JPS58175A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58175A
JPS58175A JP57096050A JP9605082A JPS58175A JP S58175 A JPS58175 A JP S58175A JP 57096050 A JP57096050 A JP 57096050A JP 9605082 A JP9605082 A JP 9605082A JP S58175 A JPS58175 A JP S58175A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
semiconductor device
charge
clock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57096050A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249748B2 (en:Method
Inventor
テウニス・ヨハネス・ハゼンドンク
アレンド・ヤン・クリンカ−マ−
ヘラルド・アンドレ・ベツク
テオドラス・フエルナンド・スミツト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS58175A publication Critical patent/JPS58175A/ja
Publication of JPS6249748B2 publication Critical patent/JPS6249748B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP57096050A 1981-06-05 1982-06-04 半導体装置 Granted JPS58175A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE8102719,A NL186416C (nl) 1981-06-05 1981-06-05 Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
NL8102719 1981-06-05

Publications (2)

Publication Number Publication Date
JPS58175A true JPS58175A (ja) 1983-01-05
JPS6249748B2 JPS6249748B2 (en:Method) 1987-10-21

Family

ID=19837602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57096050A Granted JPS58175A (ja) 1981-06-05 1982-06-04 半導体装置

Country Status (7)

Country Link
US (1) US4584697A (en:Method)
JP (1) JPS58175A (en:Method)
DE (1) DE3220084A1 (en:Method)
FR (1) FR2511545B1 (en:Method)
GB (1) GB2101400B (en:Method)
IT (1) IT1198375B (en:Method)
NL (1) NL186416C (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457668A (en) * 1987-08-27 1989-03-03 Seiko Epson Corp Charge coupled device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500863A (nl) * 1985-03-25 1986-10-16 Philips Nv Ladingsoverdrachtinrichting.
JPS6436073A (en) * 1987-07-31 1989-02-07 Toshiba Corp Manufacture of semiconductor device
JPH03245504A (ja) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd 臨界磁場測定装置用磁石
KR930002818B1 (ko) * 1990-05-11 1993-04-10 금성일렉트론주식회사 Ccd 영상소자
DE69120773T2 (de) * 1990-11-09 1997-02-06 Matsushita Electronics Corp Ladungsträgeranordnung, Verfahren zu ihrer Herstellung und Verfahren zu ihrer Steuerung
EP0492144A3 (en) * 1990-11-26 1992-08-12 Matsushita Electronics Corporation Charge-coupled device and solid-state imaging device
US7247892B2 (en) * 2000-04-24 2007-07-24 Taylor Geoff W Imaging array utilizing thyristor-based pixel elements
US6870207B2 (en) 2000-04-24 2005-03-22 The University Of Connecticut III-V charge coupled device suitable for visible, near and far infra-red detection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856380A (en:Method) * 1971-11-17 1973-08-08
JPS4970578A (en:Method) * 1972-06-05 1974-07-08

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
JPS53134372A (en) * 1977-04-28 1978-11-22 Mitsubishi Electric Corp Charge transfer type semiconductor device and its driving method
GB2010010B (en) * 1977-10-19 1982-02-17 Gen Electric Co Ltd Charge coupled devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856380A (en:Method) * 1971-11-17 1973-08-08
JPS4970578A (en:Method) * 1972-06-05 1974-07-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457668A (en) * 1987-08-27 1989-03-03 Seiko Epson Corp Charge coupled device

Also Published As

Publication number Publication date
NL186416C (nl) 1990-11-16
IT1198375B (it) 1988-12-21
FR2511545A1 (fr) 1983-02-18
US4584697A (en) 1986-04-22
IT8221655A0 (it) 1982-06-02
NL8102719A (nl) 1983-01-03
DE3220084C2 (en:Method) 1991-03-14
FR2511545B1 (fr) 1986-07-25
JPS6249748B2 (en:Method) 1987-10-21
GB2101400A (en) 1983-01-12
NL186416B (nl) 1990-06-18
GB2101400B (en) 1984-11-14
DE3220084A1 (de) 1983-01-20

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