FR2494041B1 - Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element - Google Patents
Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit elementInfo
- Publication number
- FR2494041B1 FR2494041B1 FR8023825A FR8023825A FR2494041B1 FR 2494041 B1 FR2494041 B1 FR 2494041B1 FR 8023825 A FR8023825 A FR 8023825A FR 8023825 A FR8023825 A FR 8023825A FR 2494041 B1 FR2494041 B1 FR 2494041B1
- Authority
- FR
- France
- Prior art keywords
- memory
- manufacturing
- integrated circuit
- same
- circuit element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8023825A FR2494041B1 (fr) | 1980-11-07 | 1980-11-07 | Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element |
DE3142618A DE3142618C2 (de) | 1980-11-07 | 1981-10-28 | Halbleiteranordnung mit Transistor und Widerstandszone |
US06/315,691 US4463370A (en) | 1980-11-07 | 1981-10-28 | Semiconductor device for use in memory cells |
NLAANVRAGE8104961,A NL186415C (nl) | 1980-11-07 | 1981-11-03 | Halfgeleiderinrichting. |
GB8133263A GB2087149B (en) | 1980-11-07 | 1981-11-04 | Semiconductor integrated circuit and its manufacture |
IE2582/81A IE52757B1 (en) | 1980-11-07 | 1981-11-04 | Semiconductor device and its manufacture |
JP56177006A JPS57109369A (en) | 1980-11-07 | 1981-11-04 | Semiconductor device and method of producing same |
IT24861/81A IT1140049B (it) | 1980-11-07 | 1981-11-04 | Dispositivo semiconduttore e metodo di fabbricazione dello stesso |
CA000389482A CA1171552A (fr) | 1980-11-07 | 1981-11-05 | Semiconducteur, et methode de production connexe |
JP1985099141U JPS6117755U (ja) | 1980-11-07 | 1985-07-01 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8023825A FR2494041B1 (fr) | 1980-11-07 | 1980-11-07 | Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2494041A1 FR2494041A1 (fr) | 1982-05-14 |
FR2494041B1 true FR2494041B1 (fr) | 1987-01-23 |
Family
ID=9247788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8023825A Expired FR2494041B1 (fr) | 1980-11-07 | 1980-11-07 | Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element |
Country Status (9)
Country | Link |
---|---|
US (1) | US4463370A (fr) |
JP (2) | JPS57109369A (fr) |
CA (1) | CA1171552A (fr) |
DE (1) | DE3142618C2 (fr) |
FR (1) | FR2494041B1 (fr) |
GB (1) | GB2087149B (fr) |
IE (1) | IE52757B1 (fr) |
IT (1) | IT1140049B (fr) |
NL (1) | NL186415C (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
KR100331296B1 (ko) * | 1995-12-20 | 2002-06-20 | 클라크 3세 존 엠. | 에피택셜 핀치 저항기 및 그 형성 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4005453A (en) * | 1971-04-14 | 1977-01-25 | U.S. Philips Corporation | Semiconductor device with isolated circuit elements and method of making |
DE2137976C3 (de) * | 1971-07-29 | 1978-08-31 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithischer Speicher und Verfahren zur Herstellung |
US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
JPS5379331A (en) * | 1976-12-24 | 1978-07-13 | Hitachi Ltd | Semiconductor memory cell |
JPS5397343A (en) * | 1977-02-07 | 1978-08-25 | Hitachi Ltd | Semiconductor memory cell |
FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
FR2417854A1 (fr) * | 1978-02-21 | 1979-09-14 | Radiotechnique Compelec | Transistor comportant une zone resistive integree dans sa region d'emetteur |
US4246593A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell with polysilicon resistors |
US4246592A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell |
US4292730A (en) * | 1980-03-12 | 1981-10-06 | Harris Corporation | Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization |
-
1980
- 1980-11-07 FR FR8023825A patent/FR2494041B1/fr not_active Expired
-
1981
- 1981-10-28 DE DE3142618A patent/DE3142618C2/de not_active Expired
- 1981-10-28 US US06/315,691 patent/US4463370A/en not_active Expired - Fee Related
- 1981-11-03 NL NLAANVRAGE8104961,A patent/NL186415C/xx not_active IP Right Cessation
- 1981-11-04 GB GB8133263A patent/GB2087149B/en not_active Expired
- 1981-11-04 IE IE2582/81A patent/IE52757B1/en not_active IP Right Cessation
- 1981-11-04 JP JP56177006A patent/JPS57109369A/ja active Pending
- 1981-11-04 IT IT24861/81A patent/IT1140049B/it active
- 1981-11-05 CA CA000389482A patent/CA1171552A/fr not_active Expired
-
1985
- 1985-07-01 JP JP1985099141U patent/JPS6117755U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3142618A1 (de) | 1982-07-01 |
CA1171552A (fr) | 1984-07-24 |
DE3142618C2 (de) | 1986-01-16 |
FR2494041A1 (fr) | 1982-05-14 |
NL186415C (nl) | 1990-11-16 |
JPS6117755U (ja) | 1986-02-01 |
IT1140049B (it) | 1986-09-24 |
GB2087149A (en) | 1982-05-19 |
US4463370A (en) | 1984-07-31 |
IE52757B1 (en) | 1988-02-17 |
JPS57109369A (en) | 1982-07-07 |
NL8104961A (nl) | 1982-06-01 |
NL186415B (nl) | 1990-06-18 |
GB2087149B (en) | 1984-07-18 |
IE812582L (en) | 1982-05-07 |
IT8124861A0 (it) | 1981-11-04 |
JPH0310681Y2 (fr) | 1991-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |