DE3302206A1 - Integrierte halbleiterschaltung - Google Patents
Integrierte halbleiterschaltungInfo
- Publication number
- DE3302206A1 DE3302206A1 DE19833302206 DE3302206A DE3302206A1 DE 3302206 A1 DE3302206 A1 DE 3302206A1 DE 19833302206 DE19833302206 DE 19833302206 DE 3302206 A DE3302206 A DE 3302206A DE 3302206 A1 DE3302206 A1 DE 3302206A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- layer
- semiconductor layer
- conductor track
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 110
- 239000004020 conductor Substances 0.000 claims description 124
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 25
- 230000000694 effects Effects 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008932A JPS58127363A (ja) | 1982-01-25 | 1982-01-25 | 半導体集積回路装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3302206A1 true DE3302206A1 (de) | 1983-08-04 |
Family
ID=11706432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833302206 Withdrawn DE3302206A1 (de) | 1982-01-25 | 1983-01-24 | Integrierte halbleiterschaltung |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS58127363A (enrdf_load_stackoverflow) |
| KR (1) | KR910002036B1 (enrdf_load_stackoverflow) |
| DE (1) | DE3302206A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2520555B1 (enrdf_load_stackoverflow) |
| GB (2) | GB2113915B (enrdf_load_stackoverflow) |
| HK (2) | HK70687A (enrdf_load_stackoverflow) |
| IT (1) | IT1160470B (enrdf_load_stackoverflow) |
| MY (1) | MY8700613A (enrdf_load_stackoverflow) |
| SG (1) | SG36587G (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3926011B2 (ja) | 1997-12-24 | 2007-06-06 | 株式会社ルネサステクノロジ | 半導体装置の設計方法 |
| JP4292668B2 (ja) * | 2000-01-31 | 2009-07-08 | 富士ゼロックス株式会社 | 発光サイリスタアレイ |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2313777A1 (fr) * | 1975-04-03 | 1976-12-31 | Ibm | Agencement semi-conducteur integre |
| DE1949484B2 (de) * | 1969-10-01 | 1978-02-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Leitungskreuzung fuer monolithisch integrierte halbleiterschaltungen und deren verwendung in einer speichermatrix |
| DE2800363A1 (de) * | 1977-01-17 | 1978-07-20 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung |
| DE3143565A1 (de) * | 1981-11-03 | 1983-05-11 | International Microcircuits Inc., 95051 Santa Clara, Calif. | Integrierte schaltung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443176A (en) * | 1966-03-31 | 1969-05-06 | Ibm | Low resistivity semiconductor underpass connector and fabrication method therefor |
| FR2244262B1 (enrdf_load_stackoverflow) * | 1973-09-13 | 1978-09-29 | Radiotechnique Compelec | |
| JPS5264830A (en) * | 1975-11-25 | 1977-05-28 | Hitachi Ltd | Power source supply system of integrated injection logical circuit |
| US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
-
1982
- 1982-01-25 JP JP57008932A patent/JPS58127363A/ja active Granted
- 1982-11-26 FR FR8219859A patent/FR2520555B1/fr not_active Expired
-
1983
- 1983-01-15 KR KR1019830000136A patent/KR910002036B1/ko not_active Expired
- 1983-01-21 GB GB08301731A patent/GB2113915B/en not_active Expired
- 1983-01-21 IT IT19236/83A patent/IT1160470B/it active
- 1983-01-24 DE DE19833302206 patent/DE3302206A1/de not_active Withdrawn
-
1984
- 1984-02-08 GB GB08403188A patent/GB2133622B/en not_active Expired
-
1987
- 1987-04-23 SG SG365/87A patent/SG36587G/en unknown
- 1987-10-01 HK HK706/87A patent/HK70687A/xx not_active IP Right Cessation
- 1987-10-01 HK HK712/87A patent/HK71287A/xx not_active IP Right Cessation
- 1987-12-30 MY MY613/87A patent/MY8700613A/xx unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1949484B2 (de) * | 1969-10-01 | 1978-02-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Leitungskreuzung fuer monolithisch integrierte halbleiterschaltungen und deren verwendung in einer speichermatrix |
| FR2313777A1 (fr) * | 1975-04-03 | 1976-12-31 | Ibm | Agencement semi-conducteur integre |
| DE2800363A1 (de) * | 1977-01-17 | 1978-07-20 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung |
| DE3143565A1 (de) * | 1981-11-03 | 1983-05-11 | International Microcircuits Inc., 95051 Santa Clara, Calif. | Integrierte schaltung |
Non-Patent Citations (1)
| Title |
|---|
| US-Z: IBM Technical Disclosure Bulletin, Bd.19, Dez. 1976, S.2598-99 * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8301731D0 (en) | 1983-02-23 |
| MY8700613A (en) | 1987-12-31 |
| GB8403188D0 (en) | 1984-03-14 |
| SG36587G (en) | 1987-07-24 |
| KR840003536A (ko) | 1984-09-08 |
| FR2520555A1 (fr) | 1983-07-29 |
| GB2113915B (en) | 1985-11-20 |
| HK70687A (en) | 1987-10-09 |
| GB2113915A (en) | 1983-08-10 |
| KR910002036B1 (ko) | 1991-03-30 |
| HK71287A (en) | 1987-10-09 |
| GB2133622A (en) | 1984-07-25 |
| JPH0334661B2 (enrdf_load_stackoverflow) | 1991-05-23 |
| JPS58127363A (ja) | 1983-07-29 |
| IT1160470B (it) | 1987-03-11 |
| GB2133622B (en) | 1985-11-20 |
| FR2520555B1 (fr) | 1987-02-20 |
| IT8319236A0 (it) | 1983-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8141 | Disposal/no request for examination |