DE3328958C2 - - Google Patents

Info

Publication number
DE3328958C2
DE3328958C2 DE3328958A DE3328958A DE3328958C2 DE 3328958 C2 DE3328958 C2 DE 3328958C2 DE 3328958 A DE3328958 A DE 3328958A DE 3328958 A DE3328958 A DE 3328958A DE 3328958 C2 DE3328958 C2 DE 3328958C2
Authority
DE
Germany
Prior art keywords
epitaxial layer
layer
area
conductivity type
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3328958A
Other languages
German (de)
English (en)
Other versions
DE3328958A1 (de
Inventor
Rudy Johan Van De Sunnyvale Calif. Us Plassche
Eise Carel Eindhoven Nl Dijkmans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3328958A1 publication Critical patent/DE3328958A1/de
Application granted granted Critical
Publication of DE3328958C2 publication Critical patent/DE3328958C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE19833328958 1982-08-25 1983-08-11 Integrierter widerstand Granted DE3328958A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8203323A NL8203323A (nl) 1982-08-25 1982-08-25 Geintegreerde weerstand.

Publications (2)

Publication Number Publication Date
DE3328958A1 DE3328958A1 (de) 1984-03-01
DE3328958C2 true DE3328958C2 (enrdf_load_stackoverflow) 1992-07-09

Family

ID=19840181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833328958 Granted DE3328958A1 (de) 1982-08-25 1983-08-11 Integrierter widerstand

Country Status (9)

Country Link
US (1) US4466013A (enrdf_load_stackoverflow)
JP (1) JPS5955051A (enrdf_load_stackoverflow)
CA (1) CA1200615A (enrdf_load_stackoverflow)
DE (1) DE3328958A1 (enrdf_load_stackoverflow)
FR (1) FR2532473B1 (enrdf_load_stackoverflow)
GB (1) GB2126784B (enrdf_load_stackoverflow)
HK (1) HK76486A (enrdf_load_stackoverflow)
IT (1) IT1170191B (enrdf_load_stackoverflow)
NL (1) NL8203323A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3526461A1 (de) * 1985-07-24 1987-01-29 Telefunken Electronic Gmbh Widerstandskette
US5061414A (en) * 1989-09-05 1991-10-29 Engle Glen B Method of making carbon-carbon composites
DE19917370C1 (de) * 1999-04-16 2000-10-05 St Microelectronics Gmbh In einer integrierten halbleiterschaltung gebildeter weitgehend spannungsunabhängiger elektrischer Widerstand
US6529152B1 (en) 1999-10-15 2003-03-04 Cyngal Integrated Products, Inc. High precision SAR converter using resistor strip with auto zeroing function
DE10243604B4 (de) * 2002-09-19 2006-07-27 Infineon Technologies Ag Anordnung von mehreren Widerständen eines Halbleiter-Bauelements
US8384157B2 (en) 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
EP2266132A1 (en) * 2008-04-11 2010-12-29 Freescale Semiconductor, Inc. Poly-resistor, and linear amplifier

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702955A (en) * 1969-07-11 1972-11-14 Nat Semiconductor Corp Multiple emitter transistor apparatus
US3700977A (en) * 1971-02-17 1972-10-24 Motorola Inc Diffused resistor
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
US3990092A (en) * 1974-01-11 1976-11-02 Hitachi, Ltd. Resistance element for semiconductor integrated circuit
GB1457586A (en) * 1974-03-20 1976-12-08 Texas Instruments Ltd Integrated circuits
US4131809A (en) * 1974-06-17 1978-12-26 U.S. Philips Corporation Symmetrical arrangement for forming a variable alternating-current resistance
JPS5513426B2 (enrdf_load_stackoverflow) * 1974-06-18 1980-04-09
FR2351505A1 (fr) * 1976-05-13 1977-12-09 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
FR2417854A1 (fr) * 1978-02-21 1979-09-14 Radiotechnique Compelec Transistor comportant une zone resistive integree dans sa region d'emetteur
JPS582439B2 (ja) * 1978-11-27 1983-01-17 富士通株式会社 ブ−トストラツプ回路
DE2853116A1 (de) * 1978-12-08 1980-06-26 Bosch Gmbh Robert In monolithischer technik ausgefuehrtes widerstandselement
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
JPS57162356A (en) * 1981-03-30 1982-10-06 Toshiba Corp Integrated circuit device

Also Published As

Publication number Publication date
CA1200615A (en) 1986-02-11
IT1170191B (it) 1987-06-03
HK76486A (en) 1986-10-17
GB2126784A (en) 1984-03-28
GB8322512D0 (en) 1983-09-21
FR2532473A1 (fr) 1984-03-02
JPH0439786B2 (enrdf_load_stackoverflow) 1992-06-30
JPS5955051A (ja) 1984-03-29
IT8322606A0 (it) 1983-08-22
DE3328958A1 (de) 1984-03-01
FR2532473B1 (fr) 1986-11-14
US4466013A (en) 1984-08-14
GB2126784B (en) 1986-02-19
NL8203323A (nl) 1984-03-16

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: KUNZE, K., DIPL.-ING., PAT.-ASS., 2000 HAMBURG

D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee