JPH0329170B2 - - Google Patents
Info
- Publication number
- JPH0329170B2 JPH0329170B2 JP58074207A JP7420783A JPH0329170B2 JP H0329170 B2 JPH0329170 B2 JP H0329170B2 JP 58074207 A JP58074207 A JP 58074207A JP 7420783 A JP7420783 A JP 7420783A JP H0329170 B2 JPH0329170 B2 JP H0329170B2
- Authority
- JP
- Japan
- Prior art keywords
- platen
- wafer
- gas
- pressure
- heat transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 49
- 239000007787 solid Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 230000036316 preload Effects 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000013529 heat transfer fluid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 117
- 238000001816 cooling Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/608,982 US4567455A (en) | 1983-04-28 | 1984-05-10 | Circuit interrupter |
| EP84303303A EP0128676B1 (en) | 1983-04-28 | 1984-05-16 | Circuit interrupter |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US381669 | 1982-05-25 | ||
| US06/381,669 US4457359A (en) | 1982-05-25 | 1982-05-25 | Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58213434A JPS58213434A (ja) | 1983-12-12 |
| JPH0329170B2 true JPH0329170B2 (enExample) | 1991-04-23 |
Family
ID=23505921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58074207A Granted JPS58213434A (ja) | 1982-05-25 | 1983-04-28 | 半導体ウエーハとプラテンの間に熱伝達を行なうための装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4457359A (enExample) |
| JP (1) | JPS58213434A (enExample) |
| DE (1) | DE3317967C2 (enExample) |
| FR (1) | FR2527838B1 (enExample) |
| GB (1) | GB2121603B (enExample) |
| NL (1) | NL194455C (enExample) |
Families Citing this family (115)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4537244A (en) * | 1982-05-25 | 1985-08-27 | Varian Associates, Inc. | Method for optimum conductive heat transfer with a thin flexible workpiece |
| JPH0693446B2 (ja) * | 1983-11-09 | 1994-11-16 | 株式会社日立製作所 | 処理装置 |
| JPH0614520B2 (ja) * | 1983-12-26 | 1994-02-23 | 株式会社日立製作所 | 低圧雰囲気内の処理装置 |
| US4603466A (en) * | 1984-02-17 | 1986-08-05 | Gca Corporation | Wafer chuck |
| JPS60187016A (ja) * | 1984-03-07 | 1985-09-24 | Ulvac Corp | ウエハ冷却装置 |
| JPH0640541B2 (ja) * | 1984-03-19 | 1994-05-25 | 株式会社日立製作所 | 真空処理装置 |
| US4535834A (en) * | 1984-05-02 | 1985-08-20 | Varian Associates, Inc. | Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| US4527620A (en) * | 1984-05-02 | 1985-07-09 | Varian Associates, Inc. | Apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| US4567938A (en) * | 1984-05-02 | 1986-02-04 | Varian Associates, Inc. | Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| JPS62252943A (ja) * | 1986-04-25 | 1987-11-04 | Fujitsu Ltd | 高周波プラズマエツチング装置 |
| US4671204A (en) * | 1986-05-16 | 1987-06-09 | Varian Associates, Inc. | Low compliance seal for gas-enhanced wafer cooling in vacuum |
| JPH01500942A (ja) * | 1986-10-08 | 1989-03-30 | バリアン・アソシエイツ・インコーポレイテッド | イオンビーム装置において入射角を一定にする方法および装置 |
| US4956046A (en) * | 1986-10-15 | 1990-09-11 | Advantage Production Technology, Inc. | Semiconductor substrate treating method |
| US4778559A (en) * | 1986-10-15 | 1988-10-18 | Advantage Production Technology | Semiconductor substrate heater and reactor process and apparatus |
| US5044314A (en) * | 1986-10-15 | 1991-09-03 | Advantage Production Technology, Inc. | Semiconductor wafer processing apparatus |
| US4891335A (en) * | 1986-10-15 | 1990-01-02 | Advantage Production Technology Inc. | Semiconductor substrate heater and reactor process and apparatus |
| US5484011A (en) * | 1986-12-19 | 1996-01-16 | Applied Materials, Inc. | Method of heating and cooling a wafer during semiconductor processing |
| US5755886A (en) * | 1986-12-19 | 1998-05-26 | Applied Materials, Inc. | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
| US5228501A (en) * | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
| DE3719952A1 (de) * | 1987-06-15 | 1988-12-29 | Convac Gmbh | Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementen |
| US4997606A (en) * | 1988-01-07 | 1991-03-05 | Varian Associates, Inc. | Methods and apparatus for fabricating a high purity thermally-conductive polymer layer |
| US4938992A (en) * | 1988-01-07 | 1990-07-03 | Varian Associates, Inc. | Methods for thermal transfer with a semiconductor |
| US4832781A (en) * | 1988-01-07 | 1989-05-23 | Varian Associates, Inc. | Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
| US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
| JPH076057B2 (ja) * | 1988-06-07 | 1995-01-25 | 株式会社村田製作所 | マスキング用ホルダー |
| EP0397315B1 (en) * | 1989-05-08 | 1995-03-01 | Applied Materials, Inc. | Method and apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment |
| US5002631A (en) * | 1990-03-09 | 1991-03-26 | At&T Bell Laboratories | Plasma etching apparatus and method |
| DE69130987T2 (de) | 1990-04-20 | 1999-09-30 | Applied Materials, Inc. | Vorrichtung zur Behandlung von Halbleiter-Plättchen |
| US5447570A (en) * | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
| US5673750A (en) * | 1990-05-19 | 1997-10-07 | Hitachi, Ltd. | Vacuum processing method and apparatus |
| US5452177A (en) | 1990-06-08 | 1995-09-19 | Varian Associates, Inc. | Electrostatic wafer clamp |
| US5198753A (en) * | 1990-06-29 | 1993-03-30 | Digital Equipment Corporation | Integrated circuit test fixture and method |
| KR0165898B1 (ko) * | 1990-07-02 | 1999-02-01 | 미다 가쓰시게 | 진공처리방법 및 장치 |
| US5620525A (en) * | 1990-07-16 | 1997-04-15 | Novellus Systems, Inc. | Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate |
| US5843233A (en) * | 1990-07-16 | 1998-12-01 | Novellus Systems, Inc. | Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus |
| US5578532A (en) * | 1990-07-16 | 1996-11-26 | Novellus Systems, Inc. | Wafer surface protection in a gas deposition process |
| US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
| US5133284A (en) * | 1990-07-16 | 1992-07-28 | National Semiconductor Corp. | Gas-based backside protection during substrate processing |
| US5238499A (en) * | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
| USH1145H (en) | 1990-09-25 | 1993-03-02 | Sematech, Inc. | Rapid temperature response wafer chuck |
| KR100188454B1 (ko) * | 1991-05-28 | 1999-06-01 | 이노우에 아키라 | 기판 처리 장치 |
| US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
| US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6090303A (en) * | 1991-06-27 | 2000-07-18 | Applied Materials, Inc. | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
| US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US5477975A (en) * | 1993-10-15 | 1995-12-26 | Applied Materials Inc | Plasma etch apparatus with heated scavenging surfaces |
| US6074512A (en) | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US5181556A (en) * | 1991-09-20 | 1993-01-26 | Intevac, Inc. | System for substrate cooling in an evacuated environment |
| JPH05166757A (ja) * | 1991-12-13 | 1993-07-02 | Tokyo Electron Ltd | 被処理体の温調装置 |
| JPH06158361A (ja) * | 1992-11-20 | 1994-06-07 | Hitachi Ltd | プラズマ処理装置 |
| US5738165A (en) * | 1993-05-07 | 1998-04-14 | Nikon Corporation | Substrate holding apparatus |
| US5509464A (en) * | 1993-07-30 | 1996-04-23 | Applied Materials, Inc. | Method and apparatus for cooling rectangular substrates |
| US5368645A (en) * | 1993-09-24 | 1994-11-29 | Specialty Coating Systems Inc. | Vacuum chuck for coating apparatus |
| US5791895A (en) * | 1994-02-17 | 1998-08-11 | Novellus Systems, Inc. | Apparatus for thermal treatment of thin film wafer |
| KR970005686B1 (ko) * | 1994-04-28 | 1997-04-18 | 한국베리안 주식회사 | 박막열처리 장치 |
| EP0871843B1 (en) * | 1994-10-17 | 2003-05-14 | Varian Semiconductor Equipment Associates Inc. | Mounting member and method for clamping a flat thin conductive workpiece |
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
| US5511608A (en) * | 1995-01-04 | 1996-04-30 | Boyd; Trace L. | Clampless vacuum heat transfer station |
| US5605600A (en) * | 1995-03-13 | 1997-02-25 | International Business Machines Corporation | Etch profile shaping through wafer temperature control |
| US5985089A (en) * | 1995-05-25 | 1999-11-16 | Tegal Corporation | Plasma etch system |
| TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
| US6113702A (en) | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
| US6053982A (en) * | 1995-09-01 | 2000-04-25 | Asm America, Inc. | Wafer support system |
| JPH0982785A (ja) * | 1995-09-18 | 1997-03-28 | Nec Corp | 半導体ウェハ温度制御装置 |
| US6036878A (en) | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
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| US6183523B1 (en) | 1997-03-03 | 2001-02-06 | Tokyo Electron Limited | Apparatus for thermal control of variously sized articles in vacuum |
| US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
| US6046116A (en) | 1997-11-19 | 2000-04-04 | Tegal Corporation | Method for minimizing the critical dimension growth of a feature on a semiconductor wafer |
| JP3909944B2 (ja) | 1998-01-12 | 2007-04-25 | キヤノンアネルバ株式会社 | 情報記録ディスク用基板の冷却機構及びこの冷却機構を備えた基板処理装置 |
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| KR20020041448A (ko) * | 1999-10-01 | 2002-06-01 | 추후보정 | 표면 구조 및 그 제조 방법, 및 표면 구조가 결합된 정전웨이퍼 클램프 |
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| US6362946B1 (en) | 1999-11-02 | 2002-03-26 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic wafer clamp having electrostatic seal for retaining gas |
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| US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
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| US20030168174A1 (en) * | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
| US6547559B1 (en) | 2002-05-20 | 2003-04-15 | Veeco Instruments, Inc. | Clamping of a semiconductor substrate for gas-assisted heat transfer in a vacuum chamber |
| US20040066601A1 (en) * | 2002-10-04 | 2004-04-08 | Varian Semiconductor Equipment Associates, Inc. | Electrode configuration for retaining cooling gas on electrostatic wafer clamp |
| WO2004057650A1 (en) | 2002-12-20 | 2004-07-08 | Mattson Technology Canada, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| US7033443B2 (en) * | 2003-03-28 | 2006-04-25 | Axcelis Technologies, Inc. | Gas-cooled clamp for RTP |
| US7000418B2 (en) * | 2004-05-14 | 2006-02-21 | Intevac, Inc. | Capacitance sensing for substrate cooling |
| US7296420B2 (en) * | 2004-12-02 | 2007-11-20 | Hitachi Global Storage Technologies Amsterdam, B.V. | Direct cooling pallet tray for temperature stability for deep ion mill etch process |
| US7481312B2 (en) * | 2004-12-02 | 2009-01-27 | Hitachi Global Storage Technologies Netherlands B.V. | Direct cooling pallet assembly for temperature stability for deep ion mill etch process |
| US7410888B2 (en) * | 2004-12-30 | 2008-08-12 | Texas Instruments Incorporated | Method for manufacturing strained silicon |
| US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
| US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
| US20100270004A1 (en) * | 2005-05-12 | 2010-10-28 | Landess James D | Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates |
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| US20070283709A1 (en) * | 2006-06-09 | 2007-12-13 | Veeco Instruments Inc. | Apparatus and methods for managing the temperature of a substrate in a high vacuum processing system |
| WO2008058397A1 (en) * | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| US7960297B1 (en) | 2006-12-07 | 2011-06-14 | Novellus Systems, Inc. | Load lock design for rapid wafer heating |
| US8096539B2 (en) * | 2007-06-28 | 2012-01-17 | Hitachi Global Storage Technologies, Netherlands, B.V. | O-ring free cooling pallet for hard disk drive slider carriers |
| US8052419B1 (en) | 2007-11-08 | 2011-11-08 | Novellus Systems, Inc. | Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation |
| US8092606B2 (en) * | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
| JP5718809B2 (ja) * | 2008-05-16 | 2015-05-13 | マトソン テクノロジー、インコーポレイテッド | 加工品の破壊を防止する方法および装置 |
| US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| US8225527B2 (en) | 2010-07-08 | 2012-07-24 | Aventa Technologies Llc | Cooling apparatus for a web deposition system |
| US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
| CN104040710B (zh) | 2012-01-06 | 2017-11-28 | 诺发系统公司 | 用于均匀传热的自适应传热方法和系统 |
| JP6308877B2 (ja) * | 2014-06-06 | 2018-04-11 | キヤノントッキ株式会社 | 成膜装置 |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3190262A (en) * | 1961-10-20 | 1965-06-22 | Alloyd Corp | Vapor deposition |
| US4282924A (en) * | 1979-03-16 | 1981-08-11 | Varian Associates, Inc. | Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface |
| US4261762A (en) * | 1979-09-14 | 1981-04-14 | Eaton Corporation | Method for conducting heat to or from an article being treated under vacuum |
| GB2106325A (en) * | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
-
1982
- 1982-05-25 US US06/381,669 patent/US4457359A/en not_active Expired - Lifetime
-
1983
- 1983-03-14 GB GB08306938A patent/GB2121603B/en not_active Expired
- 1983-04-28 JP JP58074207A patent/JPS58213434A/ja active Granted
- 1983-05-17 DE DE3317967A patent/DE3317967C2/de not_active Expired - Fee Related
- 1983-05-24 FR FR8308510A patent/FR2527838B1/fr not_active Expired
- 1983-05-25 NL NL8301847A patent/NL194455C/nl not_active IP Right Cessation
Non-Patent Citations (2)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE B LLETIN=1970 * |
| IBM TECHNICAL DISCLOSURE BULLETIN=1963 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2527838B1 (fr) | 1986-03-21 |
| FR2527838A1 (fr) | 1983-12-02 |
| JPS58213434A (ja) | 1983-12-12 |
| GB2121603A (en) | 1983-12-21 |
| NL194455B (nl) | 2001-12-03 |
| NL194455C (nl) | 2002-04-04 |
| GB2121603B (en) | 1986-03-05 |
| DE3317967C2 (de) | 1996-11-28 |
| NL8301847A (nl) | 1983-12-16 |
| GB8306938D0 (en) | 1983-04-20 |
| US4457359A (en) | 1984-07-03 |
| DE3317967A1 (de) | 1983-12-01 |
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