DE3176967D1 - Memory device - Google Patents

Memory device

Info

Publication number
DE3176967D1
DE3176967D1 DE8181105827T DE3176967T DE3176967D1 DE 3176967 D1 DE3176967 D1 DE 3176967D1 DE 8181105827 T DE8181105827 T DE 8181105827T DE 3176967 T DE3176967 T DE 3176967T DE 3176967 D1 DE3176967 D1 DE 3176967D1
Authority
DE
Germany
Prior art keywords
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181105827T
Other languages
English (en)
Inventor
Satoru Kobayashi
Shigeki Matsue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3176967D1 publication Critical patent/DE3176967D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093—Input synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
    • G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1087—Data input latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/107—Serial-parallel conversion of data or prefetch

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE8181105827T 1980-07-23 1981-07-23 Memory device Expired DE3176967D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10085080A JPS5727477A (en) 1980-07-23 1980-07-23 Memory circuit

Publications (1)

Publication Number Publication Date
DE3176967D1 true DE3176967D1 (en) 1989-02-09

Family

ID=14284790

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181105827T Expired DE3176967D1 (en) 1980-07-23 1981-07-23 Memory device

Country Status (4)

Country Link
US (1) US4429375A (de)
EP (1) EP0045063B1 (de)
JP (1) JPS5727477A (de)
DE (1) DE3176967D1 (de)

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* Cited by examiner, † Cited by third party
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US4344156A (en) * 1980-10-10 1982-08-10 Inmos Corporation High speed data transfer for a semiconductor memory
JPS57117168A (en) * 1981-01-08 1982-07-21 Nec Corp Memory circuit
JPS57150190A (en) * 1981-02-27 1982-09-16 Hitachi Ltd Monolithic storage device
US4577282A (en) 1982-02-22 1986-03-18 Texas Instruments Incorporated Microcomputer system for digital signal processing
US4491910A (en) * 1982-02-22 1985-01-01 Texas Instruments Incorporated Microcomputer having data shift within memory
JPS581891A (ja) * 1982-04-23 1983-01-07 Hitachi Ltd モノリシツク記憶装置
JPS5930295A (ja) * 1982-08-12 1984-02-17 Fujitsu Ltd 半導体メモリのアクセス方式
US4484308A (en) * 1982-09-23 1984-11-20 Motorola, Inc. Serial data mode circuit for a memory
JPS5975490A (ja) * 1982-10-22 1984-04-28 Hitachi Ltd 半導体記憶装置
JPS59180870A (ja) * 1983-03-31 1984-10-15 Fujitsu Ltd 半導体記憶装置
JPS6010493A (ja) * 1983-06-29 1985-01-19 Fujitsu Ltd 半導体記憶装置
JPS6072020A (ja) * 1983-09-29 1985-04-24 Nec Corp デュアルポ−トメモリ回路
JPS60117492A (ja) * 1983-11-29 1985-06-24 Fujitsu Ltd 半導体記憶装置
JPS60136086A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体記憶装置
US5163024A (en) * 1983-12-30 1992-11-10 Texas Instruments Incorporated Video display system using memory with parallel and serial access employing serial shift registers selected by column address
US4688197A (en) * 1983-12-30 1987-08-18 Texas Instruments Incorporated Control of data access to memory for improved video system
JPS60236184A (ja) * 1984-05-08 1985-11-22 Nec Corp 半導体メモリ
JPS6167154A (ja) * 1984-09-11 1986-04-07 Fujitsu Ltd 半導体記憶装置
JPS6194290A (ja) * 1984-10-15 1986-05-13 Fujitsu Ltd 半導体メモリ
DE3586523T2 (de) * 1984-10-17 1993-01-07 Fujitsu Ltd Halbleiterspeicheranordnung mit einer seriellen dateneingangs- und ausgangsschaltung.
JPS61104391A (ja) * 1984-10-23 1986-05-22 Fujitsu Ltd 半導体記憶装置
JPS61160898A (ja) * 1985-01-05 1986-07-21 Fujitsu Ltd 半導体記憶装置
EP0523759B1 (de) * 1985-01-22 1998-05-20 Texas Instruments Incorporated Halbleiterspeicher mit Serienzugriff
JPS61227289A (ja) * 1985-03-30 1986-10-09 Fujitsu Ltd 半導体記憶装置
JPS61239491A (ja) * 1985-04-13 1986-10-24 Fujitsu Ltd 電子装置
JPS6221357A (ja) * 1985-07-22 1987-01-29 Toshiba Corp メモリシステム
JPS62117187A (ja) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp ２ポ−ト半導体記憶装置
JPH0642313B2 (ja) * 1985-12-20 1994-06-01 日本電気株式会社 半導体メモリ
JPS62194561A (ja) * 1986-02-21 1987-08-27 Toshiba Corp 半導体記憶装置
US4800530A (en) * 1986-08-19 1989-01-24 Kabushiki Kasiha Toshiba Semiconductor memory system with dynamic random access memory cells
KR960001106B1 (ko) * 1986-12-17 1996-01-18 가부시기가이샤 히다찌세이사꾸쇼 반도체 메모리
DE3742514A1 (de) * 1986-12-24 1988-07-07 Mitsubishi Electric Corp Variable verzoegerungsschaltung
JP2982902B2 (ja) * 1987-06-16 1999-11-29 三菱電機株式会社 半導体メモリ
JPS6468851A (en) * 1987-09-09 1989-03-14 Nippon Electric Ic Microcomput Semiconductor integrated circuit
US4825410A (en) * 1987-10-26 1989-04-25 International Business Machines Corporation Sense amplifier control circuit
US5034917A (en) * 1988-05-26 1991-07-23 Bland Patrick M Computer system including a page mode memory with decreased access time and method of operation thereof
JPH04176088A (ja) * 1990-10-26 1992-06-23 Hitachi Micom Syst:Kk 半導体記憶装置
JP3992757B2 (ja) * 1991-04-23 2007-10-17 テキサス インスツルメンツ インコーポレイテツド マイクロプロセッサと同期するメモリ、及びデータプロセッサ、同期メモリ、周辺装置とシステムクロックを含むシステム
GB2259589A (en) * 1991-09-12 1993-03-17 Motorola Inc Self - timed random access memories
JPH07248958A (ja) * 1994-03-14 1995-09-26 Fujitsu Ltd メモリ制御方式
US5526316A (en) * 1994-04-29 1996-06-11 Winbond Electronics Corp. Serial access memory device
TW388982B (en) * 1995-03-31 2000-05-01 Samsung Electronics Co Ltd Memory controller which executes read and write commands out of order
US5666494A (en) * 1995-03-31 1997-09-09 Samsung Electronics Co., Ltd. Queue management mechanism which allows entries to be processed in any order
US5638534A (en) * 1995-03-31 1997-06-10 Samsung Electronics Co., Ltd. Memory controller which executes read and write commands out of order
KR0156969B1 (ko) * 1995-05-15 1998-12-01 김주용 버스트 페이지 억세스 장치
US5903174A (en) * 1995-12-20 1999-05-11 Cypress Semiconductor Corp. Method and apparatus for reducing skew among input signals within an integrated circuit
US5835970A (en) * 1995-12-21 1998-11-10 Cypress Semiconductor Corp. Burst address generator having two modes of operation employing a linear/nonlinear counter using decoded addresses
US6043684A (en) * 1995-12-20 2000-03-28 Cypress Semiconductor Corp. Method and apparatus for reducing skew between input signals and clock signals within an integrated circuit
US6411140B1 (en) 1995-12-20 2002-06-25 Cypress Semiconductor Corporation Method and apparatus for reducing skew between input signals and clock signals within an integrated circuit
US6115321A (en) * 1997-06-17 2000-09-05 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
US6097222A (en) * 1997-10-27 2000-08-01 Cypress Semiconductor Corp. Symmetrical NOR gates
US5889416A (en) * 1997-10-27 1999-03-30 Cypress Semiconductor Corporation Symmetrical nand gates
US6240047B1 (en) 1998-07-06 2001-05-29 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
KR102468291B1 (ko) * 2018-04-30 2022-11-21 에스케이하이닉스 주식회사 반도체 장치

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US3857046A (en) * 1970-11-04 1974-12-24 Gen Instrument Corp Shift register-decoder circuit for addressing permanent storage memory
NL7309642A (nl) * 1973-07-11 1975-01-14 Philips Nv Geintegreerd geheugen.
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
US4120048A (en) * 1977-12-27 1978-10-10 Rockwell International Corporation Memory with simultaneous sequential and random address modes
DE2948159C2 (de) * 1979-11-29 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierter Speicherbaustein mit wählbaren Betriebsfunktionen

Also Published As

Publication number Publication date
US4429375A (en) 1984-01-31
JPS5727477A (en) 1982-02-13
EP0045063A2 (de) 1982-02-03
EP0045063A3 (en) 1982-02-10
JPS6118837B2 (de) 1986-05-14
EP0045063B1 (de) 1989-01-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition