IT7829725A0 - Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dello stesso. - Google Patents
Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dello stesso.Info
- Publication number
- IT7829725A0 IT7829725A0 IT7829725A IT2972578A IT7829725A0 IT 7829725 A0 IT7829725 A0 IT 7829725A0 IT 7829725 A IT7829725 A IT 7829725A IT 2972578 A IT2972578 A IT 2972578A IT 7829725 A0 IT7829725 A0 IT 7829725A0
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductor device
- device including
- monolithic semiconductor
- complementary transistors
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7734126A FR2408914A1 (fr) | 1977-11-14 | 1977-11-14 | Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7829725A0 true IT7829725A0 (it) | 1978-11-13 |
| IT1100277B IT1100277B (it) | 1985-09-28 |
Family
ID=9197557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT29725/78A IT1100277B (it) | 1977-11-14 | 1978-11-13 | Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dell stesso |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US4261002A (it) |
| EP (1) | EP0002087B1 (it) |
| JP (1) | JPS5931218B2 (it) |
| AU (1) | AU522401B2 (it) |
| DE (1) | DE2860912D1 (it) |
| ES (1) | ES475032A1 (it) |
| FR (1) | FR2408914A1 (it) |
| IT (1) | IT1100277B (it) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2445626A1 (fr) * | 1978-12-29 | 1980-07-25 | Radiotechnique Compelec | Transistor pour circuit integre |
| JPS60231356A (ja) * | 1984-04-28 | 1985-11-16 | Mitsubishi Electric Corp | 相補形金属酸化膜半導体集積回路装置 |
| IT1214806B (it) * | 1984-09-21 | 1990-01-18 | Ates Componenti Elettron | Dispositivo integrato monolitico di potenza e semiconduttore |
| IT1204522B (it) * | 1987-04-14 | 1989-03-03 | Sgs Microelettronica Spa | Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici |
| JP3186096B2 (ja) * | 1990-06-14 | 2001-07-11 | アジレント・テクノロジーズ・インク | 感光素子アレイの製造方法 |
| US5268589A (en) * | 1990-09-28 | 1993-12-07 | Siemens Aktiengesellschaft | Semiconductor chip having at least one electrical resistor means |
| US5625209A (en) * | 1992-08-26 | 1997-04-29 | Texas Instruments Incorporated | Silicon based sensor apparatus |
| US5447871A (en) * | 1993-03-05 | 1995-09-05 | Goldstein; Edward F. | Electrically conductive interconnection through a body of semiconductor material |
| JP3386943B2 (ja) * | 1995-10-30 | 2003-03-17 | 三菱電機株式会社 | 半導体装置 |
| WO2004079789A2 (en) * | 2003-03-05 | 2004-09-16 | Rensselaer Polytechnic Institute | Interstage isolation in darlington transistors |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3412295A (en) * | 1965-10-19 | 1968-11-19 | Sprague Electric Co | Monolithic structure with three-region complementary transistors |
| US3449643A (en) * | 1966-09-09 | 1969-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
| US3930909A (en) * | 1966-10-21 | 1976-01-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth |
| US3911269A (en) * | 1971-03-20 | 1975-10-07 | Philips Corp | Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement |
| US3909318A (en) * | 1971-04-14 | 1975-09-30 | Philips Corp | Method of forming complementary devices utilizing outdiffusion and selective oxidation |
| NL166156C (nl) * | 1971-05-22 | 1981-06-15 | Philips Nv | Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan. |
| NL7107040A (it) * | 1971-05-22 | 1972-11-24 | ||
| FR2216678B1 (it) * | 1973-02-02 | 1977-08-19 | Radiotechnique Compelec | |
| FR2216677B1 (it) * | 1973-02-02 | 1977-08-26 | Radiotechnique Compelec | |
| FR2297495A1 (fr) * | 1975-01-10 | 1976-08-06 | Radiotechnique Compelec | Structure de transistors complementaires et son procede de fabrication |
| US3998674A (en) * | 1975-11-24 | 1976-12-21 | International Business Machines Corporation | Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching |
| US4021269A (en) * | 1975-11-26 | 1977-05-03 | General Electric Company | Post diffusion after temperature gradient zone melting |
| US3998662A (en) * | 1975-12-31 | 1976-12-21 | General Electric Company | Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface |
| JPS52149666U (it) * | 1976-05-11 | 1977-11-12 | ||
| FR2376515A1 (fr) * | 1976-12-29 | 1978-07-28 | Radiotechnique Compelec | Ensemble monolithique de deux transistors complementaires |
-
1977
- 1977-11-14 FR FR7734126A patent/FR2408914A1/fr active Granted
-
1978
- 1978-11-13 AU AU41547/78A patent/AU522401B2/en not_active Expired
- 1978-11-13 JP JP53139761A patent/JPS5931218B2/ja not_active Expired
- 1978-11-13 IT IT29725/78A patent/IT1100277B/it active
- 1978-11-13 ES ES475032A patent/ES475032A1/es not_active Expired
- 1978-11-13 US US05/960,426 patent/US4261002A/en not_active Expired - Lifetime
- 1978-11-13 EP EP78200298A patent/EP0002087B1/fr not_active Expired
- 1978-11-13 DE DE7878200298T patent/DE2860912D1/de not_active Expired
-
1980
- 1980-10-27 US US06/200,645 patent/US4370179A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4261002A (en) | 1981-04-07 |
| AU4154778A (en) | 1979-05-24 |
| JPS5478678A (en) | 1979-06-22 |
| EP0002087A1 (fr) | 1979-05-30 |
| ES475032A1 (es) | 1979-04-16 |
| AU522401B2 (en) | 1982-06-03 |
| IT1100277B (it) | 1985-09-28 |
| JPS5931218B2 (ja) | 1984-07-31 |
| FR2408914A1 (fr) | 1979-06-08 |
| US4370179A (en) | 1983-01-25 |
| EP0002087B1 (fr) | 1981-08-05 |
| FR2408914B1 (it) | 1982-02-26 |
| DE2860912D1 (en) | 1981-11-05 |
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