JPH0458700B2 - - Google Patents

Info

Publication number
JPH0458700B2
JPH0458700B2 JP58186077A JP18607783A JPH0458700B2 JP H0458700 B2 JPH0458700 B2 JP H0458700B2 JP 58186077 A JP58186077 A JP 58186077A JP 18607783 A JP18607783 A JP 18607783A JP H0458700 B2 JPH0458700 B2 JP H0458700B2
Authority
JP
Japan
Prior art keywords
charge
coupled device
clock
electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58186077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5987869A (ja
Inventor
Yan Marii Etsuseru Reonarudo
Yosefusu Henrikusu Uiruteingu Herumanusu
Fuerudeinando Suteikufuooruto Edoarudo
Maria Yosefu Fuaesu Henrikusu
Uiremu Rudeikufuitsue Adorianusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5987869A publication Critical patent/JPS5987869A/ja
Publication of JPH0458700B2 publication Critical patent/JPH0458700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP58186077A 1982-10-06 1983-10-06 電荷結合装置 Granted JPS5987869A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8203870A NL8203870A (nl) 1982-10-06 1982-10-06 Halfgeleiderinrichting.
NL8203870 1982-10-06

Publications (2)

Publication Number Publication Date
JPS5987869A JPS5987869A (ja) 1984-05-21
JPH0458700B2 true JPH0458700B2 (en:Method) 1992-09-18

Family

ID=19840377

Family Applications (3)

Application Number Title Priority Date Filing Date
JP58186077A Granted JPS5987869A (ja) 1982-10-06 1983-10-06 電荷結合装置
JP63184770A Expired - Lifetime JPH0656889B2 (ja) 1982-10-06 1988-07-26 半導体装置
JP63184769A Expired - Lifetime JPH0656888B2 (ja) 1982-10-06 1988-07-26 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP63184770A Expired - Lifetime JPH0656889B2 (ja) 1982-10-06 1988-07-26 半導体装置
JP63184769A Expired - Lifetime JPH0656888B2 (ja) 1982-10-06 1988-07-26 半導体装置

Country Status (5)

Country Link
US (3) US4590506A (en:Method)
EP (1) EP0111347B1 (en:Method)
JP (3) JPS5987869A (en:Method)
DE (1) DE3370249D1 (en:Method)
NL (1) NL8203870A (en:Method)

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KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補ｍｏｓ型半導体装置
JPH01286367A (ja) * 1988-05-12 1989-11-17 Nec Corp 縦型電界効果トランジスタ
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US4965648A (en) * 1988-07-07 1990-10-23 Tektronix, Inc. Tilted channel, serial-parallel-serial, charge-coupled device
US5223735A (en) * 1988-09-30 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
EP0404306A3 (en) * 1989-06-19 1991-07-17 Tektronix Inc. Trench structured charge-coupled device
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
DE69125794T2 (de) * 1990-11-23 1997-11-27 Texas Instruments Inc Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors
JP2647748B2 (ja) * 1990-12-26 1997-08-27 日本ビクター株式会社 Ｍｉｓトランジスタ
US5208477A (en) * 1990-12-31 1993-05-04 The United States Of America As Represented By The Secretary Of The Navy Resistive gate magnetic field sensor
JP3208595B2 (ja) * 1992-04-13 2001-09-17 ソニー株式会社 電荷転送装置
TW273039B (en:Method) * 1993-02-16 1996-03-21 At & T Corp
US5858821A (en) * 1993-05-12 1999-01-12 Micron Technology, Inc. Method of making thin film transistors
DE4435461C2 (de) * 1993-10-06 2001-09-20 Micron Technology Inc N D Ges Dünnfilmtransistor und dessen Herstellverfahren
JPH07176732A (ja) * 1993-10-29 1995-07-14 Nkk Corp Ｍｉｓ電界効果型トランジスタの製造方法
US5512495A (en) * 1994-04-08 1996-04-30 Texas Instruments Incorporated Method of manufacturing extended drain resurf lateral DMOS devices
JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
US5602410A (en) * 1995-08-25 1997-02-11 Siemens Aktiengesellschaft Off-state gate-oxide field reduction in CMOS
DE19612950C1 (de) * 1996-04-01 1997-07-31 Siemens Ag Schaltungsstruktur mit mindestens einem MOS-Transistor und Verfahren zu deren Herstellung
US5793070A (en) * 1996-04-24 1998-08-11 Massachusetts Institute Of Technology Reduction of trapping effects in charge transfer devices
US6023086A (en) * 1997-09-02 2000-02-08 Motorola, Inc. Semiconductor transistor with stabilizing gate electrode
US6043507A (en) * 1997-09-24 2000-03-28 Micron Technology, Inc. Thin film transistors and methods of making
US5966605A (en) * 1997-11-07 1999-10-12 Advanced Micro Devices, Inc. Reduction of poly depletion in semiconductor integrated circuits
US6087208A (en) * 1998-03-31 2000-07-11 Advanced Micro Devices, Inc. Method for increasing gate capacitance by using both high and low dielectric gate material
US6215152B1 (en) * 1998-08-05 2001-04-10 Cree, Inc. MOSFET having self-aligned gate and buried shield and method of making same
US6100564A (en) * 1998-09-30 2000-08-08 International Business Machines Corporation SOI pass-gate disturb solution
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6545316B1 (en) 2000-06-23 2003-04-08 Silicon Wireless Corporation MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
JP4635286B2 (ja) * 1999-11-25 2011-02-23 トヨタ自動車株式会社 半導体装置
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US6933554B1 (en) 2000-07-11 2005-08-23 Advanced Micro Devices, Inc. Recessed tunnel oxide profile for improved reliability in NAND devices
US20030091556A1 (en) * 2000-12-04 2003-05-15 Ruoslahti Erkki I. Methods of inhibiting tumor growth and angiogenesis with anastellin
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
GB0107405D0 (en) * 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
EP1396030B1 (en) * 2001-04-11 2011-06-29 Silicon Semiconductor Corporation Vertical power semiconductor device and method of making the same
US20040201078A1 (en) * 2003-04-11 2004-10-14 Liping Ren Field plate structure for high voltage devices
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
JP2008181988A (ja) * 2007-01-24 2008-08-07 Hitachi Ltd 半導体装置
JP2008277787A (ja) * 2007-03-30 2008-11-13 Nec Electronics Corp 電荷転送装置
WO2009133485A1 (en) * 2008-04-30 2009-11-05 Nxp B.V. A field effect transistor and a method of manufacturing the same
JP2010272729A (ja) * 2009-05-22 2010-12-02 Furukawa Electric Co Ltd:The 半導体素子
US8921797B2 (en) * 2012-06-20 2014-12-30 Oxford Instruments Analytical Oy Leakage current collection structure and a radiation detector with the same
US10937872B1 (en) * 2019-08-07 2021-03-02 Vanguard International Semiconductor Corporation Semiconductor structures
JP7246287B2 (ja) * 2019-09-13 2023-03-27 株式会社東芝 半導体装置およびその製造方法
WO2023161388A1 (en) * 2022-02-25 2023-08-31 Analog Devices International Unlimited Company Monolithicaly integrated field effect and bipolar devices having co-fabricated structures

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US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3728590A (en) * 1971-04-21 1973-04-17 Fairchild Camera Instr Co Charge coupled devices with continuous resistor electrode
US3932882A (en) * 1973-06-18 1976-01-13 Hewlett-Packard Company Charge transfer device
US4157557A (en) * 1973-07-23 1979-06-05 Sony Corporation Control circuit for signal transmission
US3943545A (en) * 1975-05-22 1976-03-09 Fairchild Camera And Instrument Corporation Low interelectrode leakage structure for charge-coupled devices
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
US4132903A (en) * 1977-05-12 1979-01-02 Rca Corporation CCD output circuit using thin film transistor
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
US4271419A (en) * 1978-01-16 1981-06-02 Texas Instruments Incorporated Serial readout stratified channel CCD
JPS5626467A (en) * 1979-08-10 1981-03-14 Toshiba Corp Semiconductor device and the manufacturing process
US4319261A (en) * 1980-05-08 1982-03-09 Westinghouse Electric Corp. Self-aligned, field aiding double polysilicon CCD electrode structure

Also Published As

Publication number Publication date
NL8203870A (nl) 1984-05-01
JPH0656889B2 (ja) 1994-07-27
JPS5987869A (ja) 1984-05-21
US4590506A (en) 1986-05-20
EP0111347B1 (en) 1987-03-11
JPS6446980A (en) 1989-02-21
DE3370249D1 (de) 1987-04-16
US4586064A (en) 1986-04-29
JPS6446981A (en) 1989-02-21
EP0111347A1 (en) 1984-06-20
US4590509A (en) 1986-05-20
JPH0656888B2 (ja) 1994-07-27

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