FR2417854A1 - Transistor comportant une zone resistive integree dans sa region d'emetteur - Google Patents

Transistor comportant une zone resistive integree dans sa region d'emetteur

Info

Publication number
FR2417854A1
FR2417854A1 FR7804856A FR7804856A FR2417854A1 FR 2417854 A1 FR2417854 A1 FR 2417854A1 FR 7804856 A FR7804856 A FR 7804856A FR 7804856 A FR7804856 A FR 7804856A FR 2417854 A1 FR2417854 A1 FR 2417854A1
Authority
FR
France
Prior art keywords
transistor
resistive zone
integrated resistive
issuing region
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804856A
Other languages
English (en)
Other versions
FR2417854B1 (fr
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7804856A priority Critical patent/FR2417854A1/fr
Priority to US06/012,188 priority patent/US4258380A/en
Priority to GB7905531A priority patent/GB2015248B/en
Priority to DE19792906122 priority patent/DE2906122A1/de
Priority to JP1898379A priority patent/JPS54122981A/ja
Publication of FR2417854A1 publication Critical patent/FR2417854A1/fr
Application granted granted Critical
Publication of FR2417854B1 publication Critical patent/FR2417854B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

Transistor comportant une zone résistive dessinant une figure fermée, intégrée dans sa région d'émetteur. La zone résistive a une profondeur telle qu'elle partage la région d'émetteur en deux sous-régions. Application, notamment, aux transistors de puissance.
FR7804856A 1978-02-21 1978-02-21 Transistor comportant une zone resistive integree dans sa region d'emetteur Granted FR2417854A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7804856A FR2417854A1 (fr) 1978-02-21 1978-02-21 Transistor comportant une zone resistive integree dans sa region d'emetteur
US06/012,188 US4258380A (en) 1978-02-21 1979-02-14 Bipolar transistor having an integrated resistive emitter zone
GB7905531A GB2015248B (en) 1978-02-21 1979-02-16 Transistor emitter with a resistive zone
DE19792906122 DE2906122A1 (de) 1978-02-21 1979-02-17 Transistor mit einer in seinem emittergebiet integrierten widerstandszone
JP1898379A JPS54122981A (en) 1978-02-21 1979-02-20 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7804856A FR2417854A1 (fr) 1978-02-21 1978-02-21 Transistor comportant une zone resistive integree dans sa region d'emetteur

Publications (2)

Publication Number Publication Date
FR2417854A1 true FR2417854A1 (fr) 1979-09-14
FR2417854B1 FR2417854B1 (fr) 1982-03-05

Family

ID=9204824

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804856A Granted FR2417854A1 (fr) 1978-02-21 1978-02-21 Transistor comportant une zone resistive integree dans sa region d'emetteur

Country Status (5)

Country Link
US (1) US4258380A (fr)
JP (1) JPS54122981A (fr)
DE (1) DE2906122A1 (fr)
FR (1) FR2417854A1 (fr)
GB (1) GB2015248B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064614A2 (fr) * 1981-04-30 1982-11-17 Kabushiki Kaisha Toshiba Structure d'émetteur pour dispositifs semiconducteurs
EP0141892A2 (fr) * 1983-11-15 1985-05-22 Refining Energy Services, Inc. Dispositif semi-conducteur à effet de recombination de surface

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494041B1 (fr) * 1980-11-07 1987-01-23 Radiotechnique Compelec Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element
US4467312A (en) * 1980-12-23 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor resistor device
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
DE3274699D1 (en) * 1982-09-20 1987-01-22 Itt Ind Gmbh Deutsche Method of making a monolithic integrated circuit with at least one bipolar planar transistor
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
JPH0262048A (ja) * 1988-08-27 1990-03-01 Fuji Electric Co Ltd トランジスタ
JP2003501826A (ja) * 1999-06-09 2003-01-14 インターナショナル・レクチファイヤー・コーポレーション 高電圧縦伝導型パワーｍｏｓｆｅｔデバイスの２層エピタキシャル層
CN109037314B (zh) * 2018-08-15 2023-07-04 深圳市金誉半导体有限公司 一种晶体管及其制作方法
CN114005901A (zh) * 2021-11-02 2022-02-01 扬州乾照光电有限公司 一种多结太阳电池及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1519530A (fr) * 1965-03-17 1968-04-05 Rca Corp Dispositif semi-conducteur
DE1514875A1 (de) * 1965-09-18 1969-11-06 Telefunken Patent Halbleiteranordnung
DE1614877A1 (de) * 1967-10-19 1970-12-23 Telefunken Patent Verfahren zum Herstellen eines Transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427511A (en) * 1965-03-17 1969-02-11 Rca Corp High frequency transistor structure with two-conductivity emitters

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1519530A (fr) * 1965-03-17 1968-04-05 Rca Corp Dispositif semi-conducteur
DE1514875A1 (de) * 1965-09-18 1969-11-06 Telefunken Patent Halbleiteranordnung
DE1614877A1 (de) * 1967-10-19 1970-12-23 Telefunken Patent Verfahren zum Herstellen eines Transistors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064614A2 (fr) * 1981-04-30 1982-11-17 Kabushiki Kaisha Toshiba Structure d'émetteur pour dispositifs semiconducteurs
EP0064614A3 (en) * 1981-04-30 1984-11-07 Kabushiki Kaisha Toshiba Improved emitter structure for semiconductor devices
EP0141892A2 (fr) * 1983-11-15 1985-05-22 Refining Energy Services, Inc. Dispositif semi-conducteur à effet de recombination de surface
EP0141892A3 (fr) * 1983-11-15 1987-10-28 Refining Energy Services, Inc. Dispositif semi-conducteur à effet de recombination de surface

Also Published As

Publication number Publication date
JPS54122981A (en) 1979-09-22
GB2015248A (en) 1979-09-05
FR2417854B1 (fr) 1982-03-05
GB2015248B (en) 1982-06-09
US4258380A (en) 1981-03-24
DE2906122A1 (de) 1979-08-30

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Legal Events

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CD Change of name or company name
ST Notification of lapse