DE3115695C2 - - Google Patents

Info

Publication number
DE3115695C2
DE3115695C2 DE3115695A DE3115695A DE3115695C2 DE 3115695 C2 DE3115695 C2 DE 3115695C2 DE 3115695 A DE3115695 A DE 3115695A DE 3115695 A DE3115695 A DE 3115695A DE 3115695 C2 DE3115695 C2 DE 3115695C2
Authority
DE
Germany
Prior art keywords
light
layer
circuit
electrically conductive
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3115695A
Other languages
German (de)
English (en)
Other versions
DE3115695A1 (de
Inventor
Masamich Musashino Tokio/Tokyo Jp Asano
Hiroshi Yokohama Jp Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3115695A1 publication Critical patent/DE3115695A1/de
Application granted granted Critical
Publication of DE3115695C2 publication Critical patent/DE3115695C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
DE19813115695 1980-04-24 1981-04-18 Integrierte halbleiterschaltung Granted DE3115695A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5455580A JPS56150871A (en) 1980-04-24 1980-04-24 Semiconductor device

Publications (2)

Publication Number Publication Date
DE3115695A1 DE3115695A1 (de) 1982-02-04
DE3115695C2 true DE3115695C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-06-15

Family

ID=12973924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813115695 Granted DE3115695A1 (de) 1980-04-24 1981-04-18 Integrierte halbleiterschaltung

Country Status (4)

Country Link
US (1) US4949152A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS56150871A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3115695A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2074788B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921064A (ja) * 1982-04-30 1984-02-02 Seiko Epson Corp 液晶表示装置
US5650637A (en) 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
JPS5980964A (ja) * 1982-11-01 1984-05-10 Toshiba Corp 光電変換素子
JPS59103382A (ja) * 1982-12-03 1984-06-14 Sanyo Electric Co Ltd フロ−テイングゲ−ト型不揮発性メモリ素子
JPH054280Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-04-17 1993-02-02
US4758869A (en) * 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US5034786A (en) * 1986-08-29 1991-07-23 Waferscale Integration, Inc. Opaque cover for preventing erasure of an EPROM
FR2619959B1 (fr) * 1987-08-31 1991-06-14 Thomson Semiconducteurs Circuit de detection de lumiere
JPH0799298A (ja) * 1993-09-28 1995-04-11 Sony Corp 固体撮像素子及びその製造方法
JP3697769B2 (ja) * 1995-02-24 2005-09-21 株式会社ニコン 光電変換素子及び光電変換装置
GB2319602B (en) * 1996-11-21 2000-10-04 Motorola Ltd Light detection device
US5917645A (en) * 1997-03-28 1999-06-29 Daewoo Electronics Co., Ltd. Thin film actuated mirror array in an optical projection system and method for manufacturing the same
JP4259979B2 (ja) 2003-10-22 2009-04-30 新光電気工業株式会社 光透過性カバー及びこれを備えたデバイス並びにそれらの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614865A1 (de) * 1967-09-27 1970-12-23 Telefunken Patent Optoelektronische Halbleiteranordnung
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
GB1392599A (en) * 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
JPS5036087A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-13 1975-04-04
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
JPS51120685A (en) * 1975-04-16 1976-10-22 Nippon Denso Co Ltd Semtconductor element
JPS5289480A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Semiconductive nonvoltile memory device
JPS52151576A (en) * 1976-06-11 1977-12-16 Matsushita Electric Ind Co Ltd Semiconductor device
US4326214A (en) * 1976-11-01 1982-04-20 National Semiconductor Corporation Thermal shock resistant package having an ultraviolet light transmitting window for a semiconductor chip
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
US4096512A (en) * 1977-03-09 1978-06-20 Rca Corp. Monolithic light detector
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
JPS582439B2 (ja) * 1978-11-27 1983-01-17 富士通株式会社 ブ−トストラツプ回路
US4536941A (en) * 1980-03-21 1985-08-27 Kuo Chang Kiang Method of making high density dynamic memory cell

Also Published As

Publication number Publication date
US4949152A (en) 1990-08-14
DE3115695A1 (de) 1982-02-04
JPS56150871A (en) 1981-11-21
GB2074788A (en) 1981-11-04
GB2074788B (en) 1985-02-27

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee