DE69112506T2 - CVD-Anlage und Verfahren zur Reduzierung der Teilchen-Verseuchung in einem CVD-Verfahren. - Google Patents

CVD-Anlage und Verfahren zur Reduzierung der Teilchen-Verseuchung in einem CVD-Verfahren.

Info

Publication number
DE69112506T2
DE69112506T2 DE69112506T DE69112506T DE69112506T2 DE 69112506 T2 DE69112506 T2 DE 69112506T2 DE 69112506 T DE69112506 T DE 69112506T DE 69112506 T DE69112506 T DE 69112506T DE 69112506 T2 DE69112506 T2 DE 69112506T2
Authority
DE
Germany
Prior art keywords
cvd
particle contamination
reducing particle
cvd process
cvd system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112506T
Other languages
English (en)
Other versions
DE69112506D1 (de
Inventor
James V Rinnovatore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69112506D1 publication Critical patent/DE69112506D1/de
Publication of DE69112506T2 publication Critical patent/DE69112506T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE69112506T 1990-06-28 1991-06-28 CVD-Anlage und Verfahren zur Reduzierung der Teilchen-Verseuchung in einem CVD-Verfahren. Expired - Fee Related DE69112506T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/545,425 US5188672A (en) 1990-06-28 1990-06-28 Reduction of particulate contaminants in chemical-vapor-deposition apparatus

Publications (2)

Publication Number Publication Date
DE69112506D1 DE69112506D1 (de) 1995-10-05
DE69112506T2 true DE69112506T2 (de) 1996-05-09

Family

ID=24176192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112506T Expired - Fee Related DE69112506T2 (de) 1990-06-28 1991-06-28 CVD-Anlage und Verfahren zur Reduzierung der Teilchen-Verseuchung in einem CVD-Verfahren.

Country Status (5)

Country Link
US (3) US5188672A (de)
EP (1) EP0463633B1 (de)
JP (1) JP2503128B2 (de)
KR (1) KR100206612B1 (de)
DE (1) DE69112506T2 (de)

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US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus
US5811631A (en) * 1994-04-29 1998-09-22 Motorola, Inc. Apparatus and method for decomposition of chemical compounds using a self-supporting member
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
FI109783B (fi) * 1997-02-27 2002-10-15 Kvaerner Masa Yards Oy Menetelmä kulkutien avaamiseksi jääkentän läpi ja jäänmurtaja
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6368567B2 (en) 1998-10-07 2002-04-09 Applied Materials, Inc. Point-of-use exhaust by-product reactor
JP4246343B2 (ja) * 2000-01-06 2009-04-02 株式会社荏原製作所 ガス雰囲気形成装置及びガス雰囲気形成方法
US20030004236A1 (en) * 2001-04-20 2003-01-02 Meade Thomas J. Magnetic resonance imaging agents for detection and delivery of therapeutic agents and detection of physiological substances
US20030135108A1 (en) * 2001-05-02 2003-07-17 Silva Robin M. High throughput screening methods using magnetic resonance imaging agents
US20060048707A1 (en) * 2004-09-03 2006-03-09 Applied Materials, Inc. Anti-clogging nozzle for semiconductor processing
US7510624B2 (en) * 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7740706B2 (en) * 2006-11-28 2010-06-22 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US20080121177A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080124944A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7351936B1 (en) * 2007-01-22 2008-04-01 Taiwan Semiconductor Manufacturing Company Method and apparatus for preventing baking chamber exhaust line clog
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
US9920418B1 (en) 2010-09-27 2018-03-20 James Stabile Physical vapor deposition apparatus having a tapered chamber
KR101395372B1 (ko) * 2011-12-07 2014-05-15 주식회사 엘지실트론 단결정 성장장치의 배기장치
US9679751B2 (en) * 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US9534295B2 (en) * 2013-07-17 2017-01-03 Applied Materials, Inc. Chamber pressure control apparatus for chemical vapor deposition systems
JP5944883B2 (ja) * 2013-12-18 2016-07-05 東京エレクトロン株式会社 粒子逆流防止部材及び基板処理装置
FR3057391B1 (fr) * 2016-10-11 2019-03-29 Soitec Equipement de traitement thermique avec dispositif collecteur
JP6896327B2 (ja) * 2017-03-09 2021-06-30 株式会社ディスコ 切削ブレード、マウントフランジ
US11221182B2 (en) 2018-07-31 2022-01-11 Applied Materials, Inc. Apparatus with multistaged cooling
US11306971B2 (en) 2018-12-13 2022-04-19 Applied Materials, Inc. Heat exchanger with multistaged cooling
US11685994B2 (en) * 2019-09-13 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. CVD device pumping liner
TWI746222B (zh) 2020-10-21 2021-11-11 財團法人工業技術研究院 鍍膜設備
US20220170151A1 (en) * 2020-12-01 2022-06-02 Applied Materials, Inc. Actively cooled foreline trap to reduce throttle valve drift

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Publication number Priority date Publication date Assignee Title
US3338209A (en) * 1965-10-23 1967-08-29 Sperry Rand Corp Epitaxial deposition apparatus
DE2743909A1 (de) * 1977-09-29 1979-04-12 Siemens Ag Vorrichtung fuer die gasphasenepitaxie
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
JPS5943861A (ja) * 1982-09-03 1984-03-12 Ulvac Corp ル−バ−式化学的蒸着装置
JPS5952834A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
JPS612319A (ja) * 1984-06-14 1986-01-08 Semiconductor Energy Lab Co Ltd Ｃｖｄ装置
JPS61111994A (ja) * 1985-11-01 1986-05-30 Hitachi Ltd Ｃｖｄ装置
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
JPS6389492A (ja) * 1986-10-02 1988-04-20 Mitsubishi Electric Corp 半導体結晶成長装置
US4838201A (en) * 1986-12-12 1989-06-13 Daido Sanso K. K. Apparatus and process for vacuum chemical epitaxy
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
US4807562A (en) * 1987-01-05 1989-02-28 Norman Sandys Reactor for heating semiconductor substrates
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US4992044A (en) * 1989-06-28 1991-02-12 Digital Equipment Corporation Reactant exhaust system for a thermal processing furnace
US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus

Also Published As

Publication number Publication date
US5322567A (en) 1994-06-21
EP0463633B1 (de) 1995-08-30
EP0463633A1 (de) 1992-01-02
JPH04233220A (ja) 1992-08-21
KR100206612B1 (ko) 1999-07-01
US5188672A (en) 1993-02-23
US5397596A (en) 1995-03-14
DE69112506D1 (de) 1995-10-05
KR920001621A (ko) 1992-01-30
JP2503128B2 (ja) 1996-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee