahren zur Diffundierung von Bor in Halbleiterplättchen
DE3520626C2 (OSRAM)

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: TOTAL ENERGIE DEVELOPPEMENT + MESSERSCHMITT-BOELKO

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee