IT1100277B - Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dell stesso - Google Patents

Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dell stesso

Info

Publication number
IT1100277B
IT1100277B IT29725/78A IT2972578A IT1100277B IT 1100277 B IT1100277 B IT 1100277B IT 29725/78 A IT29725/78 A IT 29725/78A IT 2972578 A IT2972578 A IT 2972578A IT 1100277 B IT1100277 B IT 1100277B
Authority
IT
Italy
Prior art keywords
manufacturing
semiconductor device
device including
monolithic semiconductor
complementary transistors
Prior art date
Application number
IT29725/78A
Other languages
English (en)
Other versions
IT7829725A0 (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7829725A0 publication Critical patent/IT7829725A0/it
Application granted granted Critical
Publication of IT1100277B publication Critical patent/IT1100277B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0828—Combination of direct and inverse vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT29725/78A 1977-11-14 1978-11-13 Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dell stesso IT1100277B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7734126A FR2408914A1 (fr) 1977-11-14 1977-11-14 Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication

Publications (2)

Publication Number Publication Date
IT7829725A0 IT7829725A0 (it) 1978-11-13
IT1100277B true IT1100277B (it) 1985-09-28

Family

ID=9197557

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29725/78A IT1100277B (it) 1977-11-14 1978-11-13 Dispositivo semiconduttore monolitico comprendente due transistori complementari e metodo di fabbricazione dell stesso

Country Status (8)

Country Link
US (2) US4261002A (it)
EP (1) EP0002087B1 (it)
JP (1) JPS5931218B2 (it)
AU (1) AU522401B2 (it)
DE (1) DE2860912D1 (it)
ES (1) ES475032A1 (it)
FR (1) FR2408914A1 (it)
IT (1) IT1100277B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445626A1 (fr) * 1978-12-29 1980-07-25 Radiotechnique Compelec Transistor pour circuit integre
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
IT1204522B (it) * 1987-04-14 1989-03-03 Sgs Microelettronica Spa Circuito integrato monolitico di potenza in configurazione a semiponte,particolarmente per il pilotaggio di motori elettrici
JP3186096B2 (ja) * 1990-06-14 2001-07-11 アジレント・テクノロジーズ・インク 感光素子アレイの製造方法
US5268589A (en) * 1990-09-28 1993-12-07 Siemens Aktiengesellschaft Semiconductor chip having at least one electrical resistor means
US5625209A (en) * 1992-08-26 1997-04-29 Texas Instruments Incorporated Silicon based sensor apparatus
US5447871A (en) * 1993-03-05 1995-09-05 Goldstein; Edward F. Electrically conductive interconnection through a body of semiconductor material
JP3386943B2 (ja) * 1995-10-30 2003-03-17 三菱電機株式会社 半導体装置
WO2004079789A2 (en) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Interstage isolation in darlington transistors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412295A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with three-region complementary transistors
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US3911269A (en) * 1971-03-20 1975-10-07 Philips Corp Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement
US3909318A (en) * 1971-04-14 1975-09-30 Philips Corp Method of forming complementary devices utilizing outdiffusion and selective oxidation
NL7107040A (it) * 1971-05-22 1972-11-24
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
FR2216678B1 (it) * 1973-02-02 1977-08-19 Radiotechnique Compelec
FR2216677B1 (it) * 1973-02-02 1977-08-26 Radiotechnique Compelec
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
JPS52149666U (it) * 1976-05-11 1977-11-12
FR2376515A1 (fr) * 1976-12-29 1978-07-28 Radiotechnique Compelec Ensemble monolithique de deux transistors complementaires

Also Published As

Publication number Publication date
FR2408914A1 (fr) 1979-06-08
FR2408914B1 (it) 1982-02-26
JPS5478678A (en) 1979-06-22
IT7829725A0 (it) 1978-11-13
DE2860912D1 (en) 1981-11-05
ES475032A1 (es) 1979-04-16
AU4154778A (en) 1979-05-24
US4370179A (en) 1983-01-25
US4261002A (en) 1981-04-07
JPS5931218B2 (ja) 1984-07-31
EP0002087B1 (fr) 1981-08-05
EP0002087A1 (fr) 1979-05-30
AU522401B2 (en) 1982-06-03

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