DE3324220C2 - Gallium-Phosphid-Leuchtdiode - Google Patents
Gallium-Phosphid-LeuchtdiodeInfo
- Publication number
- DE3324220C2 DE3324220C2 DE3324220A DE3324220A DE3324220C2 DE 3324220 C2 DE3324220 C2 DE 3324220C2 DE 3324220 A DE3324220 A DE 3324220A DE 3324220 A DE3324220 A DE 3324220A DE 3324220 C2 DE3324220 C2 DE 3324220C2
- Authority
- DE
- Germany
- Prior art keywords
- impurity concentration
- type layer
- layer
- substrate
- uarr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910005540 GaP Inorganic materials 0.000 title claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000005401 electroluminescence Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000000155 melt Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57119207A JPS599983A (ja) | 1982-07-08 | 1982-07-08 | 燐化ガリウム緑色発光ダイオ−ドの製造方法 |
| JP57119208A JPS599984A (ja) | 1982-07-08 | 1982-07-08 | 燐化ガリウム緑色発光ダイオ−ド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3324220A1 DE3324220A1 (de) | 1984-01-19 |
| DE3324220C2 true DE3324220C2 (de) | 1987-04-23 |
Family
ID=26456985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3324220A Expired DE3324220C2 (de) | 1982-07-08 | 1983-07-05 | Gallium-Phosphid-Leuchtdiode |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4562378A (US08087162-20120103-C00010.png) |
| DE (1) | DE3324220C2 (US08087162-20120103-C00010.png) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03209883A (ja) * | 1990-01-12 | 1991-09-12 | Sharp Corp | リン化ガリウム緑色発光素子 |
| DE59308636D1 (de) * | 1992-08-28 | 1998-07-09 | Siemens Ag | Leuchtdiode |
| JP2817577B2 (ja) * | 1993-05-31 | 1998-10-30 | 信越半導体株式会社 | ＧａＰ純緑色発光素子基板 |
| JP3163217B2 (ja) * | 1994-05-31 | 2001-05-08 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
| AU4695096A (en) * | 1995-01-06 | 1996-07-24 | National Aeronautics And Space Administration - Nasa | Minority carrier device |
| DE19549588C2 (de) * | 1995-03-17 | 2002-12-19 | Showa Denko Kk | Verfahren zu Herstellung einer Epitaxialstruktur für eine lichtemittierende GaP-Diode |
| JP3624451B2 (ja) * | 1995-03-17 | 2005-03-02 | 昭和電工株式会社 | 発光素子用ＧａＰエピタキシャル基板 |
| JP3356041B2 (ja) * | 1997-02-17 | 2002-12-09 | 昭和電工株式会社 | リン化ガリウム緑色発光素子 |
| TW513817B (en) * | 1999-10-29 | 2002-12-11 | Shinetsu Handotai Kk | Gallium phosphide luminescent device and its the manufacturing method |
| JP2015056648A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体発光素子およびそれを用いた発光装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017880A (en) * | 1973-02-12 | 1977-04-12 | Tokyo Shibaura Electric Co., Ltd. | Red light emitting gallium phosphide device |
| JPS551717B2 (US08087162-20120103-C00010.png) * | 1975-01-29 | 1980-01-16 | ||
| FR2373167A1 (fr) * | 1976-12-03 | 1978-06-30 | Radiotechnique Compelec | Dispositif electroluminescent a double confinement |
| DE2843983C2 (de) * | 1977-10-07 | 1983-09-15 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zum Herstellen einer Grünlicht emittierenden GaP-Lumineszenzdiode |
| US4354140A (en) * | 1979-05-28 | 1982-10-12 | Zaidan Hojin Handotai Kenkyu Shinkokai | Light-emitting semiconductor |
-
1983
- 1983-06-29 US US06/509,186 patent/US4562378A/en not_active Expired - Lifetime
- 1983-07-05 DE DE3324220A patent/DE3324220C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3324220A1 (de) | 1984-01-19 |
| US4562378A (en) | 1985-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |