DE3105819C2 - - Google Patents
Info
- Publication number
- DE3105819C2 DE3105819C2 DE3105819A DE3105819A DE3105819C2 DE 3105819 C2 DE3105819 C2 DE 3105819C2 DE 3105819 A DE3105819 A DE 3105819A DE 3105819 A DE3105819 A DE 3105819A DE 3105819 C2 DE3105819 C2 DE 3105819C2
- Authority
- DE
- Germany
- Prior art keywords
- amorphous
- film
- layer
- type
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 238000007733 ion plating Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 32
- 239000007789 gas Substances 0.000 description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000010276 construction Methods 0.000 description 10
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1995180A JPS56116673A (en) | 1980-02-19 | 1980-02-19 | Amorphous thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3105819A1 DE3105819A1 (de) | 1981-12-10 |
| DE3105819C2 true DE3105819C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-01-04 |
Family
ID=12013501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813105819 Granted DE3105819A1 (de) | 1980-02-19 | 1981-02-18 | Amorphe filmsolarzelle |
Country Status (3)
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3280026D1 (en) * | 1981-05-29 | 1989-12-21 | Kanegafuchi Chemical Ind | Process for preparing amorphous silicon semiconductor |
| US4490208A (en) * | 1981-07-08 | 1984-12-25 | Agency Of Industrial Science And Technology | Method of producing thin films of silicon |
| JPS5831585A (ja) * | 1981-08-19 | 1983-02-24 | Sanyo Electric Co Ltd | 受光装置 |
| US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
| US4536459A (en) * | 1982-03-12 | 1985-08-20 | Canon Kabushiki Kaisha | Photoconductive member having multiple amorphous layers |
| US4490454A (en) * | 1982-03-17 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member comprising multiple amorphous layers |
| JPS59218732A (ja) * | 1983-05-26 | 1984-12-10 | Fuji Electric Corp Res & Dev Ltd | 半導体保護膜形成方法 |
| US4761300A (en) * | 1983-06-29 | 1988-08-02 | Stauffer Chemical Company | Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer |
| US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
| JPS616874A (ja) * | 1984-06-20 | 1986-01-13 | Sanyo Electric Co Ltd | 光起電力素子 |
| US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
| JPH0752718B2 (ja) * | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
| US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US5427824A (en) * | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
| KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
| JP2686263B2 (ja) * | 1987-11-19 | 1997-12-08 | 株式会社日立製作所 | 放射線検出素子 |
| EP0317350B1 (en) * | 1987-11-20 | 1995-06-21 | Canon Kabushiki Kaisha | A pin function photovoltaic element, tandem und triple cells |
| DE3903699A1 (de) * | 1988-02-08 | 1989-08-17 | Ricoh Kk | Bildsensor |
| EP0377940B1 (en) * | 1989-01-13 | 1994-11-17 | Kabushiki Kaisha Toshiba | Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element |
| US5002618A (en) * | 1989-01-21 | 1991-03-26 | Canon Kabushiki Kaisha | Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film |
| US5002617A (en) * | 1989-01-21 | 1991-03-26 | Canon Kabushiki Kaisha | Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film |
| JP2744269B2 (ja) * | 1989-01-21 | 1998-04-28 | キヤノン株式会社 | 光起電力素子 |
| JPH02192771A (ja) * | 1989-01-21 | 1990-07-30 | Canon Inc | 光起電力素子 |
| US5007971A (en) * | 1989-01-21 | 1991-04-16 | Canon Kabushiki Kaisha | Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film |
| JP2829653B2 (ja) * | 1989-01-21 | 1998-11-25 | キヤノン株式会社 | 光起電力素子 |
| JP2744270B2 (ja) * | 1989-01-21 | 1998-04-28 | キヤノン株式会社 | 光起電力素子 |
| CA2070708C (en) * | 1991-08-08 | 1997-04-29 | Ichiro Kasai | Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface |
| US5501745A (en) * | 1994-05-31 | 1996-03-26 | Southwest Research Institute | Low temperature method for making a photovoltaic material |
| DE60126779T2 (de) | 2000-03-24 | 2007-12-13 | Cymbet Corp., Elk River | Herstellung bei niedriger temperatur von dünnschicht- energiespeichervorrichtungen |
| AU2003243467A1 (en) * | 2002-06-11 | 2003-12-22 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon St | Polycrystalline thin-film solar cells |
| AU2003248131A1 (en) * | 2002-07-29 | 2004-02-16 | National Institute Of Advanced Industrial Science And Technology | Thermoelectric transformation material containing nitrogen |
| US20060162767A1 (en) * | 2002-08-16 | 2006-07-27 | Angelo Mascarenhas | Multi-junction, monolithic solar cell with active silicon substrate |
| AU2003271105A1 (en) * | 2002-10-15 | 2004-05-04 | Sharp Kabushiki Kaisha | Sensitized dye solar cell and sensitized dye solar cell module |
| US7603144B2 (en) | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
| US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
| US7294209B2 (en) | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
| US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
| WO2005067645A2 (en) | 2004-01-06 | 2005-07-28 | Cymbet Corporation | Layered barrier structure having one or more definable layers and method |
| JP4063802B2 (ja) * | 2004-08-04 | 2008-03-19 | シャープ株式会社 | 光電極 |
| JP2009502011A (ja) | 2005-07-15 | 2009-01-22 | シンベット・コーポレイション | 軟質および硬質電解質層付き薄膜電池および方法 |
| US7776478B2 (en) | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
| CN101355109A (zh) * | 2007-07-26 | 2009-01-28 | 鸿富锦精密工业（深圳）有限公司 | 太阳能电池组件及其制造设备 |
| US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
| US20150122329A1 (en) * | 2011-11-07 | 2015-05-07 | International Business Machines Corporation | Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter |
| US9018517B2 (en) | 2011-11-07 | 2015-04-28 | International Business Machines Corporation | Silicon heterojunction photovoltaic device with wide band gap emitter |
| TWI506807B (zh) * | 2012-02-03 | 2015-11-01 | Chia Gee Wang | 太陽能電池製造方法 |
| CN102864439B (zh) * | 2012-09-03 | 2014-04-02 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种制备具有抗pid效应的减反射膜的方法 |
| CN104617167A (zh) * | 2013-11-01 | 2015-05-13 | 国际商业机器公司 | 形成光伏器件的方法以及光伏器件 |
| WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| US4264962A (en) * | 1978-02-07 | 1981-04-28 | Beam Engineering Kabushiki Kaisha | Small-sized electronic calculator |
| DE3032158A1 (de) * | 1979-08-30 | 1981-04-02 | Plessey Overseas Ltd., Ilford, Essex | Solarzelle |
-
1980
- 1980-02-19 JP JP1995180A patent/JPS56116673A/ja active Granted
-
1981
- 1981-02-18 DE DE19813105819 patent/DE3105819A1/de active Granted
- 1981-02-19 US US06/235,921 patent/US4365107A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56116673A (en) | 1981-09-12 |
| DE3105819A1 (de) | 1981-12-10 |
| JPS6239550B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-08-24 |
| US4365107A (en) | 1982-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |