JP6554230B2 - 多接合光電変換装置の製造方法 - Google Patents
多接合光電変換装置の製造方法 Download PDFInfo
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Description
図3は、第一光電変換ユニット10と第二光電変換ユニット20とが積層された多接合ユニットの一形態を表す模式的断面図である。第一光電変換ユニット10側の表面には第一電極50が設けられており、第二光電変換ユニット20側の表面には第二電極55が設けられている。
本発明の製造方法では、第一光電変換ユニットと第二光電変換ユニットとが積層された積層ユニットの第一光電変換ユニットの表面にパターニングされた第一電極が設けられ、これらのパターニングされた電極が電気的に分離された状態で、逆バイアス処理が行われる。
以下、図4A〜Fを参照して、図1,2に示す多接合光電変換装置100の製造方法の一実施形態を説明する。
まず、図4Aに示すように、第一光電変換ユニット10と第二光電変換ユニット20とが積層され直列接続された積層ユニット101を準備する。第二光電変換ユニット20の光電変換層がシリコン基板等の半導体基板である場合は、第二光電変換ユニット20上に、第一光電変換ユニット10を積層形成することが好ましい。
図4Bに示すように、第一光電変換ユニット10上に、第一電極51が形成される。第一光電変換ユニットにピンホール等の欠点が存在すると、この欠点部分に第一電極の導電性材料が接触したり、導電性材料がピンホール内に埋め込まれることにより、リーク箇所が形成される。
第一光電変換ユニット10上に設けられた第一電極51が複数の領域51a〜iに分離された状態で、逆バイアス処理により、第一光電変換ユニット10のリーク除去が行われる。図4Dは、逆バイアス処理工程の概念図である。
逆バイアス処理により第一光電変換ユニットのリークを除去後に、互いに離間された第一電極の複数の領域51a〜51iを電気的に接続することが好ましい。互いに離間された第一電極を電気的に接続する方法としては、分離溝59に導電性材料を充填して、小面積に分離された電極51a〜51iを導通させる方法や、複数の領域に跨るように、第一電極上に導電性材料を設ける方法が挙げられる。
図5に示す実施形態のように、導電性部材の接続前に、分離溝59内に絶縁材料を充填して、光電変換ユニット10と導電性材料との接触を防止してもよい。図5A〜Fは、本発明の製造方法の一形態の工程概念図である。この形態では、分離溝59内に絶縁材料を充填後に、インターコネクタ81が設けられる。まず、第一光電変換ユニット10と第二光電変換ユニット20との積層ユニット111を準備する。この積層ユニットは、図4Aの積層ユニット101と同様である。
上記の各実施形態では、互いに離間された第一電極51の複数の領域のそれぞれに設けられたフィンガー電極71を、インターコネクタやバスバー電極を介して接続することにより、第一電極の複数の領域が電気的に接続される。別の実施形態として、第一電極51を離間していた分離溝内に、金属や導電性酸化物等の導電性材料を充填することにより、第一電極の複数の領域が電気的に接続されてもよい。
図8A〜Dは、金属材料により分離溝59を充填することにより、第一電極の複数の領域の電気的接続が行われる実施形態の工程概念図である。まず図7A〜Cと同様に、第一光電変換ユニット10と第二光電変換ユニット20との積層ユニットの準備、分離溝59によりパターニングされた第一電極51の形成、および第一逆バイアス処理(図8A)が実施される。
11 第一半導体層(光電変換層)
20 第二光電変換ユニット
21 第二半導体層(光電変換層)
50,51 第一電極
59 分離溝
55 第二電極
61 絶縁層
71,73 フィンガー電極
77 バスバー電極
81 配線材(インターコネクタ)
90 電源
99 光源
100 多接合光電変換装置
101〜104 積層ユニット
Claims (15)
- 第一電極;光電変換層として薄膜の第一半導体層を含む第一光電変換ユニット;および光電変換層として第二半導体層を含み、前記第一光電変換ユニットと直列接続された第二光電変換ユニット、をこの順に備える多接合光電変換装置の製造方法であって、
第一光電変換ユニット上に、分離溝により離間された複数の領域にパターニングされた第一電極を設ける工程;および
第一電極の1つの領域と第二光電変換ユニットとの間に逆バイアス電圧を印加して、第一半導体層に存在するリークを除去する工程、を有し、
前記第二光電変換ユニットに、前記第一光電変換ユニットよりも大きな光電流が発生するように優先的に光を照射した状態で、前記逆バイアス電圧の印加が行われる、多接合光電変換装置の製造方法。 - 前記第一半導体層は前記第二半導体層よりもバンドギャップが広く、第一電極側が受光面である、請求項1に記載の多接合光電変換装置の製造方法。
- 前記第一電極が透明電極である、請求項1または2に記載の多接合光電変換装置の製造方法。
- 前記第二半導体層は結晶半導体基板である、請求項1〜3のいずれか1項に記載の多接合光電変換装置の製造方法。
- 前記第一半導体層はペロブスカイト型結晶構造の感光性材料を含有する、請求項1〜4のいずれか1項に記載の多接合光電変換装置の製造方法。
- 前記第一光電変換ユニット上に電極層を製膜後、前記電極層にレーザ光を照射することにより前記分離溝が形成され、複数の領域にパターニングされた前記第一電極が形成される、請求項1〜5のいずれか1項に記載の多接合光電変換装置の製造方法。
- 前記第一光電変換ユニット上に電極層を製膜後、前記電極層のパターンエッチングにより前記分離溝が形成され、複数の領域にパターニングされた前記第一電極が形成される、請求項1〜5のいずれか1項に記載の多接合光電変換装置の製造方法。
- 前記第一光電変換ユニット上にマスクを被覆した状態で電極層を製膜することにより、マスクに被覆された領域に前記分離溝が形成され、複数の領域にパターニングされた前記第一電極が形成される、請求項1〜5のいずれか1項に記載の多接合光電変換装置の製造方法。
- 前記第一電極の複数の領域のそれぞれに、金属電極が設けられ、
前記金属電極を電源と接続することにより、前記逆バイアス電圧の印加が行われる、請求項1〜8のいずれか1項に記載の多接合光電変換装置の製造方法。 - 前記リークを除去する工程を実施後に、互いに離間された前記第一電極の複数の領域を電気的に接続する工程をさらに有する、請求項1〜9のいずれか1項に記載の多接合光電変換装置の製造方法。
- 前記分離溝内に導電性材料を充填することにより、前記第一電極の複数の領域が電気的に接続される、請求項10に記載の多接合光電変換装置の製造方法。
- 前記分離溝内に導電性材料を充填後に、
前記第二光電変換ユニットに、前記第一光電変換ユニットよりも大きな光電流が発生するように優先的に光を照射した状態で、
前記分離溝内に充填された導電性材料と、前記第二光電変換ユニットとの間に逆バイアス電圧を印加することにより、分離溝形成領域に残存している前記第一半導体層のリークの除去が行われる、請求項11に記載の多接合光電変換装置の製造方法。 - 前記分離溝内に導電性材料を充填後に、前記第一電極の複数の領域に跨るように、前記第一電極上に導電性材料が設けられる、請求項11または12に記載の多接合光電変換装置の製造方法。
- 前記第一電極の複数の領域に跨るように、前記第一電極上に導電性材料が設けられることにより、前記第一電極の複数の領域が電気的に接続される、請求項10に記載の多接合光電変換装置の製造方法。
- 前記導電性材料が設けられる前に、前記分離溝内に絶縁材料が充填される、請求項14に記載の多接合光電変換装置の製造方法。
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