GB1517266A - Method of compensating for the voltage coefficient of ion-implanted or diffused resistors - Google Patents

Method of compensating for the voltage coefficient of ion-implanted or diffused resistors

Info

Publication number
GB1517266A
GB1517266A GB1702477A GB1702477A GB1517266A GB 1517266 A GB1517266 A GB 1517266A GB 1702477 A GB1702477 A GB 1702477A GB 1702477 A GB1702477 A GB 1702477A GB 1517266 A GB1517266 A GB 1517266A
Authority
GB
United Kingdom
Prior art keywords
region
resistor
terminal
isolated
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1702477A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1517266A publication Critical patent/GB1517266A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

1517266 Semiconductor resistors INTERNATIONAL BUSINESS MACHINES CORP 25 April 1977 [13 May 1976] 17024/77 Heading H1K [Also in Division H3] In a method for reducing the voltagecoefficient of resistance (VCR) of an ionimplanted or diffused resistor region 14 provided in an isolated epitaxial region 12 of a conductivity type different from that of the resistor region, the isolated region is connected to a potential which is a predetermined function of a potential applied to one terminal of the resistor region. Preferably, the isolated region is at a potential of where V 1 , V 2 are potentials applied to respective resistor terminals 17, 18 and V 0 is the reverse bias potential across PN junctions 20, 20<SP>1</SP>. In one example, Fig. 3B (not shown) terminal 19 of the isolated region is directly connected to one of the terminals 17, 18, whereas in the example of Fig. 3D (not shown) the resistor region is provided with a centre tapping connected to the terminal 19. Another VCR reducing arrangement includes a resistor (22), Fig. 2 (not shown) in another isolated region, provided with a centre-tapping connected to the terminal 19. A digital-to-analog converter circuit and an operational amplified circuit are discolosed, which utilize the above mentioned VCR reducing arrangements.
GB1702477A 1976-05-13 1977-04-25 Method of compensating for the voltage coefficient of ion-implanted or diffused resistors Expired GB1517266A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615001A FR2351505A1 (en) 1976-05-13 1976-05-13 PROCEDURE FOR CORRECTING THE TENSION COEFFICIENT OF SEMICONDUCTOR, IMPLANTED OR DIFFUSED RESISTORS

Publications (1)

Publication Number Publication Date
GB1517266A true GB1517266A (en) 1978-07-12

Family

ID=9173307

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1702477A Expired GB1517266A (en) 1976-05-13 1977-04-25 Method of compensating for the voltage coefficient of ion-implanted or diffused resistors

Country Status (5)

Country Link
JP (1) JPS52137988A (en)
DE (1) DE2720653A1 (en)
FR (1) FR2351505A1 (en)
GB (1) GB1517266A (en)
IT (1) IT1115304B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017919A1 (en) * 1979-04-16 1980-10-29 Fujitsu Limited Diffused resistor
US4466013A (en) * 1982-08-25 1984-08-14 U.S. Philips Corporation Tapped integrated resistor
US5111068A (en) * 1987-03-31 1992-05-05 Kabushiki Kaisha Toshiba Diffusion resistor circuit
US8384157B2 (en) 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
US8723294B2 (en) 2010-10-20 2014-05-13 Asahi Kasei Microdevices Corporation Resistance element and inverting buffer circuit

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229753A (en) * 1977-08-18 1980-10-21 International Business Machines Corporation Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor
SE7900379L (en) * 1978-01-25 1979-07-26 Western Electric Co SEMICONDUCTOR-INTEGRATED CIRCUIT
JPS5516489A (en) * 1978-07-24 1980-02-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor resistance device
DE3009042A1 (en) * 1979-03-19 1980-10-02 Trw Inc SEMICONDUCTOR RESISTANCE
EP0109996B1 (en) * 1982-11-26 1987-06-03 International Business Machines Corporation Self-biased resistor structure and application to interface circuits realization
EP0139027B1 (en) * 1983-10-19 1988-03-16 Deutsche ITT Industries GmbH Monolithic integrated circuit with at least one integrated resistor
JPH0423355A (en) * 1990-05-15 1992-01-27 Hitachi Ltd Semiconductor device
DE4329639A1 (en) * 1993-09-02 1995-03-09 Telefunken Microelectron Circuit arrangement with controlled pinch resistors
DE10135169B4 (en) * 2001-07-19 2004-02-19 Robert Bosch Gmbh Resistor arrangement and ammeter
JP6269936B2 (en) * 2013-12-26 2018-01-31 横河電機株式会社 Integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
JPS515759A (en) * 1974-07-03 1976-01-17 Hitachi Ltd SOKOKI
JPS515277A (en) * 1974-07-04 1976-01-16 Tatsuo Okazaki
DE2435606C3 (en) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Series connection of field effect transistors for the realization of a high-ohmic linear resistance

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0017919A1 (en) * 1979-04-16 1980-10-29 Fujitsu Limited Diffused resistor
US4466013A (en) * 1982-08-25 1984-08-14 U.S. Philips Corporation Tapped integrated resistor
US5111068A (en) * 1987-03-31 1992-05-05 Kabushiki Kaisha Toshiba Diffusion resistor circuit
US8384157B2 (en) 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
US8723294B2 (en) 2010-10-20 2014-05-13 Asahi Kasei Microdevices Corporation Resistance element and inverting buffer circuit

Also Published As

Publication number Publication date
FR2351505A1 (en) 1977-12-09
DE2720653C2 (en) 1989-03-16
FR2351505B1 (en) 1979-10-12
JPS52137988A (en) 1977-11-17
DE2720653A1 (en) 1977-12-01
JPS575059B2 (en) 1982-01-28
IT1115304B (en) 1986-02-03

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930425