JPH0125232B2 - - Google Patents

Info

Publication number
JPH0125232B2
JPH0125232B2 JP55118236A JP11823680A JPH0125232B2 JP H0125232 B2 JPH0125232 B2 JP H0125232B2 JP 55118236 A JP55118236 A JP 55118236A JP 11823680 A JP11823680 A JP 11823680A JP H0125232 B2 JPH0125232 B2 JP H0125232B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
input gate
electrodes
region
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55118236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5636163A (en
Inventor
Maute Manfureeto
Pufuraideraa Hansuieruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5636163A publication Critical patent/JPS5636163A/ja
Publication of JPH0125232B2 publication Critical patent/JPH0125232B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/452—Input structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Rectifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP11823680A 1979-08-31 1980-08-27 Integrated rectifying circuit Granted JPS5636163A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792935292 DE2935292A1 (de) 1979-08-31 1979-08-31 Integrierte gleichrichterschaltung

Publications (2)

Publication Number Publication Date
JPS5636163A JPS5636163A (en) 1981-04-09
JPH0125232B2 true JPH0125232B2 (en:Method) 1989-05-16

Family

ID=6079771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11823680A Granted JPS5636163A (en) 1979-08-31 1980-08-27 Integrated rectifying circuit

Country Status (4)

Country Link
US (1) US4412344A (en:Method)
EP (1) EP0025173B1 (en:Method)
JP (1) JPS5636163A (en:Method)
DE (1) DE2935292A1 (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341451A (ja) * 1986-08-06 1988-02-22 Nippon Kayaku Co Ltd エ−テル誘導体およびそれを有効成分とする殺ダニ、殺虫組成物
US5173849A (en) * 1987-09-19 1992-12-22 Magellan Corporation (Australia) Pty. Ltd. Integratable synchronous rectifier
US5107227A (en) * 1988-02-08 1992-04-21 Magellan Corporation (Australia) Pty. Ltd. Integratable phase-locked loop

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010484A (en) * 1974-08-16 1977-03-01 Bell Telephone Laboratories, Incorporated Charge injection input network for semiconductor charge transfer device
FR2390857A1 (fr) * 1977-05-13 1978-12-08 Thomson Csf Filtre recursif a transfert de charges electriques
FR2390853A1 (fr) * 1977-05-13 1978-12-08 Thomson Csf Dispositif differentiel a transfert de charges et filtre comportant un tel dispositif
US4158209A (en) * 1977-08-02 1979-06-12 Rca Corporation CCD comb filters
DE2838100A1 (de) * 1978-08-31 1980-04-10 Siemens Ag Eingangsstufe fuer eine ladungsverschiebeanordnung

Also Published As

Publication number Publication date
EP0025173B1 (de) 1986-05-07
JPS5636163A (en) 1981-04-09
DE2935292A1 (de) 1981-03-19
US4412344A (en) 1983-10-25
EP0025173A2 (de) 1981-03-18
EP0025173A3 (en) 1983-06-22

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