DE3125976C2 - - Google Patents

Info

Publication number
DE3125976C2
DE3125976C2 DE3125976A DE3125976A DE3125976C2 DE 3125976 C2 DE3125976 C2 DE 3125976C2 DE 3125976 A DE3125976 A DE 3125976A DE 3125976 A DE3125976 A DE 3125976A DE 3125976 C2 DE3125976 C2 DE 3125976C2
Authority
DE
Germany
Prior art keywords
layer
atoms
photosensor according
ohmic
photosensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3125976A
Other languages
German (de)
English (en)
Other versions
DE3125976A1 (de
Inventor
Toshiyuki Yokohama Kanagawa Jp Komatsu
Seishiro Tokio/Tokyo Jp Yoshioka
Masaki Kawasaki Kanagawa Jp Fukaya
Shunichi Tokio/Tokyo Jp Uzawa
Yoshiaki Yokohama Kanagawa Jp Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3125976A1 publication Critical patent/DE3125976A1/de
Application granted granted Critical
Publication of DE3125976C2 publication Critical patent/DE3125976C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE19813125976 1980-07-02 1981-07-01 Photosensor Granted DE3125976A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9087380A JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor

Publications (2)

Publication Number Publication Date
DE3125976A1 DE3125976A1 (de) 1982-02-04
DE3125976C2 true DE3125976C2 (enExample) 1991-01-24

Family

ID=14010612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813125976 Granted DE3125976A1 (de) 1980-07-02 1981-07-01 Photosensor

Country Status (4)

Country Link
JP (1) JPS5715476A (enExample)
AU (1) AU548158B2 (enExample)
DE (1) DE3125976A1 (enExample)
GB (1) GB2080025B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0228712B1 (en) * 1986-01-06 1995-08-09 Sel Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device with a high response speed and method for manufacturing the same
EP0229397B1 (en) * 1986-01-06 1995-08-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array

Also Published As

Publication number Publication date
DE3125976A1 (de) 1982-02-04
AU7245881A (en) 1982-01-07
JPS5715476A (en) 1982-01-26
JPH0334666B2 (enExample) 1991-05-23
AU548158B2 (en) 1985-11-28
GB2080025B (en) 1985-01-09
GB2080025A (en) 1982-01-27

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition