JPS6243925B2 - - Google Patents

Info

Publication number
JPS6243925B2
JPS6243925B2 JP58140589A JP14058983A JPS6243925B2 JP S6243925 B2 JPS6243925 B2 JP S6243925B2 JP 58140589 A JP58140589 A JP 58140589A JP 14058983 A JP14058983 A JP 14058983A JP S6243925 B2 JPS6243925 B2 JP S6243925B2
Authority
JP
Japan
Prior art keywords
silicon
crushing
rod
microwave
crushed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58140589A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6033210A (ja
Inventor
Yoshifumi Yatsurugi
Akashi Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP58140589A priority Critical patent/JPS6033210A/ja
Priority to US06/630,118 priority patent/US4565913A/en
Priority to DE3428255A priority patent/DE3428255C2/de
Publication of JPS6033210A publication Critical patent/JPS6033210A/ja
Publication of JPS6243925B2 publication Critical patent/JPS6243925B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58140589A 1983-08-02 1983-08-02 半導体用シリコンの破砕方法 Granted JPS6033210A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58140589A JPS6033210A (ja) 1983-08-02 1983-08-02 半導体用シリコンの破砕方法
US06/630,118 US4565913A (en) 1983-08-02 1984-07-12 Method for the disintegration of silicon for semiconductor
DE3428255A DE3428255C2 (de) 1983-08-02 1984-07-31 Verfahren zur Zerkleinerung von stab- und barrenförmigem, polykristallinem Halbleiter-Silizium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58140589A JPS6033210A (ja) 1983-08-02 1983-08-02 半導体用シリコンの破砕方法

Publications (2)

Publication Number Publication Date
JPS6033210A JPS6033210A (ja) 1985-02-20
JPS6243925B2 true JPS6243925B2 (en, 2012) 1987-09-17

Family

ID=15272197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58140589A Granted JPS6033210A (ja) 1983-08-02 1983-08-02 半導体用シリコンの破砕方法

Country Status (3)

Country Link
US (1) US4565913A (en, 2012)
JP (1) JPS6033210A (en, 2012)
DE (1) DE3428255C2 (en, 2012)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61197493A (ja) * 1985-02-26 1986-09-01 Kyozo Kaneko 金属酸化物の結晶化方法
JPS63287565A (ja) * 1987-05-19 1988-11-24 小松電子金属株式会社 半導体用シリコンの破砕方法
KR940007093B1 (ko) * 1988-02-18 1994-08-05 어드밴스드 실리콘 머티리얼스, 인코포레이션 실리콘막대로부터 소정 크기의 입자를 형성하는 방법
DE3811091A1 (de) * 1988-03-31 1989-10-12 Heliotronic Gmbh Verfahren zum kontaminationsarmen zerkleinern von massivem stueckigem silicium
FR2671546B1 (fr) * 1991-01-11 1993-03-12 Pechiney Electrometallurgie Poudre de silicium metallurgique a faible oxydation superficielle.
DE4218283A1 (de) * 1992-05-27 1993-12-02 Wacker Chemitronic Verfahren zum kontaminationsfreien Zerkleinern von Halbleitermaterial, insbesondere Silicium
JP3285054B2 (ja) * 1993-08-26 2002-05-27 三菱マテリアルポリシリコン株式会社 多結晶シリコンの破砕方法
US5556791A (en) * 1995-01-03 1996-09-17 Texas Instruments Incorporated Method of making optically fused semiconductor powder for solar cells
US5810934A (en) 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
JPH1167786A (ja) * 1997-08-25 1999-03-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE10009569C2 (de) * 2000-02-29 2003-03-27 Schott Glas Verfahren und Vorrichtung zum Zerkleinern von Glaskörpern mittels Mikrowellenerwärmung
DE10059594A1 (de) * 2000-11-30 2002-06-06 Solarworld Ag Verfahren und Vorrichtung zur Erzeugung globulärer Körner aus Reinst-Silizium mit Durchmessern von 50 mum bis 300 mum und ihre Verwendung
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
JP4340963B2 (ja) * 2003-10-01 2009-10-07 株式会社 アイアイエスマテリアル スクラップシリコン塊の破砕方法
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
KR100948118B1 (ko) * 2009-01-28 2010-03-18 (주)신일판넬 건축물 마감 패널의 연결구조
US8490901B2 (en) 2009-07-28 2013-07-23 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
CN102489372B (zh) * 2011-12-12 2013-09-04 湖南顶立科技有限公司 多晶硅棒破碎方法及设备
CN103806097B (zh) * 2012-11-12 2017-08-08 松下知识产权经营株式会社 硅循环再利用系统及其方法
CN106113291A (zh) * 2016-06-27 2016-11-16 哈尔滨工业大学 一种微波切割装置
CN107523884A (zh) * 2017-10-20 2017-12-29 河北宁通电子材料有限公司 一种微波爆料机
CN110182810A (zh) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 基于工业微波加热破碎硅料的连续生产工艺及装置
CN111530591B (zh) * 2020-05-09 2021-05-25 东北大学 一种重力式双管可控矿石厚度的微波助磨装置及使用方法
CN114345511A (zh) * 2022-02-14 2022-04-15 江苏鑫华半导体材料科技有限公司 电子级多晶硅棒热破碎方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275787A (en) * 1963-12-30 1966-09-27 Gen Electric Process and apparatus for producing particles by electron melting and ultrasonic agitation
US3430021A (en) * 1965-05-05 1969-02-25 Public Building & Works Uk Methods of cracking structures and apparatus for cracking structures
DE1286485B (de) * 1965-07-23 1969-01-09 Krupp Gmbh Vorrichtung zum thermischen Zerkleinern von Gestein und Erz im elektromagnetischen Strahlungsfeld
US3923653A (en) * 1972-09-27 1975-12-02 American Induction Heating Method for cleaning metallic filters of plastic waste
US4056118A (en) * 1975-09-17 1977-11-01 Eaton Corporation Syphon tube and vent valve assembly
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
CA1081796A (en) * 1978-02-09 1980-07-15 B. Alejandro Mackay Controlled heating microwave ovens using different operating frequencies
US4314128A (en) * 1980-01-28 1982-02-02 Photowatt International, Inc. Silicon growth technique and apparatus using controlled microwave heating
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs

Also Published As

Publication number Publication date
JPS6033210A (ja) 1985-02-20
DE3428255C2 (de) 1986-09-18
US4565913A (en) 1986-01-21
DE3428255A1 (de) 1985-02-21

Similar Documents

Publication Publication Date Title
JPS6243925B2 (en, 2012)
Shimamura et al. Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications
JPH0653317A (ja) 半導体材料、とくにシリコンの汚染の無い小片切断方法
Johnson Liquid encapsulated floating zone melting of GaAs
JPH11265875A (ja) 半導体部片材料の真空乾燥装置および真空乾燥方法
JPH01183432A (ja) 石英ガラス管の加熱方法
US3514265A (en) Method of growing strain-free single crystals
KR940007093B1 (ko) 실리콘막대로부터 소정 크기의 입자를 형성하는 방법
KR19980081378A (ko) 반도체재료의 보호방법
US4045186A (en) Method for producing large soft hexagonal boron nitride particles
US3271118A (en) Seed crystals and methods using the same
JP3285054B2 (ja) 多結晶シリコンの破砕方法
US4292487A (en) Method for initiating the float zone melting of semiconductors
Fukuda et al. Crystal growth of oxide and fluoride materials for optical, piezoelectric and other applications
JPH0239941B2 (en, 2012)
JP3478224B2 (ja) 石英ルツボ回収方法
JP3113250B2 (ja) 半導体材料を保護するための装置および方法
Hervey et al. Synthetic quartz crystal—A review
JP2772344B2 (ja) 化合物半導体多結晶の合成方法
JP3462562B2 (ja) ゲル粒子製造方法及び装置
RU2055196C1 (ru) Способ разрушения горнях пород
JP7680297B2 (ja) リチャージ用多結晶シリコン塊の製造方法。
JP3305687B2 (ja) 半導体材料を分級する方法及び装置
CN117103478A (zh) 一种用于对不合格晶棒节段进行破碎的系统及方法
JP3631425B2 (ja) 単結晶引上げ用チャージロッドの加工方法