GB2074788B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
GB2074788B
GB2074788B GB8110512A GB8110512A GB2074788B GB 2074788 B GB2074788 B GB 2074788B GB 8110512 A GB8110512 A GB 8110512A GB 8110512 A GB8110512 A GB 8110512A GB 2074788 B GB2074788 B GB 2074788B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8110512A
Other languages
English (en)
Other versions
GB2074788A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2074788A publication Critical patent/GB2074788A/en
Application granted granted Critical
Publication of GB2074788B publication Critical patent/GB2074788B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB8110512A 1980-04-24 1981-04-03 Semiconductor integrated circuit Expired GB2074788B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5455580A JPS56150871A (en) 1980-04-24 1980-04-24 Semiconductor device

Publications (2)

Publication Number Publication Date
GB2074788A GB2074788A (en) 1981-11-04
GB2074788B true GB2074788B (en) 1985-02-27

Family

ID=12973924

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8110512A Expired GB2074788B (en) 1980-04-24 1981-04-03 Semiconductor integrated circuit

Country Status (4)

Country Link
US (1) US4949152A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS56150871A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3115695A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2074788B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921064A (ja) * 1982-04-30 1984-02-02 Seiko Epson Corp 液晶表示装置
US5650637A (en) 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
JPS5980964A (ja) * 1982-11-01 1984-05-10 Toshiba Corp 光電変換素子
JPS59103382A (ja) * 1982-12-03 1984-06-14 Sanyo Electric Co Ltd フロ−テイングゲ−ト型不揮発性メモリ素子
JPH054280Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-04-17 1993-02-02
US4758869A (en) * 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US5034786A (en) * 1986-08-29 1991-07-23 Waferscale Integration, Inc. Opaque cover for preventing erasure of an EPROM
FR2619959B1 (fr) * 1987-08-31 1991-06-14 Thomson Semiconducteurs Circuit de detection de lumiere
JPH0799298A (ja) * 1993-09-28 1995-04-11 Sony Corp 固体撮像素子及びその製造方法
JP3697769B2 (ja) * 1995-02-24 2005-09-21 株式会社ニコン 光電変換素子及び光電変換装置
GB2319602B (en) * 1996-11-21 2000-10-04 Motorola Ltd Light detection device
US5917645A (en) * 1997-03-28 1999-06-29 Daewoo Electronics Co., Ltd. Thin film actuated mirror array in an optical projection system and method for manufacturing the same
JP4259979B2 (ja) 2003-10-22 2009-04-30 新光電気工業株式会社 光透過性カバー及びこれを備えたデバイス並びにそれらの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614865A1 (de) * 1967-09-27 1970-12-23 Telefunken Patent Optoelektronische Halbleiteranordnung
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
GB1392599A (en) * 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
JPS5036087A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-13 1975-04-04
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
JPS51120685A (en) * 1975-04-16 1976-10-22 Nippon Denso Co Ltd Semtconductor element
JPS5289480A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Semiconductive nonvoltile memory device
JPS52151576A (en) * 1976-06-11 1977-12-16 Matsushita Electric Ind Co Ltd Semiconductor device
US4326214A (en) * 1976-11-01 1982-04-20 National Semiconductor Corporation Thermal shock resistant package having an ultraviolet light transmitting window for a semiconductor chip
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
US4096512A (en) * 1977-03-09 1978-06-20 Rca Corp. Monolithic light detector
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
JPS582439B2 (ja) * 1978-11-27 1983-01-17 富士通株式会社 ブ−トストラツプ回路
US4536941A (en) * 1980-03-21 1985-08-27 Kuo Chang Kiang Method of making high density dynamic memory cell

Also Published As

Publication number Publication date
US4949152A (en) 1990-08-14
DE3115695A1 (de) 1982-02-04
JPS56150871A (en) 1981-11-21
GB2074788A (en) 1981-11-04
DE3115695C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-06-15

Similar Documents

Publication Publication Date Title
GB2075752B (en) Semiconductor integrated circuits
DE3162416D1 (en) Semiconductor integrated circuit device
GB2087183B (en) Semiconductor integrated circuit device
DE3279013D1 (en) Semiconductor integrated circuit
GB8500176D0 (en) Semiconductor integrated circuit
JPS5710977A (en) Semiconductor circuit
GB2069784B (en) Digital semiconductor integrated circuit
JPS571256A (en) Integrated circuit
GB2136649B (en) Integrated circuit
GB2091459B (en) Semiconductor integrated circuit
GB2089611B (en) Semiconductor integrated circuit device
DE3272424D1 (en) Semiconductor integrated circuit
GB2074788B (en) Semiconductor integrated circuit
GB2073947B (en) Integrated circuit encapsulation
DE3175781D1 (en) Integrated circuit
DE3175780D1 (en) Semiconductor integrated circuit devices
DE3264963D1 (en) Semiconductor integrated circuit
MY8600690A (en) Semiconductor integrated circuit device
GB2084397B (en) Semiconductor integrated circuit
JPS56122211A (en) Integrated circuit
GB2133929B (en) Semiconductor integrated circuit
DE3174824D1 (en) Semiconductor integrated circuit
JPS56120158A (en) Monolithic semiconductor integrated circuit
DE3167256D1 (en) Semiconductor integrated circuit
JPS56127998A (en) Integrated digital semiconductor circuit

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980403