DE3325134C2 - - Google Patents
Info
- Publication number
- DE3325134C2 DE3325134C2 DE3325134A DE3325134A DE3325134C2 DE 3325134 C2 DE3325134 C2 DE 3325134C2 DE 3325134 A DE3325134 A DE 3325134A DE 3325134 A DE3325134 A DE 3325134A DE 3325134 C2 DE3325134 C2 DE 3325134C2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- gate
- layer
- substrate
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 claims description 61
- 239000004973 liquid crystal related substance Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 239000010409 thin film Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 34
- 210000002858 crystal cell Anatomy 0.000 description 24
- 238000009413 insulation Methods 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
- - Aufbringen einer undurchsichtigen Metallschicht auf einem transparenten Substrat,
- - Ausbilden einer Drain-Elektrode und einer Source-Elektrode für jedes Matrixelement durch Fotoätzen der Metallschicht,
- - Aufbringen einer amorphen oder polykristallinen Halbleiterschicht auf die Drain-Elektrode, die Source-Elektrode und die freigelegten Bereiche des Substrats,
- - Ausbilden jeweils eines Kanalbereichs durch Fotoätzen der Halbleiterschicht, wobei der Kanalbereich sich zwischen jeder Drain-Elektrode und jeder Source-Elektrode erstreckt,
- - Aufbringen einer Gate-Isolierschicht und
- - Ausbilden einer Gate-Elektrode auf der Gate-Isolierschicht,
- - die Gate-Isolierschicht, die Drain-Elektrode, die mit dieser zusammenhängenden Matrixelement-Elektrode, die Source-Elektrode, die freiliegenden Bereiche des Substrats und den Kanalbereich zusammenhängend ohne Unterbrechungen überdeckend aufgebracht wird und
- - die Gate-Elektrode in folgender Weise gebildet wird:
- - Aufbringen einer durchgehenden und transparenten Gate-Elektrodenschicht,
- - Aufbringen einer fotosensitiven Harzschicht auf die Gate-Elektroden-Schicht,
- - Bestrahlen der Harzschicht durch das Substrat und durch den Kanalbereich hindurch, wodurch das Harz im bestrahlten Bereich gehärtet wird,
- - Entwickeln der Harzschicht,
- - Ausbilden des durch die Drain-Elektrode und die Source-Elektrode maskierten Gate-Masken-Bereichs durch Entfernen der nicht belichteten Bereiche der Harzschicht,
- - Ausbilden der Gate-Elektrode durch Wegätzen der durch den Gate-Masken-Bereich der Harzschicht nicht maskierten Gate-Elektrodenschicht und
- - Entfernen des verbliebenen Gate-Masken- Bereichs der Harzschicht von der Gate-Elektrode.
Claims (5)
- a) Aufbringen einer undurchsichtigen Metallschicht auf einem transparenten Substrat (12)
- b) Ausbilden einer Drain-Elektrode (25) und einer Source-Elektrode (3) für jedes Matrixelement durch Fotoätzen der Metallschicht,
- c) Aufbringen einer amorphen oder polykristallinen Halbleiterschicht auf die Drain-Elektrode (25), die Source-Elektrode (3) und die freigelegten Bereiche des Substrats (12),
- d) Ausbilden jeweils eines Kanalbereichs (24) durch Fotoätzen der Halbleiterschicht, wobei der Kanalbereich (24) sich zwischen jeder Drain-Elektrode (25) und jeder Source-Elektrode (3) erstreckt,
- e) Aufbringen einer Gate-Isolierschicht (22) und
- f) Ausbilden einer Gate-Elektrode (5) auf der Gate-Isolierschicht (22),
- g) die Gate-Isolierschicht (22) gem. Schritt e) die Drain-Elektrode (25), die mit dieser zusammenhängenden Matrixelement-Elektrode (2), die Source-Elektrode (3), die freiliegenden Bereiche des Substrats (12) und den Kanalbereich (24) zusammenhängend ohne Unterbrechungen überdeckend aufgebracht wird und
- h) die Gate-Elektrode (5) gem. Schritt f) in folgender
Weise gebildet wird:
- h1) Aufbringen einer durchgehenden und transparenten Gate-Elektrodenschicht (5′),
- h2) Aufbringen einer fotosensitiven Harzschicht (37) auf die Gate-Elektroden-Schicht (5′),
- h3) Bestrahlen der Harzschicht (37) durch das Substrat (12) und durch den Kanalbereich (24) hindurch, wodurch das Harz im bestrahlten Bereich gehärtet wird,
- h4) Entwickeln der Harzschicht (37),
- h5) Ausbilden des durch die Drain-Elektrode (25) und die Source-Elektrode (3) maskierten Gate-Masken-Bereichs (37 P) durch Entfernen der nicht belichteten Bereiche der Harzschicht (37),
- h6) Ausbilden der Gate-Elektrode (5) durch Wegätzen der durch den Gate-Masken-Bereich (37 P) der Harzschicht (37) nicht maskierten Gate-Elektrodenschicht (5′) und
- h7) Entfernen des verbliebenen Gate-Masken- Bereichs (37 P) der Harzschicht von der Gate-Elektrode (5).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57120808A JPS5910988A (ja) | 1982-07-12 | 1982-07-12 | カラ−液晶表示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3325134A1 DE3325134A1 (de) | 1984-01-19 |
DE3325134C2 true DE3325134C2 (de) | 1989-04-27 |
Family
ID=14795483
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3348002A Expired DE3348002C2 (de) | 1982-07-12 | 1983-07-12 | |
DE19833325134 Granted DE3325134A1 (de) | 1982-07-12 | 1983-07-12 | Fluessigkristall-anzeigetafel mit punktmatrixaufbau |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3348002A Expired DE3348002C2 (de) | 1982-07-12 | 1983-07-12 |
Country Status (5)
Country | Link |
---|---|
US (3) | US4644338A (de) |
JP (1) | JPS5910988A (de) |
DE (2) | DE3348002C2 (de) |
FR (1) | FR2530057B1 (de) |
GB (2) | GB2126401B (de) |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58140781A (ja) * | 1982-02-17 | 1983-08-20 | 株式会社日立製作所 | 画像表示装置 |
US4770498A (en) * | 1982-07-12 | 1988-09-13 | Hosiden Electronics Co., Ltd. | Dot-matrix liquid crystal display |
JPS5961818A (ja) * | 1982-10-01 | 1984-04-09 | Seiko Epson Corp | 液晶表示装置 |
JPS6023834A (ja) * | 1983-07-19 | 1985-02-06 | Seiko Instr & Electronics Ltd | マトリクス型多色表示装置用基板の製造方法 |
US4678285A (en) * | 1984-01-13 | 1987-07-07 | Ricoh Company, Ltd. | Liquid crystal color display device |
US4613855A (en) * | 1984-03-05 | 1986-09-23 | Dale Electronics, Inc. | Direct current dot matrix plasma display having integrated drivers |
JPS60213062A (ja) * | 1984-04-09 | 1985-10-25 | Hosiden Electronics Co Ltd | 薄膜トランジスタの製造方法 |
JPH0697317B2 (ja) * | 1984-04-11 | 1994-11-30 | ホシデン株式会社 | 液晶表示器 |
JPS60218627A (ja) * | 1984-04-13 | 1985-11-01 | Sharp Corp | カラ−液晶表示装置 |
DE3514807C2 (de) * | 1984-04-25 | 1994-12-22 | Canon Kk | Vorrichtung mit einer Flüssigkristallzelle, zum Ansteuern einer Transistoranordnung |
JPS614020A (ja) * | 1984-06-18 | 1986-01-09 | Nissha Printing Co Ltd | マルチカラ−液晶表示装置 |
JPS6180226A (ja) * | 1984-09-28 | 1986-04-23 | Toshiba Corp | アクテイブ・マトリツクス駆動装置 |
US4744862A (en) * | 1984-10-01 | 1988-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods for nonlinear semiconductor element and liquid crystal display panel using the same |
JPS61102628A (ja) * | 1984-10-25 | 1986-05-21 | Sony Corp | 液晶表示装置 |
US4678282A (en) * | 1985-02-19 | 1987-07-07 | Ovonic Imaging Systems, Inc. | Active display matrix addressable without crossed lines on any one substrate and method of using the same |
CA1258312A (en) * | 1985-04-12 | 1989-08-08 | Kozo Katogi | Liquid crystal color display apparatus |
JPH0740101B2 (ja) * | 1985-04-23 | 1995-05-01 | 旭硝子株式会社 | 薄膜トランジスタ |
FR2581783B1 (fr) * | 1985-05-07 | 1989-05-12 | Commissariat Energie Atomique | Dispositif d'affichage a matrice active et a commande integree comprenant deux familles d'electrodes lignes et deux familles d'electrodes colonnes par point image et son procede de commande |
JPS61276922A (ja) * | 1985-05-30 | 1986-12-06 | Hitachi Metals Ltd | バ−ンクリ−ナチエンとその製造法 |
JPS6280626A (ja) * | 1985-10-04 | 1987-04-14 | Hosiden Electronics Co Ltd | 液晶表示素子 |
JPS62125329A (ja) * | 1985-11-27 | 1987-06-06 | Hosiden Electronics Co Ltd | 透過形表示装置 |
US4758896A (en) * | 1985-12-10 | 1988-07-19 | Citizen Watch Co., Ltd. | 3-Dimensional integrated circuit for liquid crystal display TV receiver |
US4731610A (en) * | 1986-01-21 | 1988-03-15 | Ovonic Imaging Systems, Inc. | Balanced drive electronic matrix system and method of operating the same |
US4728802A (en) * | 1986-01-21 | 1988-03-01 | Ovonic Imaging Systems, Inc. | Balanced drive photosensitive pixel and method of operating the same |
FR2593631B1 (fr) * | 1986-01-27 | 1989-02-17 | Maurice Francois | Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran |
DE3750870T2 (de) * | 1986-05-13 | 1995-06-29 | Sanyo Electric Co | Antriebsschaltung einer bildanzeigevorrichtung. |
JPS62285464A (ja) * | 1986-06-03 | 1987-12-11 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ基板及びその製造方法 |
JPH0766253B2 (ja) * | 1986-06-20 | 1995-07-19 | 松下電器産業株式会社 | マトリクス型画像表示装置 |
FR2601801B1 (fr) * | 1986-07-16 | 1988-09-16 | Morin Francois | Ecran d'affichage a matrice active utilisant du carbure de silicium amorphe hydrogene et procede de fabrication de cet ecran |
JPS63101829A (ja) * | 1986-10-17 | 1988-05-06 | Nec Corp | アクテイブ・マトリツクス液晶表示装置およびその製造方法 |
JPH0713715B2 (ja) * | 1987-01-22 | 1995-02-15 | ホシデン株式会社 | カラ−液晶表示素子 |
JPH0627985B2 (ja) * | 1987-05-06 | 1994-04-13 | 日本電気株式会社 | 薄膜トランジスタアレイ |
US4872002A (en) * | 1988-02-01 | 1989-10-03 | General Electric Company | Integrated matrix display circuitry |
US4963860A (en) * | 1988-02-01 | 1990-10-16 | General Electric Company | Integrated matrix display circuitry |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
GB8812235D0 (en) * | 1988-05-24 | 1988-06-29 | Jones B L | Manufacturing electronic devices |
FR2640809B1 (fr) * | 1988-12-19 | 1993-10-22 | Chouan Yannick | Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor |
US4968119A (en) * | 1989-01-10 | 1990-11-06 | David Sarnoff Research Center, Inc. | High-density liquid-crystal active dot-matrix display structure |
CA2059135A1 (en) * | 1989-06-17 | 1990-12-20 | William F. Glick | Color display system using thin film color control |
US5247375A (en) * | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
US5456860A (en) * | 1990-03-31 | 1995-10-10 | Merck Patent Gesellschaft Mit Beschrankter Haftung | Matrix liquid-crystal display |
US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5396304A (en) * | 1990-12-31 | 1995-03-07 | Kopin Corporation | Slide projector mountable light valve display |
US5528397A (en) | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
US5258320A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Single crystal silicon arrayed devices for display panels |
US5317436A (en) * | 1990-12-31 | 1994-05-31 | Kopin Corporation | A slide assembly for projector with active matrix moveably mounted to housing |
US5362671A (en) * | 1990-12-31 | 1994-11-08 | Kopin Corporation | Method of fabricating single crystal silicon arrayed devices for display panels |
US5666175A (en) * | 1990-12-31 | 1997-09-09 | Kopin Corporation | Optical systems for displays |
US6320568B1 (en) | 1990-12-31 | 2001-11-20 | Kopin Corporation | Control system for display panels |
US5376979A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | Slide projector mountable light valve display |
US5475514A (en) * | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
US5743614A (en) * | 1990-12-31 | 1998-04-28 | Kopin Corporation | Housing assembly for a matrix display |
US5677712A (en) * | 1991-01-08 | 1997-10-14 | Sharp Kabushiki Kaisha | Semiconductor device |
FR2679057B1 (fr) * | 1991-07-11 | 1995-10-20 | Morin Francois | Structure d'ecran a cristal liquide, a matrice active et a haute definition. |
KR970009405B1 (en) * | 1991-10-05 | 1997-06-13 | Fujitsu Ltd | Active matrix type display device |
DE69228789T2 (de) * | 1991-11-21 | 1999-07-22 | Fujitsu Ltd., Kawasaki, Kanagawa | Farbige Flüssigkristall-Anzeigevorrichtung |
DE69230138T2 (de) * | 1991-11-29 | 2000-04-27 | Seiko Epson Corp., Tokio/Tokyo | Flüssigkristall-anzeigevorrichtung und verfahren zu ihrer herstellung |
US5692820A (en) * | 1992-02-20 | 1997-12-02 | Kopin Corporation | Projection monitor |
US5467154A (en) * | 1992-02-20 | 1995-11-14 | Kopin Corporation | Projection monitor |
US6608654B2 (en) | 1992-09-11 | 2003-08-19 | Kopin Corporation | Methods of fabricating active matrix pixel electrodes |
US5705424A (en) * | 1992-09-11 | 1998-01-06 | Kopin Corporation | Process of fabricating active matrix pixel electrodes |
JPH06208126A (ja) * | 1992-09-30 | 1994-07-26 | Samsung Electron Co Ltd | 液晶表示素子の製造方法 |
JP3120200B2 (ja) * | 1992-10-12 | 2000-12-25 | セイコーインスツルメンツ株式会社 | 光弁装置、立体画像表示装置および画像プロジェクタ |
US5414283A (en) * | 1993-11-19 | 1995-05-09 | Ois Optical Imaging Systems, Inc. | TFT with reduced parasitic capacitance |
US5664859A (en) * | 1994-01-03 | 1997-09-09 | Kopin Corporation | Projection display docking system |
JP3232866B2 (ja) * | 1994-04-06 | 2001-11-26 | 株式会社日立製作所 | カラー液晶表示装置の製造方法 |
US5546204A (en) * | 1994-05-26 | 1996-08-13 | Honeywell Inc. | TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon |
US5694143A (en) | 1994-06-02 | 1997-12-02 | Accelerix Limited | Single chip frame buffer and graphics accelerator |
JPH10502181A (ja) | 1994-06-20 | 1998-02-24 | ネオマジック・コーポレイション | メモリインタフェースのないグラフィックスコントローラ集積回路 |
JP3715996B2 (ja) * | 1994-07-29 | 2005-11-16 | 株式会社日立製作所 | 液晶表示装置 |
US5576265A (en) * | 1995-04-26 | 1996-11-19 | Eastman Kodak Company | Color filter arrays by stencil printing |
US5994721A (en) | 1995-06-06 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | High aperture LCD with insulating color filters overlapping bus lines on active substrate |
US6372534B1 (en) | 1995-06-06 | 2002-04-16 | Lg. Philips Lcd Co., Ltd | Method of making a TFT array with photo-imageable insulating layer over address lines |
JP3559115B2 (ja) * | 1995-09-14 | 2004-08-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
US5599766A (en) | 1995-11-01 | 1997-02-04 | Eastman Kodak Company | Method of making a color filter array element |
GB2307598B (en) * | 1995-11-24 | 2000-02-23 | Varintelligent | Combined printed circuit board and integrated circuit driver |
US5683836A (en) * | 1996-01-16 | 1997-11-04 | Eastman Kodak Company | Method of making black matrix grid lines for a color filter array |
JP3256730B2 (ja) * | 1996-04-22 | 2002-02-12 | シャープ株式会社 | 液晶表示装置、およびその駆動方法 |
US5614465A (en) * | 1996-06-25 | 1997-03-25 | Eastman Kodak Company | Method of making a color filter array by thermal transfer |
US6356322B1 (en) * | 1996-09-30 | 2002-03-12 | Fuji Photo Film Co., Ltd. | Liquid crystal display system with improved contrast and less dependence on visual angle |
USRE38466E1 (en) * | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
JPH10228248A (ja) * | 1996-12-09 | 1998-08-25 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス表示装置およびその作製方法 |
CN1163781C (zh) | 1997-04-22 | 2004-08-25 | 松下电器产业株式会社 | 有源矩阵型液晶显示器件的驱动电路 |
US6359672B2 (en) | 1997-10-20 | 2002-03-19 | Guardian Industries Corp. | Method of making an LCD or X-ray imaging device with first and second insulating layers |
US6011274A (en) * | 1997-10-20 | 2000-01-04 | Ois Optical Imaging Systems, Inc. | X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween |
US6097416A (en) * | 1997-11-10 | 2000-08-01 | Eastman Kodak Company | Method for reducing donor utilization for radiation-induced colorant transfer |
JP4090569B2 (ja) * | 1997-12-08 | 2008-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置、液晶表示装置及びel表示装置 |
JP3973787B2 (ja) * | 1997-12-31 | 2007-09-12 | 三星電子株式会社 | 液晶表示装置及びその製造方法 |
US6379509B2 (en) | 1998-01-20 | 2002-04-30 | 3M Innovative Properties Company | Process for forming electrodes |
KR100474002B1 (ko) | 1998-04-28 | 2005-07-18 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의불량패드수리방법및그구조 |
JP2000039628A (ja) * | 1998-05-16 | 2000-02-08 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
KR100451381B1 (ko) | 1998-07-30 | 2005-06-01 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터및그제조방법 |
JP2002544568A (ja) | 1999-05-14 | 2002-12-24 | スリーエム イノベイティブ プロパティズ カンパニー | アブレーション強化層 |
KR100618573B1 (ko) * | 1999-09-21 | 2006-08-31 | 엘지.필립스 엘시디 주식회사 | 전계발광소자 및 그 구동방법 |
TW507258B (en) * | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
TW508545B (en) * | 2000-03-30 | 2002-11-01 | Seiko Epson Corp | Display apparatus |
US7633471B2 (en) | 2000-05-12 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric appliance |
JP4019627B2 (ja) * | 2000-11-14 | 2007-12-12 | セイコーエプソン株式会社 | カラーフィルタ用基板及びその製造方法、並びにカラー液晶表示装置及びその製造方法 |
US7023503B2 (en) * | 2002-02-20 | 2006-04-04 | Planar Systems, Inc. | Image sensor with photosensitive thin film transistors |
WO2003073159A1 (en) * | 2002-02-20 | 2003-09-04 | Planar Systems, Inc. | Light sensitive display |
US7009663B2 (en) * | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
US7053967B2 (en) * | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
US7372510B2 (en) * | 2002-03-01 | 2008-05-13 | Planar Systems, Inc. | Reflection resistant touch screens |
EP1507267B1 (de) * | 2002-05-17 | 2008-11-05 | Idemitsu Kosan Company Limited | Verdrahtungsmaterial und verdrahtungsboard damit |
AU2003258175A1 (en) * | 2002-08-12 | 2004-02-25 | Iljin Diamond Co., Ltd. | Integrated sequential color liquid crystal displays |
SG143934A1 (en) * | 2002-11-08 | 2008-07-29 | Semiconductor Energy Lab | Display appliance |
US7219241B2 (en) * | 2002-11-30 | 2007-05-15 | Intel Corporation | Method for managing virtual and actual performance states of logical processors in a multithreaded processor using system management mode |
US20080084374A1 (en) * | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
US20080048995A1 (en) * | 2003-02-20 | 2008-02-28 | Planar Systems, Inc. | Light sensitive display |
US20050134749A1 (en) * | 2003-12-19 | 2005-06-23 | Adiel Abileah | Reflection resistant display |
KR100631009B1 (ko) * | 2004-02-05 | 2006-10-04 | (주)사나이시스템 | 마스크 레이아웃으로부터 입체 구조물을 자동 생성하는 방법 |
US7773139B2 (en) * | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
TWI315805B (en) * | 2004-12-03 | 2009-10-11 | Himax Tech Inc | Liquid crystal display panel |
US20070109239A1 (en) * | 2005-11-14 | 2007-05-17 | Den Boer Willem | Integrated light sensitive liquid crystal display |
US8243126B2 (en) * | 2007-03-14 | 2012-08-14 | Chimei Innolux Corporation | Increase of perceived resolution for a dual view display device |
KR20090027920A (ko) * | 2007-09-13 | 2009-03-18 | 삼성전자주식회사 | 표시 기판 및 이를 구비한 표시 패널 |
CN101923246B (zh) * | 2009-06-16 | 2011-12-28 | 江苏丽恒电子有限公司 | 彩色液晶显示器 |
US20100328590A1 (en) * | 2009-06-29 | 2010-12-30 | Jiangsu Lexvu Electronics Co., Ltd. | Back substrate and reflective liquid crystal display |
CN101943828B (zh) * | 2009-07-07 | 2012-06-20 | 江苏丽恒电子有限公司 | 反射型彩色滤光液晶显示器 |
US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
US9939935B2 (en) | 2013-07-31 | 2018-04-10 | Apple Inc. | Scan engine for touch controller architecture |
US10061450B2 (en) | 2014-12-04 | 2018-08-28 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1133994A (en) * | 1965-02-03 | 1968-11-20 | Plessey Uk Ltd | Improvements relating to visual display apparatus |
US3840695A (en) * | 1972-10-10 | 1974-10-08 | Westinghouse Electric Corp | Liquid crystal image display panel with integrated addressing circuitry |
JPS5080799A (de) * | 1973-11-13 | 1975-07-01 | ||
JPS5551264B2 (de) * | 1974-05-14 | 1980-12-23 | ||
US4006968A (en) * | 1975-05-02 | 1977-02-08 | Hughes Aircraft Company | Liquid crystal dot color display |
US4188095A (en) * | 1975-07-29 | 1980-02-12 | Citizen Watch Co., Ltd. | Liquid type display cells and method of manufacturing the same |
US4006383A (en) * | 1975-11-28 | 1977-02-01 | Westinghouse Electric Corporation | Electroluminescent display panel with enlarged active display areas |
US4110662A (en) * | 1976-06-14 | 1978-08-29 | Westinghouse Electric Corp. | Thin-film analog video scan and driver circuit for solid state displays |
US4103297A (en) * | 1976-12-20 | 1978-07-25 | Hughes Aircraft Company | Light-insensitive matrix addressed liquid crystal display system |
US4112333A (en) * | 1977-03-23 | 1978-09-05 | Westinghouse Electric Corp. | Display panel with integral memory capability for each display element and addressing system |
US4156833A (en) * | 1977-05-24 | 1979-05-29 | Westinghouse Electric Corp. | Information display panel and method of fabrication |
JPS5919339B2 (ja) * | 1977-08-30 | 1984-05-04 | シャープ株式会社 | マトリツクス型液晶表示装置 |
JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
GB1602498A (en) * | 1978-05-31 | 1981-11-11 | Secr Defence | Fet devices and their fabrication |
US4245168A (en) * | 1978-08-03 | 1981-01-13 | General Electric Company | Integratable driver for liquid crystal displays and the like |
US4239346A (en) * | 1979-05-23 | 1980-12-16 | Hughes Aircraft Company | Compact liquid crystal display system |
JPS5611607A (en) * | 1979-07-03 | 1981-02-05 | Mitsubishi Electric Corp | High frequency bias circuit for multichannel magnetic tape recorder |
GB2056739B (en) * | 1979-07-30 | 1984-03-21 | Sharp Kk | Segmented type liquid crystal display and driving method thereof |
JPS5625714A (en) * | 1979-08-09 | 1981-03-12 | Canon Inc | Color liquid crystal display cell |
JPS6020724B2 (ja) * | 1979-11-26 | 1985-05-23 | 株式会社日立製作所 | 液晶表示素子の製造方法 |
JPS5685792A (en) * | 1979-12-14 | 1981-07-13 | Citizen Watch Co Ltd | Liquid crystal display unit |
JPS5691277A (en) * | 1979-12-25 | 1981-07-24 | Citizen Watch Co Ltd | Liquiddcrystal display panel |
DE3016396A1 (de) * | 1980-04-29 | 1981-11-05 | Vdo Adolf Schindling Ag, 6000 Frankfurt | Passives elektrooptisches anzeigeelement |
IL60156A (en) * | 1980-05-25 | 1984-11-30 | Stolov Michael | Large electronically controlled liquid crystal display of one or more colors |
US4502917A (en) * | 1980-09-15 | 1985-03-05 | Cherry Electrical Products Corporation | Process for forming patterned films |
US4336295A (en) * | 1980-12-22 | 1982-06-22 | Eastman Kodak Company | Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device |
US4481707A (en) * | 1983-02-24 | 1984-11-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the fabrication of dielectric isolated junction field effect transistor and PNP transistor |
-
1982
- 1982-07-12 JP JP57120808A patent/JPS5910988A/ja active Pending
-
1983
- 1983-07-01 US US06/510,481 patent/US4644338A/en not_active Expired - Lifetime
- 1983-07-06 GB GB08318316A patent/GB2126401B/en not_active Expired
- 1983-07-11 FR FR838311526A patent/FR2530057B1/fr not_active Expired
- 1983-07-12 DE DE3348002A patent/DE3348002C2/de not_active Expired
- 1983-07-12 DE DE19833325134 patent/DE3325134A1/de active Granted
-
1985
- 1985-08-05 GB GB08519597A patent/GB2161971B/en not_active Expired
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1986
- 1986-03-14 US US06/839,673 patent/US4654117A/en not_active Expired - Lifetime
- 1986-09-03 US US06/903,332 patent/US4740782A/en not_active Expired - Lifetime
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GB2126401A (en) | 1984-03-21 |
GB2126401B (en) | 1987-05-13 |
US4654117A (en) | 1987-03-31 |
GB8519597D0 (en) | 1985-09-11 |
DE3325134A1 (de) | 1984-01-19 |
GB8318316D0 (en) | 1983-08-10 |
JPS5910988A (ja) | 1984-01-20 |
US4644338A (en) | 1987-02-17 |
DE3348002C2 (de) | 1989-04-27 |
GB2161971A (en) | 1986-01-22 |
FR2530057A1 (fr) | 1984-01-13 |
GB2161971B (en) | 1987-05-20 |
FR2530057B1 (fr) | 1988-12-02 |
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