FR2351505A1 - Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees - Google Patents

Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Info

Publication number
FR2351505A1
FR2351505A1 FR7615001A FR7615001A FR2351505A1 FR 2351505 A1 FR2351505 A1 FR 2351505A1 FR 7615001 A FR7615001 A FR 7615001A FR 7615001 A FR7615001 A FR 7615001A FR 2351505 A1 FR2351505 A1 FR 2351505A1
Authority
FR
France
Prior art keywords
implanted
correcting
semiconductor
procedure
tension coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615001A
Other languages
English (en)
Other versions
FR2351505B1 (fr
Inventor
Francois Delaporte
Robert Hornung
Gerard Lebesnerais
Jean-Paul Nuez
Anne-Marie Lamouroux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie IBM France SAS
Original Assignee
Compagnie IBM France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie IBM France SAS filed Critical Compagnie IBM France SAS
Priority to FR7615001A priority Critical patent/FR2351505A1/fr
Priority to GB1702477A priority patent/GB1517266A/en
Priority to DE19772720653 priority patent/DE2720653A1/de
Priority to JP5274977A priority patent/JPS52137988A/ja
Priority to IT2341877A priority patent/IT1115304B/it
Publication of FR2351505A1 publication Critical patent/FR2351505A1/fr
Application granted granted Critical
Publication of FR2351505B1 publication Critical patent/FR2351505B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
FR7615001A 1976-05-13 1976-05-13 Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees Granted FR2351505A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7615001A FR2351505A1 (fr) 1976-05-13 1976-05-13 Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees
GB1702477A GB1517266A (en) 1976-05-13 1977-04-25 Method of compensating for the voltage coefficient of ion-implanted or diffused resistors
DE19772720653 DE2720653A1 (de) 1976-05-13 1977-05-07 Verfahren und schaltungsanordnung zur korrektur der spannungsabhaengigkeit von halbleiterwiderstaenden
JP5274977A JPS52137988A (en) 1976-05-13 1977-05-10 Method of correcting voltage coefficient of semiconductor resistor
IT2341877A IT1115304B (it) 1976-05-13 1977-05-11 Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615001A FR2351505A1 (fr) 1976-05-13 1976-05-13 Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Publications (2)

Publication Number Publication Date
FR2351505A1 true FR2351505A1 (fr) 1977-12-09
FR2351505B1 FR2351505B1 (fr) 1979-10-12

Family

ID=9173307

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615001A Granted FR2351505A1 (fr) 1976-05-13 1976-05-13 Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Country Status (5)

Country Link
JP (1) JPS52137988A (fr)
DE (1) DE2720653A1 (fr)
FR (1) FR2351505A1 (fr)
GB (1) GB1517266A (fr)
IT (1) IT1115304B (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000863A1 (fr) * 1977-08-18 1979-03-07 International Business Machines Corporation Résistance semiconductrice intégrée à compensation de température
FR2415878A1 (fr) * 1978-01-25 1979-08-24 Western Electric Co Resistance en circuit integre a haute stabilite
FR2452180A1 (fr) * 1979-03-19 1980-10-17 Trw Inc Resistance a semi-conducteur, son procede de fabrication et convertisseur numerique/analogique monolithique
EP0017919A1 (fr) * 1979-04-16 1980-10-29 Fujitsu Limited Résistance diffusée
EP0109996A1 (fr) * 1982-11-26 1984-06-13 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
EP0139027A1 (fr) * 1983-10-19 1985-05-02 Deutsche ITT Industries GmbH Circuit monolithique intégré comportant au moins une résistance intégrée
EP0285440A2 (fr) * 1987-03-31 1988-10-05 Kabushiki Kaisha Toshiba Circuit de résistances diffusées

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516489A (en) * 1978-07-24 1980-02-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor resistance device
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
JPH0423355A (ja) * 1990-05-15 1992-01-27 Hitachi Ltd 半導体装置
DE4329639A1 (de) * 1993-09-02 1995-03-09 Telefunken Microelectron Schaltungsanordnung mit gesteuerten Pinch-Widerständen
DE10135169B4 (de) * 2001-07-19 2004-02-19 Robert Bosch Gmbh Widerstandsanordnung und Strommesser
US8384157B2 (en) 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
JP2012109535A (ja) 2010-10-20 2012-06-07 Asahi Kasei Electronics Co Ltd 抵抗素子及び反転バッファ回路
JP6269936B2 (ja) * 2013-12-26 2018-01-31 横河電機株式会社 集積回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
JPS515759A (ja) * 1974-07-03 1976-01-17 Hitachi Ltd Sokoki
JPS515277A (fr) * 1974-07-04 1976-01-16 Tatsuo Okazaki
DE2435606C3 (de) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000863A1 (fr) * 1977-08-18 1979-03-07 International Business Machines Corporation Résistance semiconductrice intégrée à compensation de température
FR2415878A1 (fr) * 1978-01-25 1979-08-24 Western Electric Co Resistance en circuit integre a haute stabilite
FR2452180A1 (fr) * 1979-03-19 1980-10-17 Trw Inc Resistance a semi-conducteur, son procede de fabrication et convertisseur numerique/analogique monolithique
EP0017919A1 (fr) * 1979-04-16 1980-10-29 Fujitsu Limited Résistance diffusée
EP0109996A1 (fr) * 1982-11-26 1984-06-13 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
EP0139027A1 (fr) * 1983-10-19 1985-05-02 Deutsche ITT Industries GmbH Circuit monolithique intégré comportant au moins une résistance intégrée
EP0285440A2 (fr) * 1987-03-31 1988-10-05 Kabushiki Kaisha Toshiba Circuit de résistances diffusées
EP0285440A3 (fr) * 1987-03-31 1990-12-12 Kabushiki Kaisha Toshiba Circuit de résistances diffusées
US5111068A (en) * 1987-03-31 1992-05-05 Kabushiki Kaisha Toshiba Diffusion resistor circuit

Also Published As

Publication number Publication date
DE2720653C2 (fr) 1989-03-16
FR2351505B1 (fr) 1979-10-12
GB1517266A (en) 1978-07-12
JPS52137988A (en) 1977-11-17
JPS575059B2 (fr) 1982-01-28
DE2720653A1 (de) 1977-12-01
IT1115304B (it) 1986-02-03

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Legal Events

Date Code Title Description
ST Notification of lapse