DE3382123D1 - Halbleiteranordnung und herstellungsverfahren. - Google Patents
Halbleiteranordnung und herstellungsverfahren.Info
- Publication number
- DE3382123D1 DE3382123D1 DE8383307118T DE3382123T DE3382123D1 DE 3382123 D1 DE3382123 D1 DE 3382123D1 DE 8383307118 T DE8383307118 T DE 8383307118T DE 3382123 T DE3382123 T DE 3382123T DE 3382123 D1 DE3382123 D1 DE 3382123D1
- Authority
- DE
- Germany
- Prior art keywords
- production method
- semiconductor arrangement
- semiconductor
- arrangement
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57203400A JPS5994454A (ja) | 1982-11-19 | 1982-11-19 | 半導体装置とその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3382123D1 true DE3382123D1 (de) | 1991-02-21 |
Family
ID=16473419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383307118T Expired - Fee Related DE3382123D1 (de) | 1982-11-19 | 1983-11-21 | Halbleiteranordnung und herstellungsverfahren. |
Country Status (4)
Country | Link |
---|---|
US (2) | US4713357A (de) |
EP (1) | EP0110656B1 (de) |
JP (1) | JPS5994454A (de) |
DE (1) | DE3382123D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231753A (ja) * | 1985-04-08 | 1986-10-16 | Nec Corp | Mis型ダイナミツクランダムアクセスメモリ装置 |
US4784973A (en) * | 1987-08-24 | 1988-11-15 | Inmos Corporation | Semiconductor contact silicide/nitride process with control for silicide thickness |
US5087951A (en) * | 1988-05-02 | 1992-02-11 | Micron Technology | Semiconductor memory device transistor and cell structure |
JPH0834297B2 (ja) * | 1988-12-28 | 1996-03-29 | 三菱電機株式会社 | 半導体装置 |
AT404524B (de) * | 1991-09-03 | 1998-12-28 | Austria Mikrosysteme Int | Verfahren zur herstellung von selbstausgerichteten, lateralen und vertikalen halbleiterbauelementen |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3558366A (en) * | 1968-09-17 | 1971-01-26 | Bell Telephone Labor Inc | Metal shielding for ion implanted semiconductor device |
JPS50125684A (de) * | 1974-03-20 | 1975-10-02 | ||
US4240092A (en) * | 1976-09-13 | 1980-12-16 | Texas Instruments Incorporated | Random access memory cell with different capacitor and transistor oxide thickness |
US4102714A (en) * | 1976-04-23 | 1978-07-25 | International Business Machines Corporation | Process for fabricating a low breakdown voltage device for polysilicon gate technology |
US4290186A (en) * | 1977-04-19 | 1981-09-22 | National Semiconductor Corp. | Method of making integrated semiconductor structure having an MOS and a capacitor device |
US4234889A (en) * | 1977-05-31 | 1980-11-18 | Texas Instruments Incorporated | Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon |
US4202001A (en) * | 1978-05-05 | 1980-05-06 | Rca Corporation | Semiconductor device having grid for plating contacts |
JPS5519857A (en) * | 1978-07-28 | 1980-02-12 | Nec Corp | Semiconductor |
US4240195A (en) * | 1978-09-15 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Dynamic random access memory |
JPS5575266A (en) * | 1978-11-30 | 1980-06-06 | Mitsubishi Electric Corp | Semiconductor integrated device |
JPS5927102B2 (ja) * | 1979-12-24 | 1984-07-03 | 富士通株式会社 | 半導体記憶装置 |
JPS56107390A (en) * | 1980-01-29 | 1981-08-26 | Nec Corp | Semiconductor memory device |
JPS5775463A (en) * | 1980-10-28 | 1982-05-12 | Nec Corp | Manufacture of semiconductor device |
US4551908A (en) * | 1981-06-15 | 1985-11-12 | Nippon Electric Co., Ltd. | Process of forming electrodes and interconnections on silicon semiconductor devices |
US4455739A (en) * | 1982-04-19 | 1984-06-26 | Texas Instruments Incorporated | Process protection for individual device gates on large area MIS devices |
JPS594070A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US4543597A (en) * | 1982-06-30 | 1985-09-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Dynamic semiconductor memory and manufacturing method thereof |
US4543594A (en) * | 1982-09-07 | 1985-09-24 | Intel Corporation | Fusible link employing capacitor structure |
JPS602784B2 (ja) * | 1982-12-20 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
JPS59201461A (ja) * | 1983-04-28 | 1984-11-15 | Toshiba Corp | 読み出し専用半導体記憶装置およびその製造方法 |
-
1982
- 1982-11-19 JP JP57203400A patent/JPS5994454A/ja active Pending
-
1983
- 1983-11-21 US US06/553,944 patent/US4713357A/en not_active Expired - Lifetime
- 1983-11-21 EP EP83307118A patent/EP0110656B1/de not_active Expired - Lifetime
- 1983-11-21 DE DE8383307118T patent/DE3382123D1/de not_active Expired - Fee Related
-
1987
- 1987-01-08 US US07/001,484 patent/US4914498A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0110656A3 (en) | 1986-03-19 |
US4914498A (en) | 1990-04-03 |
EP0110656B1 (de) | 1991-01-16 |
EP0110656A2 (de) | 1984-06-13 |
US4713357A (en) | 1987-12-15 |
JPS5994454A (ja) | 1984-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |