DE3345449C2 - - Google Patents
Info
- Publication number
- DE3345449C2 DE3345449C2 DE3345449A DE3345449A DE3345449C2 DE 3345449 C2 DE3345449 C2 DE 3345449C2 DE 3345449 A DE3345449 A DE 3345449A DE 3345449 A DE3345449 A DE 3345449A DE 3345449 C2 DE3345449 C2 DE 3345449C2
- Authority
- DE
- Germany
- Prior art keywords
- thyristors
- voltage
- thyristor
- mos field
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- 230000005669 field effect Effects 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 3
- 241000863814 Thyris Species 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Facsimile Heads (AREA)
- Thyristors (AREA)
- Facsimile Scanning Arrangements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/451,792 US4535251A (en) | 1982-12-21 | 1982-12-21 | A.C. Solid state relay circuit and structure |
| US55502583A | 1983-11-25 | 1983-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3345449A1 DE3345449A1 (de) | 1984-07-12 |
| DE3345449C2 true DE3345449C2 (ja) | 1989-08-17 |
Family
ID=27036523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833345449 Granted DE3345449A1 (de) | 1982-12-21 | 1983-12-15 | Festkoerper-wechselspannungsrelais |
Country Status (12)
| Country | Link |
|---|---|
| KR (1) | KR900004197B1 (ja) |
| BR (1) | BR8307043A (ja) |
| CA (1) | CA1237170A (ja) |
| CH (1) | CH664861A5 (ja) |
| DE (1) | DE3345449A1 (ja) |
| FR (1) | FR2538170B1 (ja) |
| GB (2) | GB2133641B (ja) |
| IL (1) | IL70462A (ja) |
| IT (1) | IT1194526B (ja) |
| MX (2) | MX155562A (ja) |
| NL (1) | NL8304376A (ja) |
| SE (1) | SE8306952L (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19636553C2 (de) * | 1995-09-11 | 2001-02-08 | Sharp Kk | Integrierte Halbleiterschaltung mit Thyristor |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590750B1 (fr) * | 1985-11-22 | 1991-05-10 | Telemecanique Electrique | Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif |
| GB2234642A (en) * | 1989-07-19 | 1991-02-06 | Philips Nv | Protection for a switched bridge circuit |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| GB2254730B (en) * | 1991-04-08 | 1994-09-21 | Champion Spark Plug Europ | High current photosensitive electronic switch |
| US6518604B1 (en) * | 2000-09-21 | 2003-02-11 | Conexant Systems, Inc. | Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
| EP3249815B1 (en) * | 2016-05-23 | 2019-08-28 | NXP USA, Inc. | Circuit arrangement for fast turn-off of bi-directional switching device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5416839B2 (ja) * | 1973-03-06 | 1979-06-25 | ||
| US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| DE2932969A1 (de) * | 1979-04-20 | 1980-10-30 | Ske | Halbleiter-relaiskreis und verfahren zu seiner herstellung |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
| DE3019907A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer zweirichtungsthyristor |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| US4361798A (en) * | 1980-10-27 | 1982-11-30 | Pitney Bowes Inc. | System for extending the voltage range of a phase-fired triac controller |
-
1983
- 1983-12-15 SE SE8306952A patent/SE8306952L/xx not_active Application Discontinuation
- 1983-12-15 IL IL70462A patent/IL70462A/xx unknown
- 1983-12-15 DE DE19833345449 patent/DE3345449A1/de active Granted
- 1983-12-20 NL NL8304376A patent/NL8304376A/xx not_active Application Discontinuation
- 1983-12-20 KR KR1019830006040A patent/KR900004197B1/ko not_active IP Right Cessation
- 1983-12-20 IT IT24285/83A patent/IT1194526B/it active
- 1983-12-20 CH CH6781/83A patent/CH664861A5/de not_active IP Right Cessation
- 1983-12-20 CA CA000443824A patent/CA1237170A/en not_active Expired
- 1983-12-21 GB GB08333998A patent/GB2133641B/en not_active Expired
- 1983-12-21 FR FR8320500A patent/FR2538170B1/fr not_active Expired
- 1983-12-21 BR BR8307043A patent/BR8307043A/pt unknown
- 1983-12-21 MX MX199861A patent/MX155562A/es unknown
- 1983-12-21 MX MX4482A patent/MX160049A/es unknown
-
1986
- 1986-02-20 GB GB08604263A patent/GB2174242B/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19636553C2 (de) * | 1995-09-11 | 2001-02-08 | Sharp Kk | Integrierte Halbleiterschaltung mit Thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| IL70462A0 (en) | 1984-03-30 |
| FR2538170B1 (fr) | 1988-05-27 |
| GB8604263D0 (en) | 1986-03-26 |
| MX160049A (es) | 1989-11-13 |
| CH664861A5 (de) | 1988-03-31 |
| KR840007203A (ko) | 1984-12-05 |
| CA1237170A (en) | 1988-05-24 |
| GB2174242B (en) | 1987-06-10 |
| GB2133641B (en) | 1986-10-22 |
| IT8324285A1 (it) | 1985-06-20 |
| NL8304376A (nl) | 1984-07-16 |
| DE3345449A1 (de) | 1984-07-12 |
| BR8307043A (pt) | 1984-07-31 |
| IL70462A (en) | 1987-09-16 |
| GB8333998D0 (en) | 1984-02-01 |
| SE8306952D0 (sv) | 1983-12-15 |
| SE8306952L (sv) | 1984-06-22 |
| GB2133641A (en) | 1984-07-25 |
| GB2174242A (en) | 1986-10-29 |
| IT8324285A0 (it) | 1983-12-20 |
| IT1194526B (it) | 1988-09-22 |
| FR2538170A1 (fr) | 1984-06-22 |
| MX155562A (es) | 1988-03-25 |
| KR900004197B1 (ko) | 1990-06-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8369 | Partition in: |
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| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |