DE3317967C2 - Vorrichtung zum Erzielen von Wärmeübergang zwischen einem Halbleiterplättchen und einer Aufspannplatte - Google Patents
Vorrichtung zum Erzielen von Wärmeübergang zwischen einem Halbleiterplättchen und einer AufspannplatteInfo
- Publication number
- DE3317967C2 DE3317967C2 DE3317967A DE3317967A DE3317967C2 DE 3317967 C2 DE3317967 C2 DE 3317967C2 DE 3317967 A DE3317967 A DE 3317967A DE 3317967 A DE3317967 A DE 3317967A DE 3317967 C2 DE3317967 C2 DE 3317967C2
- Authority
- DE
- Germany
- Prior art keywords
- platen
- gas
- semiconductor wafer
- semiconductor
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 110
- 238000012546 transfer Methods 0.000 title claims description 42
- 238000012545 processing Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 67
- 239000007787 solid Substances 0.000 description 29
- 235000012431 wafers Nutrition 0.000 description 25
- 238000001816 cooling Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000036316 preload Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 244000181025 Rosa gallica Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/381,669 US4457359A (en) | 1982-05-25 | 1982-05-25 | Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3317967A1 DE3317967A1 (de) | 1983-12-01 |
| DE3317967C2 true DE3317967C2 (de) | 1996-11-28 |
Family
ID=23505921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3317967A Expired - Fee Related DE3317967C2 (de) | 1982-05-25 | 1983-05-17 | Vorrichtung zum Erzielen von Wärmeübergang zwischen einem Halbleiterplättchen und einer Aufspannplatte |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4457359A (enExample) |
| JP (1) | JPS58213434A (enExample) |
| DE (1) | DE3317967C2 (enExample) |
| FR (1) | FR2527838B1 (enExample) |
| GB (1) | GB2121603B (enExample) |
| NL (1) | NL194455C (enExample) |
Families Citing this family (115)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4537244A (en) * | 1982-05-25 | 1985-08-27 | Varian Associates, Inc. | Method for optimum conductive heat transfer with a thin flexible workpiece |
| JPH0693446B2 (ja) * | 1983-11-09 | 1994-11-16 | 株式会社日立製作所 | 処理装置 |
| JPH0614520B2 (ja) * | 1983-12-26 | 1994-02-23 | 株式会社日立製作所 | 低圧雰囲気内の処理装置 |
| US4603466A (en) * | 1984-02-17 | 1986-08-05 | Gca Corporation | Wafer chuck |
| JPS60187016A (ja) * | 1984-03-07 | 1985-09-24 | Ulvac Corp | ウエハ冷却装置 |
| JPH0640541B2 (ja) * | 1984-03-19 | 1994-05-25 | 株式会社日立製作所 | 真空処理装置 |
| US4535834A (en) * | 1984-05-02 | 1985-08-20 | Varian Associates, Inc. | Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| US4527620A (en) * | 1984-05-02 | 1985-07-09 | Varian Associates, Inc. | Apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| US4567938A (en) * | 1984-05-02 | 1986-02-04 | Varian Associates, Inc. | Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| JPS62252943A (ja) * | 1986-04-25 | 1987-11-04 | Fujitsu Ltd | 高周波プラズマエツチング装置 |
| US4671204A (en) * | 1986-05-16 | 1987-06-09 | Varian Associates, Inc. | Low compliance seal for gas-enhanced wafer cooling in vacuum |
| JPH01500942A (ja) * | 1986-10-08 | 1989-03-30 | バリアン・アソシエイツ・インコーポレイテッド | イオンビーム装置において入射角を一定にする方法および装置 |
| US4956046A (en) * | 1986-10-15 | 1990-09-11 | Advantage Production Technology, Inc. | Semiconductor substrate treating method |
| US4778559A (en) * | 1986-10-15 | 1988-10-18 | Advantage Production Technology | Semiconductor substrate heater and reactor process and apparatus |
| US5044314A (en) * | 1986-10-15 | 1991-09-03 | Advantage Production Technology, Inc. | Semiconductor wafer processing apparatus |
| US4891335A (en) * | 1986-10-15 | 1990-01-02 | Advantage Production Technology Inc. | Semiconductor substrate heater and reactor process and apparatus |
| US5484011A (en) * | 1986-12-19 | 1996-01-16 | Applied Materials, Inc. | Method of heating and cooling a wafer during semiconductor processing |
| US5755886A (en) * | 1986-12-19 | 1998-05-26 | Applied Materials, Inc. | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
| US5228501A (en) * | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
| DE3719952A1 (de) * | 1987-06-15 | 1988-12-29 | Convac Gmbh | Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementen |
| US4997606A (en) * | 1988-01-07 | 1991-03-05 | Varian Associates, Inc. | Methods and apparatus for fabricating a high purity thermally-conductive polymer layer |
| US4938992A (en) * | 1988-01-07 | 1990-07-03 | Varian Associates, Inc. | Methods for thermal transfer with a semiconductor |
| US4832781A (en) * | 1988-01-07 | 1989-05-23 | Varian Associates, Inc. | Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
| US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
| JPH076057B2 (ja) * | 1988-06-07 | 1995-01-25 | 株式会社村田製作所 | マスキング用ホルダー |
| EP0397315B1 (en) * | 1989-05-08 | 1995-03-01 | Applied Materials, Inc. | Method and apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment |
| US5002631A (en) * | 1990-03-09 | 1991-03-26 | At&T Bell Laboratories | Plasma etching apparatus and method |
| DE69130987T2 (de) | 1990-04-20 | 1999-09-30 | Applied Materials, Inc. | Vorrichtung zur Behandlung von Halbleiter-Plättchen |
| US5447570A (en) * | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
| US5673750A (en) * | 1990-05-19 | 1997-10-07 | Hitachi, Ltd. | Vacuum processing method and apparatus |
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| US5198753A (en) * | 1990-06-29 | 1993-03-30 | Digital Equipment Corporation | Integrated circuit test fixture and method |
| KR0165898B1 (ko) * | 1990-07-02 | 1999-02-01 | 미다 가쓰시게 | 진공처리방법 및 장치 |
| US5620525A (en) * | 1990-07-16 | 1997-04-15 | Novellus Systems, Inc. | Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate |
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| USH1145H (en) | 1990-09-25 | 1993-03-02 | Sematech, Inc. | Rapid temperature response wafer chuck |
| KR100188454B1 (ko) * | 1991-05-28 | 1999-06-01 | 이노우에 아키라 | 기판 처리 장치 |
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| JPH05166757A (ja) * | 1991-12-13 | 1993-07-02 | Tokyo Electron Ltd | 被処理体の温調装置 |
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| US20100270004A1 (en) * | 2005-05-12 | 2010-10-28 | Landess James D | Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates |
| US7941039B1 (en) | 2005-07-18 | 2011-05-10 | Novellus Systems, Inc. | Pedestal heat transfer and temperature control |
| US20070283709A1 (en) * | 2006-06-09 | 2007-12-13 | Veeco Instruments Inc. | Apparatus and methods for managing the temperature of a substrate in a high vacuum processing system |
| WO2008058397A1 (en) * | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| US7960297B1 (en) | 2006-12-07 | 2011-06-14 | Novellus Systems, Inc. | Load lock design for rapid wafer heating |
| US8096539B2 (en) * | 2007-06-28 | 2012-01-17 | Hitachi Global Storage Technologies, Netherlands, B.V. | O-ring free cooling pallet for hard disk drive slider carriers |
| US8052419B1 (en) | 2007-11-08 | 2011-11-08 | Novellus Systems, Inc. | Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation |
| US8092606B2 (en) * | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
| JP5718809B2 (ja) * | 2008-05-16 | 2015-05-13 | マトソン テクノロジー、インコーポレイテッド | 加工品の破壊を防止する方法および装置 |
| US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| US8225527B2 (en) | 2010-07-08 | 2012-07-24 | Aventa Technologies Llc | Cooling apparatus for a web deposition system |
| US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
| CN104040710B (zh) | 2012-01-06 | 2017-11-28 | 诺发系统公司 | 用于均匀传热的自适应传热方法和系统 |
| JP6308877B2 (ja) * | 2014-06-06 | 2018-04-11 | キヤノントッキ株式会社 | 成膜装置 |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3190262A (en) * | 1961-10-20 | 1965-06-22 | Alloyd Corp | Vapor deposition |
| US4282924A (en) * | 1979-03-16 | 1981-08-11 | Varian Associates, Inc. | Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface |
| US4261762A (en) * | 1979-09-14 | 1981-04-14 | Eaton Corporation | Method for conducting heat to or from an article being treated under vacuum |
| GB2106325A (en) * | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
-
1982
- 1982-05-25 US US06/381,669 patent/US4457359A/en not_active Expired - Lifetime
-
1983
- 1983-03-14 GB GB08306938A patent/GB2121603B/en not_active Expired
- 1983-04-28 JP JP58074207A patent/JPS58213434A/ja active Granted
- 1983-05-17 DE DE3317967A patent/DE3317967C2/de not_active Expired - Fee Related
- 1983-05-24 FR FR8308510A patent/FR2527838B1/fr not_active Expired
- 1983-05-25 NL NL8301847A patent/NL194455C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2527838B1 (fr) | 1986-03-21 |
| FR2527838A1 (fr) | 1983-12-02 |
| JPH0329170B2 (enExample) | 1991-04-23 |
| JPS58213434A (ja) | 1983-12-12 |
| GB2121603A (en) | 1983-12-21 |
| NL194455B (nl) | 2001-12-03 |
| NL194455C (nl) | 2002-04-04 |
| GB2121603B (en) | 1986-03-05 |
| NL8301847A (nl) | 1983-12-16 |
| GB8306938D0 (en) | 1983-04-20 |
| US4457359A (en) | 1984-07-03 |
| DE3317967A1 (de) | 1983-12-01 |
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