DE68928913T2 - Halbleiterkommutator - Google Patents

Halbleiterkommutator

Info

Publication number
DE68928913T2
DE68928913T2 DE68928913T DE68928913T DE68928913T2 DE 68928913 T2 DE68928913 T2 DE 68928913T2 DE 68928913 T DE68928913 T DE 68928913T DE 68928913 T DE68928913 T DE 68928913T DE 68928913 T2 DE68928913 T2 DE 68928913T2
Authority
DE
Germany
Prior art keywords
semiconductor commutator
commutator
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928913T
Other languages
English (en)
Other versions
DE68928913D1 (de
Inventor
Toru Koizumi
Hidemasa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68928913D1 publication Critical patent/DE68928913D1/de
Publication of DE68928913T2 publication Critical patent/DE68928913T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/921—Nonselective diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/922—Diffusion along grain boundaries

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Motor Or Generator Current Collectors (AREA)
  • Thyristors (AREA)
DE68928913T 1988-10-20 1989-10-18 Halbleiterkommutator Expired - Fee Related DE68928913T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63262930A JP2746301B2 (ja) 1988-10-20 1988-10-20 半導体整流素子

Publications (2)

Publication Number Publication Date
DE68928913D1 DE68928913D1 (de) 1999-03-04
DE68928913T2 true DE68928913T2 (de) 1999-09-09

Family

ID=17382562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928913T Expired - Fee Related DE68928913T2 (de) 1988-10-20 1989-10-18 Halbleiterkommutator

Country Status (4)

Country Link
US (3) US5034782A (de)
EP (1) EP0367446B1 (de)
JP (1) JP2746301B2 (de)
DE (1) DE68928913T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746301B2 (ja) * 1988-10-20 1998-05-06 キヤノン株式会社 半導体整流素子
US6013565A (en) * 1991-12-16 2000-01-11 Penn State Research Foundation High conductivity thin film material for semiconductor device
JPH06151859A (ja) * 1992-09-15 1994-05-31 Canon Inc 半導体装置
US6025220A (en) * 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
WO2000077859A1 (fr) * 1999-06-16 2000-12-21 Matsushita Electric Industrial Co., Ltd. Dispositif a semiconducteur
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
US4259683A (en) * 1977-02-07 1981-03-31 General Electric Company High switching speed P-N junction devices with recombination means centrally located in high resistivity layer
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques
JPS6016466A (ja) * 1983-07-08 1985-01-28 Seiko Epson Corp 半導体装置
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
EP0178447B1 (de) * 1984-10-09 1993-02-17 Fujitsu Limited Verfahren zur Herstellung einer auf der Halbleiter-auf-Isolator-Technologie basierenden integrierten Schaltung
US4626883A (en) * 1985-06-27 1986-12-02 International Business Machines Corporation Textured crystal picosecond photoresponsive element
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JPS63119218A (ja) * 1986-11-07 1988-05-23 Canon Inc 半導体基材とその製造方法
JP2695413B2 (ja) * 1987-01-26 1997-12-24 キヤノン株式会社 結晶基材の製造方法
US4866291A (en) * 1987-06-30 1989-09-12 Canon Kabushiki Kaisha Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film
JP2746301B2 (ja) * 1988-10-20 1998-05-06 キヤノン株式会社 半導体整流素子

Also Published As

Publication number Publication date
US5572044A (en) 1996-11-05
JPH02111077A (ja) 1990-04-24
EP0367446B1 (de) 1999-01-20
US5034782A (en) 1991-07-23
US5571747A (en) 1996-11-05
JP2746301B2 (ja) 1998-05-06
DE68928913D1 (de) 1999-03-04
EP0367446A1 (de) 1990-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee