DE3220084C2 - - Google Patents
Info
- Publication number
- DE3220084C2 DE3220084C2 DE3220084A DE3220084A DE3220084C2 DE 3220084 C2 DE3220084 C2 DE 3220084C2 DE 3220084 A DE3220084 A DE 3220084A DE 3220084 A DE3220084 A DE 3220084A DE 3220084 C2 DE3220084 C2 DE 3220084C2
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- electrode
- charge
- clock
- last
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UZHDGDDPOPDJGM-UHFFFAOYSA-N Stigmatellin A Natural products COC1=CC(OC)=C2C(=O)C(C)=C(CCC(C)C(OC)C(C)C(C=CC=CC(C)=CC)OC)OC2=C1O UZHDGDDPOPDJGM-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000037081 physical activity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE8102719,A NL186416C (nl) | 1981-06-05 | 1981-06-05 | Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3220084A1 DE3220084A1 (de) | 1983-01-20 |
| DE3220084C2 true DE3220084C2 (en:Method) | 1991-03-14 |
Family
ID=19837602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823220084 Granted DE3220084A1 (de) | 1981-06-05 | 1982-05-28 | Halbleiteranordnung, die eine vierphasen-ccd umfasst |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4584697A (en:Method) |
| JP (1) | JPS58175A (en:Method) |
| DE (1) | DE3220084A1 (en:Method) |
| FR (1) | FR2511545B1 (en:Method) |
| GB (1) | GB2101400B (en:Method) |
| IT (1) | IT1198375B (en:Method) |
| NL (1) | NL186416C (en:Method) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8500863A (nl) * | 1985-03-25 | 1986-10-16 | Philips Nv | Ladingsoverdrachtinrichting. |
| JPS6436073A (en) * | 1987-07-31 | 1989-02-07 | Toshiba Corp | Manufacture of semiconductor device |
| JP2606225B2 (ja) * | 1987-08-27 | 1997-04-30 | セイコーエプソン株式会社 | 電荷結合素子 |
| JPH03245504A (ja) * | 1990-02-23 | 1991-11-01 | Sumitomo Heavy Ind Ltd | 臨界磁場測定装置用磁石 |
| KR930002818B1 (ko) * | 1990-05-11 | 1993-04-10 | 금성일렉트론주식회사 | Ccd 영상소자 |
| DE69120773T2 (de) * | 1990-11-09 | 1997-02-06 | Matsushita Electronics Corp | Ladungsträgeranordnung, Verfahren zu ihrer Herstellung und Verfahren zu ihrer Steuerung |
| EP0492144A3 (en) * | 1990-11-26 | 1992-08-12 | Matsushita Electronics Corporation | Charge-coupled device and solid-state imaging device |
| US7247892B2 (en) * | 2000-04-24 | 2007-07-24 | Taylor Geoff W | Imaging array utilizing thyristor-based pixel elements |
| US6870207B2 (en) | 2000-04-24 | 2005-03-22 | The University Of Connecticut | III-V charge coupled device suitable for visible, near and far infra-red detection |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233946B2 (en:Method) * | 1971-11-17 | 1977-08-31 | ||
| JPS5242357B2 (en:Method) * | 1972-06-05 | 1977-10-24 | ||
| US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
| US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
| JPS53134372A (en) * | 1977-04-28 | 1978-11-22 | Mitsubishi Electric Corp | Charge transfer type semiconductor device and its driving method |
| GB2010010B (en) * | 1977-10-19 | 1982-02-17 | Gen Electric Co Ltd | Charge coupled devices |
-
1981
- 1981-06-05 NL NLAANVRAGE8102719,A patent/NL186416C/xx not_active IP Right Cessation
-
1982
- 1982-05-28 DE DE19823220084 patent/DE3220084A1/de active Granted
- 1982-06-02 GB GB08216060A patent/GB2101400B/en not_active Expired
- 1982-06-02 FR FR8209570A patent/FR2511545B1/fr not_active Expired
- 1982-06-02 IT IT21655/82A patent/IT1198375B/it active
- 1982-06-04 JP JP57096050A patent/JPS58175A/ja active Granted
-
1985
- 1985-03-19 US US06/713,582 patent/US4584697A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58175A (ja) | 1983-01-05 |
| NL186416C (nl) | 1990-11-16 |
| IT1198375B (it) | 1988-12-21 |
| FR2511545A1 (fr) | 1983-02-18 |
| US4584697A (en) | 1986-04-22 |
| IT8221655A0 (it) | 1982-06-02 |
| NL8102719A (nl) | 1983-01-03 |
| FR2511545B1 (fr) | 1986-07-25 |
| JPS6249748B2 (en:Method) | 1987-10-21 |
| GB2101400A (en) | 1983-01-12 |
| NL186416B (nl) | 1990-06-18 |
| GB2101400B (en) | 1984-11-14 |
| DE3220084A1 (de) | 1983-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
| 8339 | Ceased/non-payment of the annual fee |