DE3119137A1 - Halbleiter und verfahren zu deren herstellung - Google Patents
Halbleiter und verfahren zu deren herstellungInfo
- Publication number
- DE3119137A1 DE3119137A1 DE19813119137 DE3119137A DE3119137A1 DE 3119137 A1 DE3119137 A1 DE 3119137A1 DE 19813119137 DE19813119137 DE 19813119137 DE 3119137 A DE3119137 A DE 3119137A DE 3119137 A1 DE3119137 A1 DE 3119137A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- doped
- grooves
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 13
- 101150068246 V-MOS gene Proteins 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000005530 etching Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000003491 array Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- AJRJPORIQGYFMT-RMOCHZDMSA-N 2-Ethylidene-1,5-dimethyl-3,3-diphenylpyrrolidine Chemical compound C\C=C1\N(C)C(C)CC1(C=1C=CC=CC=1)C1=CC=CC=C1 AJRJPORIQGYFMT-RMOCHZDMSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WAGLOELVFBOTBP-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine;pyrazine Chemical compound NCCN.C1=CN=CC=N1.OC1=CC=CC=C1O WAGLOELVFBOTBP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/154,280 US4379305A (en) | 1980-05-29 | 1980-05-29 | Mesh gate V-MOS power FET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3119137A1 true DE3119137A1 (de) | 1982-03-04 |
Family
ID=22550726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813119137 Withdrawn DE3119137A1 (de) | 1980-05-29 | 1981-05-14 | Halbleiter und verfahren zu deren herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4379305A (enExample) |
| JP (1) | JPS5756975A (enExample) |
| CA (1) | CA1154543A (enExample) |
| DE (1) | DE3119137A1 (enExample) |
| FR (1) | FR2483685A1 (enExample) |
| GB (1) | GB2077495B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| JPS58106870A (ja) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | パワ−ｍｏｓｆｅｔ |
| EP0091686B1 (en) * | 1982-04-12 | 1989-06-28 | General Electric Company | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
| JP2739004B2 (ja) * | 1992-01-16 | 1998-04-08 | 三菱電機株式会社 | 半導体装置 |
| DE19918198B4 (de) * | 1998-04-23 | 2008-04-17 | International Rectifier Corp., El Segundo | Struktur eines P-Kanal-Graben-MOSFETs |
| US7462910B1 (en) | 1998-10-14 | 2008-12-09 | International Rectifier Corporation | P-channel trench MOSFET structure |
| US7737533B2 (en) * | 2006-08-10 | 2010-06-15 | Vishay General Semiconductor Llc | Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage |
| US8072027B2 (en) * | 2009-06-08 | 2011-12-06 | Fairchild Semiconductor Corporation | 3D channel architecture for semiconductor devices |
| FR3070221B1 (fr) | 2017-08-16 | 2020-05-15 | Stmicroelectronics (Rousset) Sas | Transistors mos en parallele |
| FR3070222A1 (fr) | 2017-08-16 | 2019-02-22 | Stmicroelectronics (Rousset) Sas | Puce comprenant deux transistors mos en parallele |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4148047A (en) * | 1978-01-16 | 1979-04-03 | Honeywell Inc. | Semiconductor apparatus |
| DE2904769A1 (de) * | 1978-02-17 | 1979-08-23 | Siliconix Inc | Verfahren zum herstellen eines v-nut-mos-feldeffekttransistors und transistor dieses typs |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
| JPS53142189A (en) * | 1977-05-17 | 1978-12-11 | Matsushita Electronics Corp | Insulating gate type field effect transistor |
| JPS5469085A (en) * | 1977-11-03 | 1979-06-02 | Ei Hoerunii Jiin | Large power semiconductor |
| US4198693A (en) * | 1978-03-20 | 1980-04-15 | Texas Instruments Incorporated | VMOS Read only memory |
| NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
| US4268537A (en) * | 1979-12-03 | 1981-05-19 | Rca Corporation | Method for manufacturing a self-aligned contact in a grooved semiconductor surface |
-
1980
- 1980-05-29 US US06/154,280 patent/US4379305A/en not_active Expired - Lifetime
-
1981
- 1981-05-05 CA CA000376862A patent/CA1154543A/en not_active Expired
- 1981-05-14 DE DE19813119137 patent/DE3119137A1/de not_active Withdrawn
- 1981-05-26 FR FR8110413A patent/FR2483685A1/fr active Granted
- 1981-05-28 GB GB8116469A patent/GB2077495B/en not_active Expired
- 1981-05-29 JP JP56081249A patent/JPS5756975A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4148047A (en) * | 1978-01-16 | 1979-04-03 | Honeywell Inc. | Semiconductor apparatus |
| DE2904769A1 (de) * | 1978-02-17 | 1979-08-23 | Siliconix Inc | Verfahren zum herstellen eines v-nut-mos-feldeffekttransistors und transistor dieses typs |
Non-Patent Citations (2)
| Title |
|---|
| US-Z.: Electronics, Ausgabe v. 14.2.1980, S. 46,47 * |
| US-Z.: IEEE Trans. Electron Devices, Vol. ED-25, 1978, S. 1229-1234 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2483685B1 (enExample) | 1984-05-18 |
| JPS5756975A (en) | 1982-04-05 |
| GB2077495A (en) | 1981-12-16 |
| US4379305A (en) | 1983-04-05 |
| FR2483685A1 (fr) | 1981-12-04 |
| GB2077495B (en) | 1985-04-11 |
| CA1154543A (en) | 1983-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69032735T2 (de) | Verfahren zum Herstellen von Hochspannungs- und Niederspannungs-CMOS-Transistoren in einem einzigen integrierten Schaltungs-Chip | |
| DE1764056C2 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE4013643C2 (de) | Bipolartransistor mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung | |
| DE69225552T2 (de) | Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung | |
| DE2212049C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und Verfahren zur Herstellung eines Transistors | |
| DE69111929T2 (de) | Halbleiteranordnung auf einem dielektrischen isolierten Substrat. | |
| DE60132994T2 (de) | Verfahren zur herstellung eines leistungs-mosfets | |
| DE3816002C2 (enExample) | ||
| DE69012611T2 (de) | Verfahren zum Herstellen bipolarer vertikaler Transistoren und von Hochspannungs-CMOS-Transistoren in einer einzigen integrierten Schaltung. | |
| DE69121535T2 (de) | Feldeffekttransistor mit inverser T-förmiger Silizid-Torelektrode | |
| DE69130030T2 (de) | N-Kanal-Klemmelement für einen ESD-Schutz bei der Herstellung eines selbstjustierenden, mit einem Silicid versehenen CMOS | |
| DE2745857C2 (enExample) | ||
| DE3019850C2 (enExample) | ||
| DE3886074T2 (de) | Herstellung einer Halbleiterstruktur. | |
| DE2754229A1 (de) | Leistungsbauelement vom mosfet-typ und zugehoeriges herstellungsverfahren | |
| DE3334337A1 (de) | Verfahren zur herstellung einer integrierten halbleitereinrichtung | |
| DE3110477A1 (de) | Verfahren zur herstellung von cmos-bauelementen | |
| DE2352762A1 (de) | Verfahren zur herstellung einer halbleiteranordnung mit komplementaeren feldeffekt-transistoren | |
| DE19701189A1 (de) | Halbleiterbauteil | |
| DE3603470A1 (de) | Verfahren zur herstellung von feldeffektbauelementen auf einem siliziumsubstrat | |
| DE2716691A1 (de) | Feldeffekttransistor und verfahren zu dessen herstellung | |
| DE2749607C3 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| CH661150A5 (de) | Verfahren zum erzeugen einer schmalen nut in einem substratgebiet, insbesondere einem halbleitersubstratgebiet. | |
| DE4042163A1 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
| DE2420239A1 (de) | Verfahren zur herstellung doppelt diffundierter lateraler transistoren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8128 | New person/name/address of the agent |
Representative=s name: ZELLENTIN, R., DIPL.-GEOLOGE DR.RER.NAT., 8000 MUE |
|
| 8139 | Disposal/non-payment of the annual fee |