DE3379565D1 - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- DE3379565D1 DE3379565D1 DE8383112159T DE3379565T DE3379565D1 DE 3379565 D1 DE3379565 D1 DE 3379565D1 DE 8383112159 T DE8383112159 T DE 8383112159T DE 3379565 T DE3379565 T DE 3379565T DE 3379565 D1 DE3379565 D1 DE 3379565D1
- Authority
- DE
- Germany
- Prior art keywords
- photovoltaic device
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57234197A JPH0644638B2 (ja) | 1982-12-29 | 1982-12-29 | 異質単位セル同士のスタック形光起電力素子 |
JP58049318A JPS59175170A (ja) | 1983-03-24 | 1983-03-24 | タンデム型太陽電池 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3379565D1 true DE3379565D1 (en) | 1989-05-11 |
Family
ID=26389698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383112159T Expired DE3379565D1 (en) | 1982-12-29 | 1983-12-02 | Photovoltaic device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4496788A (de) |
EP (1) | EP0113434B2 (de) |
DE (1) | DE3379565D1 (de) |
Families Citing this family (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4536607A (en) * | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
US4600801A (en) * | 1984-11-02 | 1986-07-15 | Sovonics Solar Systems | Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
US4609771A (en) * | 1984-11-02 | 1986-09-02 | Sovonics Solar Systems | Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
US4745446A (en) * | 1985-02-11 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Photodetector and amplifier integration |
JPH0712100B2 (ja) * | 1985-03-25 | 1995-02-08 | 株式会社日立製作所 | 半導体発光素子 |
DE3516117A1 (de) * | 1985-05-04 | 1986-11-06 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
US4923524A (en) * | 1985-05-06 | 1990-05-08 | Chronar Corp. | Wide ranging photovoltaic laminates comprising particulate semiconductors |
FR2615327A1 (fr) * | 1987-03-27 | 1988-11-18 | Sanyo Electric Co | Dispositif photovoltaique |
JPS63182551U (de) * | 1987-05-15 | 1988-11-24 | ||
JP2740284B2 (ja) * | 1989-08-09 | 1998-04-15 | 三洋電機株式会社 | 光起電力素子 |
DE4116695C2 (de) * | 1990-05-23 | 1994-11-24 | Mitsubishi Electric Corp | Tandem-Solarzelle und Herstellungsverfahren für dieselbe |
US5288338A (en) * | 1990-05-23 | 1994-02-22 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method of producing the solar cell |
DE4143408C2 (de) * | 1990-05-23 | 1994-11-17 | Mitsubishi Electric Corp | Verfahren zur Herstellung einer Solarzelle |
US5103284A (en) * | 1991-02-08 | 1992-04-07 | Energy Conversion Devices, Inc. | Semiconductor with ordered clusters |
JPH04275467A (ja) * | 1991-03-04 | 1992-10-01 | Sanyo Electric Co Ltd | フォトトランジスタ |
CA2120295C (en) * | 1993-04-21 | 1998-09-15 | Nazir P. Kherani | Nuclear batteries |
US5808233A (en) * | 1996-03-11 | 1998-09-15 | Temple University-Of The Commonwealth System Of Higher Education | Amorphous-crystalline thermocouple and methods of its manufacture |
JPH10117006A (ja) | 1996-08-23 | 1998-05-06 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換装置 |
JP2001217440A (ja) | 2000-02-04 | 2001-08-10 | Kanegafuchi Chem Ind Co Ltd | ハイブリッド型薄膜光電変換装置とそれに用いられる透光性積層体 |
WO2002091482A2 (en) * | 2001-05-08 | 2002-11-14 | Massachusetts Institute Of Technology | Silicon solar cell with germanium backside solar cell |
JP2003298077A (ja) * | 2002-03-29 | 2003-10-17 | Ebara Corp | 太陽電池 |
US7026596B2 (en) * | 2003-10-30 | 2006-04-11 | Micron Technology, Inc. | High-low sensitivity pixel |
JP4969785B2 (ja) * | 2005-02-16 | 2012-07-04 | 本田技研工業株式会社 | カルコパイライト型太陽電池及びその製造方法 |
US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
US20060207647A1 (en) | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
US8399855B2 (en) * | 2006-07-21 | 2013-03-19 | Koninklijke Philips Electronics N.V. | Photodiode for detection within molecular diagnostics |
US20080110486A1 (en) * | 2006-11-15 | 2008-05-15 | General Electric Company | Amorphous-crystalline tandem nanostructured solar cells |
US20080160024A1 (en) * | 2006-12-07 | 2008-07-03 | Board Of Trustees Of The University Of Arkansas | Inhibition of cancer metastasis |
CN101622722B (zh) * | 2007-02-27 | 2012-11-21 | 卡尔蔡司激光器材有限责任公司 | 连续涂覆设备、生产晶态薄膜和太阳电池的方法 |
DE102007009924A1 (de) * | 2007-02-27 | 2008-08-28 | Carl Zeiss Laser Optics Gmbh | Durchlaufbeschichtungsanlage, Verfahren zur Herstellung kristalliner Dünnschichten und Solarzellen sowie Solarzelle |
KR20090028883A (ko) * | 2007-09-17 | 2009-03-20 | 주성엔지니어링(주) | 태양전지 및 그 제조방법 |
US7851249B2 (en) * | 2007-10-31 | 2010-12-14 | Atomic Energy Council - Institute Of Nuclear Energy Research | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer |
US20090293955A1 (en) * | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
EP2208238B1 (de) * | 2007-11-09 | 2013-04-24 | Sunpreme Inc. | Kostengünstige solarzellen und herstellungsverfahren dafür |
KR101608953B1 (ko) * | 2007-11-09 | 2016-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 및 그 제조 방법 |
TWI452703B (zh) * | 2007-11-16 | 2014-09-11 | Semiconductor Energy Lab | 光電轉換裝置及其製造方法 |
US20090131730A1 (en) * | 2007-11-16 | 2009-05-21 | Lun-Teh Yuen | Oxygenate conversion using boron-containing molecular sieve cha |
US20090139558A1 (en) * | 2007-11-29 | 2009-06-04 | Shunpei Yamazaki | Photoelectric conversion device and manufacturing method thereof |
JP5248994B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
JP5248995B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
EP2075850A3 (de) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelektrische Umwandlungsvorrichtung und Verfahren zu ihrer Herstellung |
JP5572307B2 (ja) * | 2007-12-28 | 2014-08-13 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
DE102008006987A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
US8129613B2 (en) * | 2008-02-05 | 2012-03-06 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having low base resistivity and method of making |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US8076175B2 (en) | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211627A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
EP2105972A3 (de) | 2008-03-28 | 2015-06-10 | Semiconductor Energy Laboratory Co, Ltd. | Photoelektrische Umwandlungsvorrichtung und Verfahren zu deren Herstellung |
US7947523B2 (en) * | 2008-04-25 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
US7951656B2 (en) * | 2008-06-06 | 2011-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8338218B2 (en) * | 2008-06-26 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module |
US8338209B2 (en) * | 2008-08-10 | 2012-12-25 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having a rear junction and method of making |
US20100032010A1 (en) * | 2008-08-10 | 2010-02-11 | Twin Creeks Technologies, Inc. | Method to mitigate shunt formation in a photovoltaic cell comprising a thin lamina |
WO2010044901A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | Monolithic imod color enhanced photovoltaic cell |
US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
TWI379430B (en) * | 2009-04-16 | 2012-12-11 | Atomic Energy Council | A method of fabricating a thin interface for internal light reflection and impurities isolation |
WO2010126314A2 (ko) * | 2009-04-30 | 2010-11-04 | 한양대학교 산학협력단 | 탄소나노튜브층을 포함하는 실리콘 태양전지 |
US8188363B2 (en) | 2009-08-07 | 2012-05-29 | Sunpower Corporation | Module level solutions to solar cell polarization |
US8946839B1 (en) | 2009-08-20 | 2015-02-03 | Hrl Laboratories, Llc | Reduced volume infrared detector |
US7928389B1 (en) | 2009-08-20 | 2011-04-19 | Hrl Laboratories, Llc | Wide bandwidth infrared detector and imager |
US7977637B1 (en) | 2009-08-20 | 2011-07-12 | Hrl Laboratories, Llc | Honeycomb infrared detector |
US20110048505A1 (en) * | 2009-08-27 | 2011-03-03 | Gabriela Bunea | Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve |
US20110088763A1 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | Method and apparatus for improving photovoltaic efficiency |
JP5706670B2 (ja) | 2009-11-24 | 2015-04-22 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
TW201133881A (en) * | 2010-03-22 | 2011-10-01 | Auria Solar Co Ltd | Thin film solar cell and manufacturing method thereof |
TWI408823B (zh) * | 2010-06-11 | 2013-09-11 | An Ching New Energy Machinery & Equipment Co Ltd | The solar cell structure of Sanhuan semiconductor and its manufacturing method |
TW201145546A (en) * | 2010-06-15 | 2011-12-16 | An Ching New Energy Machinery & Equipment Co Ltd | Solar cell structure with high electro-optic conversion efficiency and manufacturing method thereof |
JP5753445B2 (ja) | 2010-06-18 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
US8377738B2 (en) | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
CN102479848A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 三五族半导体的太阳能电池结构及其制作方法 |
CN102479849A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 具有高光电转换效率的太阳能电池结构及其制作方法 |
US9437758B2 (en) | 2011-02-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
KR20120119807A (ko) * | 2011-04-22 | 2012-10-31 | 삼성전자주식회사 | 태양 전지 |
US9099596B2 (en) * | 2011-07-29 | 2015-08-04 | International Business Machines Corporation | Heterojunction photovoltaic device and fabrication method |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
DE102011115028A1 (de) * | 2011-10-07 | 2013-04-11 | Ewe-Forschungszentrum Für Energietechnologie E. V. | Photovoltaische Mehrfach-Solarzelle |
US9373741B2 (en) * | 2012-08-15 | 2016-06-21 | International Business Machines Corporation | Heterostructure germanium tandem junction solar cell |
US9812590B2 (en) | 2012-10-25 | 2017-11-07 | Sunpower Corporation | Bifacial solar cell module with backside reflector |
US9035172B2 (en) | 2012-11-26 | 2015-05-19 | Sunpower Corporation | Crack resistant solar cell modules |
US9306106B2 (en) | 2012-12-18 | 2016-04-05 | International Business Machines Corporation | Monolithic integration of heterojunction solar cells |
US8796061B2 (en) | 2012-12-21 | 2014-08-05 | Sunpower Corporation | Module assembly for thin solar cells |
KR20140082012A (ko) * | 2012-12-21 | 2014-07-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US10903261B1 (en) | 2013-03-15 | 2021-01-26 | Hrl Laboratories, Llc | Triple output, dual-band detector |
US9490292B1 (en) | 2013-03-15 | 2016-11-08 | Hrl Laboratories, Llc | Dual-band detector array |
KR20140135881A (ko) * | 2013-05-16 | 2014-11-27 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US9685571B2 (en) | 2013-08-14 | 2017-06-20 | Sunpower Corporation | Solar cell module with high electric susceptibility layer |
DE102015015017A1 (de) | 2015-11-19 | 2017-05-24 | Institut Für Solarenergieforschung Gmbh | Solarzelle und Verfahren zur Herstellung einer Solarzelle mit mehreren durch ladungsträgerselektive Kontakte miteinander verbundenen Absorbern |
JP6554230B2 (ja) | 2016-04-07 | 2019-07-31 | 株式会社カネカ | 多接合光電変換装置の製造方法 |
US10020331B1 (en) | 2016-07-21 | 2018-07-10 | Hrl Laboratories, Llc | Dual-band lateral-effect position sensor |
JP6782211B2 (ja) * | 2017-09-08 | 2020-11-11 | 株式会社東芝 | 透明電極、それを用いた素子、および素子の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
JPS55125680A (en) * | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
US4272641A (en) * | 1979-04-19 | 1981-06-09 | Rca Corporation | Tandem junction amorphous silicon solar cells |
US4270018A (en) * | 1979-12-26 | 1981-05-26 | Gibbons James F | Amorphous solar cells |
US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
US4377723A (en) * | 1980-05-02 | 1983-03-22 | The University Of Delaware | High efficiency thin-film multiple-gap photovoltaic device |
US4292461A (en) * | 1980-06-20 | 1981-09-29 | International Business Machines Corporation | Amorphous-crystalline tandem solar cell |
JPS5749278A (en) * | 1980-09-08 | 1982-03-23 | Mitsubishi Electric Corp | Amorphous silicone solar cell |
-
1983
- 1983-09-02 US US06/528,988 patent/US4496788A/en not_active Expired - Lifetime
- 1983-12-02 EP EP83112159A patent/EP0113434B2/de not_active Expired - Lifetime
- 1983-12-02 DE DE8383112159T patent/DE3379565D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4496788A (en) | 1985-01-29 |
EP0113434A1 (de) | 1984-07-18 |
EP0113434B2 (de) | 1995-08-30 |
EP0113434B1 (de) | 1989-04-05 |
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