DE3408761C2 - - Google Patents

Info

Publication number
DE3408761C2
DE3408761C2 DE3408761A DE3408761A DE3408761C2 DE 3408761 C2 DE3408761 C2 DE 3408761C2 DE 3408761 A DE3408761 A DE 3408761A DE 3408761 A DE3408761 A DE 3408761A DE 3408761 C2 DE3408761 C2 DE 3408761C2
Authority
DE
Germany
Prior art keywords
layer
photosensor
photosensor according
light
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3408761A
Other languages
German (de)
English (en)
Other versions
DE3408761A1 (de
Inventor
Toshiyuki Yokohama Kanagawa Jp Komatsu
Katsumi Kawasaki Kanagawa Jp Nakagawa
Masaki Yokohama Kanagawa Jp Fukaya
Tatsumi Hiratsuka Kanagawa Jp Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3408761A1 publication Critical patent/DE3408761A1/de
Application granted granted Critical
Publication of DE3408761C2 publication Critical patent/DE3408761C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Character Input (AREA)
DE19843408761 1983-03-11 1984-03-09 Fotosensor Granted DE3408761A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58041160A JPH0614560B2 (ja) 1983-03-11 1983-03-11 フォトセンサ

Publications (2)

Publication Number Publication Date
DE3408761A1 DE3408761A1 (de) 1984-09-20
DE3408761C2 true DE3408761C2 (enExample) 1991-05-23

Family

ID=12600666

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843408761 Granted DE3408761A1 (de) 1983-03-11 1984-03-09 Fotosensor

Country Status (3)

Country Link
US (1) US4658280A (enExample)
JP (1) JPH0614560B2 (enExample)
DE (1) DE3408761A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133764A (ja) * 1983-12-21 1985-07-16 Seiko Epson Corp 固体撮像素子
JPH0715980B2 (ja) * 1985-09-24 1995-02-22 株式会社日立製作所 受光素子
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
ATE143175T1 (de) * 1990-03-27 1996-10-15 Canon Kk Dünnschicht-halbleiterbauelement
JPH07118549B2 (ja) * 1993-06-25 1995-12-18 工業技術院長 アモルフアス半導体光導電素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device
JPS5562778A (en) * 1978-11-02 1980-05-12 Fuji Photo Film Co Ltd Preparation of photoconductor film
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
JPS5640284A (en) * 1979-09-10 1981-04-16 Matsushita Electric Ind Co Ltd Preparation of semiconductor heterojunction element
JPS55127080A (en) 1979-03-26 1980-10-01 Matsushita Electric Ind Co Ltd Photoconductive element
US4405915A (en) * 1980-03-28 1983-09-20 Canon Kabushiki Kaisha Photoelectric transducing element
US4459163A (en) * 1981-03-11 1984-07-10 Chronar Corporation Amorphous semiconductor method
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4490454A (en) * 1982-03-17 1984-12-25 Canon Kabushiki Kaisha Photoconductive member comprising multiple amorphous layers
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage

Also Published As

Publication number Publication date
US4658280A (en) 1987-04-14
JPS59167075A (ja) 1984-09-20
JPH0614560B2 (ja) 1994-02-23
DE3408761A1 (de) 1984-09-20

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01L 31/08

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee