PL204820A1 - Element polprzewodnikowy oraz sposob wytwarzania elementu polprzewodnikowego - Google Patents
Element polprzewodnikowy oraz sposob wytwarzania elementu polprzewodnikowegoInfo
- Publication number
- PL204820A1 PL204820A1 PL20482078A PL20482078A PL204820A1 PL 204820 A1 PL204820 A1 PL 204820A1 PL 20482078 A PL20482078 A PL 20482078A PL 20482078 A PL20482078 A PL 20482078A PL 204820 A1 PL204820 A1 PL 204820A1
- Authority
- PL
- Poland
- Prior art keywords
- socconductor
- manufacturing
- semiconductor element
- semiconductor
- socconductor element
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77168177A | 1977-02-24 | 1977-02-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
PL204820A1 true PL204820A1 (pl) | 1978-11-06 |
PL116754B1 PL116754B1 (en) | 1981-06-30 |
Family
ID=25092625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL1978204820A PL116754B1 (en) | 1977-02-24 | 1978-02-22 | Semiconductor element and a method of manufacturing thesame |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS53105978A (pl) |
BE (1) | BE864270A (pl) |
DE (1) | DE2806493A1 (pl) |
FR (1) | FR2382094B1 (pl) |
GB (1) | GB1552759A (pl) |
IN (1) | IN147572B (pl) |
IT (1) | IT1091594B (pl) |
PL (1) | PL116754B1 (pl) |
SE (1) | SE7801091L (pl) |
YU (1) | YU14978A (pl) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6312166U (pl) * | 1986-07-08 | 1988-01-26 | ||
CA1339817C (en) * | 1989-05-31 | 1998-04-14 | Mitel Corporation | Curing and passivation of spin-on-glasses by a plasma process, and product produced thereby |
JPH0316373U (pl) * | 1989-06-28 | 1991-02-19 | ||
RU2534563C2 (ru) * | 2013-01-09 | 2014-11-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ нанесения стекла |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1274736C2 (de) * | 1964-12-03 | 1974-02-07 | Verfahren zur herstellung einer halbleitervorrichtung | |
GB1250099A (pl) * | 1969-04-14 | 1971-10-20 | ||
JPS532552B2 (pl) * | 1974-03-30 | 1978-01-28 | ||
US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
NL7500492A (nl) * | 1975-01-16 | 1976-07-20 | Philips Nv | Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze. |
US4007476A (en) * | 1975-04-21 | 1977-02-08 | Hutson Jearld L | Technique for passivating semiconductor devices |
-
1978
- 1978-01-02 IN IN2/CAL/78A patent/IN147572B/en unknown
- 1978-01-04 IT IT19030/78A patent/IT1091594B/it active
- 1978-01-23 YU YU00149/78A patent/YU14978A/xx unknown
- 1978-01-30 SE SE7801091A patent/SE7801091L/xx unknown
- 1978-02-16 DE DE19782806493 patent/DE2806493A1/de not_active Ceased
- 1978-02-16 GB GB6178/78A patent/GB1552759A/en not_active Expired
- 1978-02-17 FR FR7804586A patent/FR2382094B1/fr not_active Expired
- 1978-02-21 JP JP1960078A patent/JPS53105978A/ja active Granted
- 1978-02-22 PL PL1978204820A patent/PL116754B1/pl unknown
- 1978-02-23 BE BE185438A patent/BE864270A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2806493A1 (de) | 1978-08-31 |
GB1552759A (en) | 1979-09-19 |
JPS53105978A (en) | 1978-09-14 |
SE7801091L (sv) | 1978-08-25 |
BE864270A (fr) | 1978-06-16 |
FR2382094A1 (fr) | 1978-09-22 |
YU14978A (en) | 1982-10-31 |
JPS5626980B2 (pl) | 1981-06-22 |
PL116754B1 (en) | 1981-06-30 |
IT7819030A0 (it) | 1978-01-04 |
IT1091594B (it) | 1985-07-06 |
FR2382094B1 (fr) | 1985-07-19 |
IN147572B (pl) | 1980-04-19 |
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