DE3424085A1 - Verfahren zur herstellung von hoechstminiaturisierten duennschichtdioden - Google Patents
Verfahren zur herstellung von hoechstminiaturisierten duennschichtdiodenInfo
- Publication number
- DE3424085A1 DE3424085A1 DE19843424085 DE3424085A DE3424085A1 DE 3424085 A1 DE3424085 A1 DE 3424085A1 DE 19843424085 DE19843424085 DE 19843424085 DE 3424085 A DE3424085 A DE 3424085A DE 3424085 A1 DE3424085 A1 DE 3424085A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor layer
- lower electrode
- electrode
- elongated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 120
- 239000010409 thin film Substances 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 229920001296 polysiloxane Polymers 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 238000003754 machining Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58117488A JPH0652794B2 (ja) | 1983-06-29 | 1983-06-29 | 薄膜ダイオードの製造方法 |
| JP58122205A JPS6014468A (ja) | 1983-07-05 | 1983-07-05 | 薄膜ダイオ−ド |
| JP58136162A JPS6028276A (ja) | 1983-07-26 | 1983-07-26 | 薄膜ダイオ−ドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3424085A1 true DE3424085A1 (de) | 1985-01-17 |
| DE3424085C2 DE3424085C2 (US20100056889A1-20100304-C00004.png) | 1989-05-03 |
Family
ID=27313386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843424085 Granted DE3424085A1 (de) | 1983-06-29 | 1984-06-29 | Verfahren zur herstellung von hoechstminiaturisierten duennschichtdioden |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE3424085A1 (US20100056889A1-20100304-C00004.png) |
| FR (1) | FR2548450B1 (US20100056889A1-20100304-C00004.png) |
| GB (1) | GB2144266B (US20100056889A1-20100304-C00004.png) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2579775B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation d'elements de commande non lineaire pour ecran plat de visualisation electro-optique et ecran plat realise selon ce procede |
| FR2579809B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede |
| FR2581781B1 (fr) * | 1985-05-07 | 1987-06-12 | Thomson Csf | Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication |
| NL8702490A (nl) * | 1987-10-19 | 1989-05-16 | Philips Nv | Weergeefinrichting met laterale schottky-dioden. |
| NL8802409A (nl) * | 1988-09-30 | 1990-04-17 | Philips Nv | Weergeefinrichting, steunplaat voorzien van diode en geschikt voor de weergeefinrichting en werkwijze ter vervaardiging van de steunplaat. |
| FR2714765B1 (fr) * | 1993-12-30 | 1996-02-02 | France Telecom | Procédé de réalisation d'une connexion électrique entre deux couches conductrices. |
| DE4410799C2 (de) * | 1994-03-29 | 1996-02-08 | Forschungszentrum Juelich Gmbh | Diode |
| GB2304993B (en) * | 1995-08-23 | 1997-08-06 | Toshiba Cambridge Res Center | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4174217A (en) * | 1974-08-02 | 1979-11-13 | Rca Corporation | Method for making semiconductor structure |
| US4425379A (en) * | 1981-02-11 | 1984-01-10 | Fairchild Camera & Instrument Corporation | Polycrystalline silicon Schottky diode array |
| EP0071244B1 (en) * | 1981-07-27 | 1988-11-23 | Kabushiki Kaisha Toshiba | Thin-film transistor and method of manufacture therefor |
| US4642620A (en) * | 1982-09-27 | 1987-02-10 | Citizen Watch Company Limited | Matrix display device |
-
1984
- 1984-06-29 FR FR8410296A patent/FR2548450B1/fr not_active Expired
- 1984-06-29 DE DE19843424085 patent/DE3424085A1/de active Granted
- 1984-06-29 GB GB08416632A patent/GB2144266B/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| IEEE Electron Device Setters, Vol. EDL-3, No. 7, July 1982, p 187-189 * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2144266B (en) | 1987-03-18 |
| DE3424085C2 (US20100056889A1-20100304-C00004.png) | 1989-05-03 |
| FR2548450A1 (fr) | 1985-01-04 |
| GB2144266A (en) | 1985-02-27 |
| FR2548450B1 (fr) | 1987-04-30 |
| GB8416632D0 (en) | 1984-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |