IT8124861A0 - Dispositivo semiconduttore e metodo di fabbricazione dello stesso. - Google Patents

Dispositivo semiconduttore e metodo di fabbricazione dello stesso.

Info

Publication number
IT8124861A0
IT8124861A0 IT8124861A IT2486181A IT8124861A0 IT 8124861 A0 IT8124861 A0 IT 8124861A0 IT 8124861 A IT8124861 A IT 8124861A IT 2486181 A IT2486181 A IT 2486181A IT 8124861 A0 IT8124861 A0 IT 8124861A0
Authority
IT
Italy
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Application number
IT8124861A
Other languages
English (en)
Other versions
IT1140049B (it
Inventor
Didier Jean Raymond Grenier
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8124861A0 publication Critical patent/IT8124861A0/it
Application granted granted Critical
Publication of IT1140049B publication Critical patent/IT1140049B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
IT24861/81A 1980-11-07 1981-11-04 Dispositivo semiconduttore e metodo di fabbricazione dello stesso IT1140049B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8023825A FR2494041B1 (fr) 1980-11-07 1980-11-07 Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element

Publications (2)

Publication Number Publication Date
IT8124861A0 true IT8124861A0 (it) 1981-11-04
IT1140049B IT1140049B (it) 1986-09-24

Family

ID=9247788

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24861/81A IT1140049B (it) 1980-11-07 1981-11-04 Dispositivo semiconduttore e metodo di fabbricazione dello stesso

Country Status (9)

Country Link
US (1) US4463370A (it)
JP (2) JPS57109369A (it)
CA (1) CA1171552A (it)
DE (1) DE3142618C2 (it)
FR (1) FR2494041B1 (it)
GB (1) GB2087149B (it)
IE (1) IE52757B1 (it)
IT (1) IT1140049B (it)
NL (1) NL186415C (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
KR100331296B1 (ko) * 1995-12-20 2002-06-20 클라크 3세 존 엠. 에피택셜 핀치 저항기 및 그 형성 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
DE2137976C3 (de) * 1971-07-29 1978-08-31 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithischer Speicher und Verfahren zur Herstellung
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
JPS5379331A (en) * 1976-12-24 1978-07-13 Hitachi Ltd Semiconductor memory cell
JPS5397343A (en) * 1977-02-07 1978-08-25 Hitachi Ltd Semiconductor memory cell
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
FR2417854A1 (fr) * 1978-02-21 1979-09-14 Radiotechnique Compelec Transistor comportant une zone resistive integree dans sa region d'emetteur
US4246593A (en) * 1979-01-02 1981-01-20 Texas Instruments Incorporated High density static memory cell with polysilicon resistors
US4246592A (en) * 1979-01-02 1981-01-20 Texas Instruments Incorporated High density static memory cell
US4292730A (en) * 1980-03-12 1981-10-06 Harris Corporation Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization

Also Published As

Publication number Publication date
GB2087149A (en) 1982-05-19
JPH0310681Y2 (it) 1991-03-15
IT1140049B (it) 1986-09-24
IE52757B1 (en) 1988-02-17
JPS57109369A (en) 1982-07-07
US4463370A (en) 1984-07-31
JPS6117755U (ja) 1986-02-01
FR2494041B1 (fr) 1987-01-23
GB2087149B (en) 1984-07-18
CA1171552A (en) 1984-07-24
IE812582L (en) 1982-05-07
NL186415B (nl) 1990-06-18
DE3142618C2 (de) 1986-01-16
DE3142618A1 (de) 1982-07-01
NL8104961A (nl) 1982-06-01
NL186415C (nl) 1990-11-16
FR2494041A1 (fr) 1982-05-14

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