DE3428255C2 - Verfahren zur Zerkleinerung von stab- und barrenförmigem, polykristallinem Halbleiter-Silizium - Google Patents

Verfahren zur Zerkleinerung von stab- und barrenförmigem, polykristallinem Halbleiter-Silizium

Info

Publication number
DE3428255C2
DE3428255C2 DE3428255A DE3428255A DE3428255C2 DE 3428255 C2 DE3428255 C2 DE 3428255C2 DE 3428255 A DE3428255 A DE 3428255A DE 3428255 A DE3428255 A DE 3428255A DE 3428255 C2 DE3428255 C2 DE 3428255C2
Authority
DE
Germany
Prior art keywords
shaped
rod
silicon
microwaves
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3428255A
Other languages
German (de)
English (en)
Other versions
DE3428255A1 (de
Inventor
Meiseki Ebetsu Hokkaido Katayama
Yoshifumi Fujisawa Kanagawa Yatsurugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Publication of DE3428255A1 publication Critical patent/DE3428255A1/de
Application granted granted Critical
Publication of DE3428255C2 publication Critical patent/DE3428255C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3428255A 1983-08-02 1984-07-31 Verfahren zur Zerkleinerung von stab- und barrenförmigem, polykristallinem Halbleiter-Silizium Expired DE3428255C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58140589A JPS6033210A (ja) 1983-08-02 1983-08-02 半導体用シリコンの破砕方法

Publications (2)

Publication Number Publication Date
DE3428255A1 DE3428255A1 (de) 1985-02-21
DE3428255C2 true DE3428255C2 (de) 1986-09-18

Family

ID=15272197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3428255A Expired DE3428255C2 (de) 1983-08-02 1984-07-31 Verfahren zur Zerkleinerung von stab- und barrenförmigem, polykristallinem Halbleiter-Silizium

Country Status (3)

Country Link
US (1) US4565913A (en, 2012)
JP (1) JPS6033210A (en, 2012)
DE (1) DE3428255C2 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19818518C2 (de) * 1997-08-25 2003-03-06 Mitsubishi Electric Corp Halbleitervorrichtung und Verfahren zu deren Herstellung
DE10009569C2 (de) * 2000-02-29 2003-03-27 Schott Glas Verfahren und Vorrichtung zum Zerkleinern von Glaskörpern mittels Mikrowellenerwärmung

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61197493A (ja) * 1985-02-26 1986-09-01 Kyozo Kaneko 金属酸化物の結晶化方法
JPS63287565A (ja) * 1987-05-19 1988-11-24 小松電子金属株式会社 半導体用シリコンの破砕方法
KR940007093B1 (ko) * 1988-02-18 1994-08-05 어드밴스드 실리콘 머티리얼스, 인코포레이션 실리콘막대로부터 소정 크기의 입자를 형성하는 방법
DE3811091A1 (de) * 1988-03-31 1989-10-12 Heliotronic Gmbh Verfahren zum kontaminationsarmen zerkleinern von massivem stueckigem silicium
FR2671546B1 (fr) * 1991-01-11 1993-03-12 Pechiney Electrometallurgie Poudre de silicium metallurgique a faible oxydation superficielle.
DE4218283A1 (de) * 1992-05-27 1993-12-02 Wacker Chemitronic Verfahren zum kontaminationsfreien Zerkleinern von Halbleitermaterial, insbesondere Silicium
JP3285054B2 (ja) * 1993-08-26 2002-05-27 三菱マテリアルポリシリコン株式会社 多結晶シリコンの破砕方法
US5556791A (en) * 1995-01-03 1996-09-17 Texas Instruments Incorporated Method of making optically fused semiconductor powder for solar cells
US5810934A (en) 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
DE10059594A1 (de) * 2000-11-30 2002-06-06 Solarworld Ag Verfahren und Vorrichtung zur Erzeugung globulärer Körner aus Reinst-Silizium mit Durchmessern von 50 mum bis 300 mum und ihre Verwendung
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
JP4340963B2 (ja) * 2003-10-01 2009-10-07 株式会社 アイアイエスマテリアル スクラップシリコン塊の破砕方法
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
KR100948118B1 (ko) * 2009-01-28 2010-03-18 (주)신일판넬 건축물 마감 패널의 연결구조
US8490901B2 (en) 2009-07-28 2013-07-23 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
CN102489372B (zh) * 2011-12-12 2013-09-04 湖南顶立科技有限公司 多晶硅棒破碎方法及设备
CN103806097B (zh) * 2012-11-12 2017-08-08 松下知识产权经营株式会社 硅循环再利用系统及其方法
CN106113291A (zh) * 2016-06-27 2016-11-16 哈尔滨工业大学 一种微波切割装置
CN107523884A (zh) * 2017-10-20 2017-12-29 河北宁通电子材料有限公司 一种微波爆料机
CN110182810A (zh) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 基于工业微波加热破碎硅料的连续生产工艺及装置
CN111530591B (zh) * 2020-05-09 2021-05-25 东北大学 一种重力式双管可控矿石厚度的微波助磨装置及使用方法
CN114345511A (zh) * 2022-02-14 2022-04-15 江苏鑫华半导体材料科技有限公司 电子级多晶硅棒热破碎方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275787A (en) * 1963-12-30 1966-09-27 Gen Electric Process and apparatus for producing particles by electron melting and ultrasonic agitation
US3430021A (en) * 1965-05-05 1969-02-25 Public Building & Works Uk Methods of cracking structures and apparatus for cracking structures
DE1286485B (de) * 1965-07-23 1969-01-09 Krupp Gmbh Vorrichtung zum thermischen Zerkleinern von Gestein und Erz im elektromagnetischen Strahlungsfeld
US3923653A (en) * 1972-09-27 1975-12-02 American Induction Heating Method for cleaning metallic filters of plastic waste
US4056118A (en) * 1975-09-17 1977-11-01 Eaton Corporation Syphon tube and vent valve assembly
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
CA1081796A (en) * 1978-02-09 1980-07-15 B. Alejandro Mackay Controlled heating microwave ovens using different operating frequencies
US4314128A (en) * 1980-01-28 1982-02-02 Photowatt International, Inc. Silicon growth technique and apparatus using controlled microwave heating
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS-ERMITTELT

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19818518C2 (de) * 1997-08-25 2003-03-06 Mitsubishi Electric Corp Halbleitervorrichtung und Verfahren zu deren Herstellung
DE10009569C2 (de) * 2000-02-29 2003-03-27 Schott Glas Verfahren und Vorrichtung zum Zerkleinern von Glaskörpern mittels Mikrowellenerwärmung

Also Published As

Publication number Publication date
JPS6033210A (ja) 1985-02-20
US4565913A (en) 1986-01-21
DE3428255A1 (de) 1985-02-21
JPS6243925B2 (en, 2012) 1987-09-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: POPP, E., DIPL.-ING.DIPL.-WIRTSCH.-ING.DR.RER.POL.

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee