DE3068717D1 - Semiconductor memory device with redundancy - Google Patents

Semiconductor memory device with redundancy

Info

Publication number
DE3068717D1
DE3068717D1 DE8080303939T DE3068717T DE3068717D1 DE 3068717 D1 DE3068717 D1 DE 3068717D1 DE 8080303939 T DE8080303939 T DE 8080303939T DE 3068717 T DE3068717 T DE 3068717T DE 3068717 D1 DE3068717 D1 DE 3068717D1
Authority
DE
Germany
Prior art keywords
redundancy
memory cell
memory device
semiconductor memory
decoders
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080303939T
Other languages
German (de)
English (en)
Inventor
Yoshihiro Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15648645&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3068717(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3068717D1 publication Critical patent/DE3068717D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
DE8080303939T 1979-11-13 1980-11-05 Semiconductor memory device with redundancy Expired DE3068717D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1979157393U JPS5928560Y2 (ja) 1979-11-13 1979-11-13 冗長ビットを有する記憶装置

Publications (1)

Publication Number Publication Date
DE3068717D1 true DE3068717D1 (en) 1984-08-30

Family

ID=15648645

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080303939T Expired DE3068717D1 (en) 1979-11-13 1980-11-05 Semiconductor memory device with redundancy

Country Status (4)

Country Link
US (1) US4365319A (enExample)
EP (1) EP0029322B1 (enExample)
JP (1) JPS5928560Y2 (enExample)
DE (1) DE3068717D1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563499A (en) * 1979-06-25 1981-01-14 Fujitsu Ltd Semiconductor memory device
US4489402A (en) * 1981-04-25 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
US4462091A (en) * 1982-02-26 1984-07-24 International Business Machines Corporation Word group redundancy scheme
JPS58164099A (ja) * 1982-03-25 1983-09-28 Toshiba Corp 半導体メモリ−
JPS58199496A (ja) * 1982-05-14 1983-11-19 Hitachi Ltd 欠陥救済回路を有する半導体メモリ
JPS5971199A (ja) * 1982-10-14 1984-04-21 Toshiba Corp 半導体メモリ装置
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
US4633429A (en) * 1982-12-27 1986-12-30 Motorola, Inc. Partial memory selection using a programmable decoder
US4556975A (en) * 1983-02-07 1985-12-03 Westinghouse Electric Corp. Programmable redundancy circuit
JPS59151398A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
US4577294A (en) * 1983-04-18 1986-03-18 Advanced Micro Devices, Inc. Redundant memory circuit and method of programming and verifying the circuit
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
JPS6143362A (ja) * 1984-08-07 1986-03-01 Nec Corp 集積回路装置
JPS6177946A (ja) * 1984-09-26 1986-04-21 Hitachi Ltd 半導体記憶装置
US4796233A (en) * 1984-10-19 1989-01-03 Fujitsu Limited Bipolar-transistor type semiconductor memory device having redundancy configuration
US4744060A (en) * 1984-10-19 1988-05-10 Fujitsu Limited Bipolar-transistor type random access memory having redundancy configuration
US4740925A (en) * 1985-10-15 1988-04-26 Texas Instruments Incorporated Extra row for testing programmability and speed of ROMS
JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
JPS6337899A (ja) * 1986-07-30 1988-02-18 Mitsubishi Electric Corp 半導体記憶装置
EP0257120B1 (de) * 1986-08-22 1992-06-10 International Business Machines Corporation Dekodierverfahren und -Schaltungsanordnung für einen redundanten CMOS-Halbleiterspeicher
FR2608826B1 (fr) * 1986-12-19 1989-03-17 Eurotechnique Sa Circuit integre comportant des elements d'aiguillage vers des elements de redondance dans une memoire
US5191224A (en) * 1987-04-22 1993-03-02 Hitachi, Ltd. Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein
FR2623653B1 (fr) * 1987-11-24 1992-10-23 Sgs Thomson Microelectronics Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant
US4885720A (en) * 1988-04-01 1989-12-05 International Business Machines Corporation Memory device and method implementing wordline redundancy without an access time penalty
US5022006A (en) * 1988-04-01 1991-06-04 International Business Machines Corporation Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells
US5289417A (en) * 1989-05-09 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with redundancy circuit
JP2547633B2 (ja) * 1989-05-09 1996-10-23 三菱電機株式会社 半導体記憶装置
DE69129882T2 (de) * 1990-06-19 1999-03-04 Texas Instruments Inc., Dallas, Tex. Assoziatives DRAM-Redundanzschema mit variabler Satzgrösse
JP2600018B2 (ja) * 1990-09-29 1997-04-16 三菱電機株式会社 半導体記憶装置
DE69117926D1 (de) * 1991-03-29 1996-04-18 Ibm Speichersystem mit anpassbarer Redundanz
JP2738195B2 (ja) * 1991-12-27 1998-04-08 日本電気株式会社 不揮発性半導体記憶装置
US5557618A (en) * 1993-01-19 1996-09-17 Tektronix, Inc. Signal sampling circuit with redundancy
EP0657814B1 (en) * 1993-12-07 1999-03-17 STMicroelectronics S.r.l. Redundancy circuitry for a semiconductor memory device
US5568433A (en) * 1995-06-19 1996-10-22 International Business Machines Corporation Memory array having redundant word line
EP0798642B1 (en) * 1996-03-29 2001-11-07 STMicroelectronics S.r.l. Redundancy management method and architecture, particularly for non-volatile memories
WO2004090910A1 (en) * 2003-04-07 2004-10-21 Koninklijke Philips Electronics N.V. Semiconductor memory device having redundancy means
US10896127B2 (en) 2013-01-23 2021-01-19 Lucata Corporation Highly configurable memory architecture for partitioned global address space memory systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753244A (en) * 1971-08-18 1973-08-14 Ibm Yield enhancement redundancy technique
BE789991A (fr) * 1971-10-12 1973-04-12 Siemens Ag Dispositif logique, en particulier decodeur a elements redondants
US4051354A (en) * 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array

Also Published As

Publication number Publication date
US4365319A (en) 1982-12-21
EP0029322B1 (en) 1984-07-25
JPS5677100U (enExample) 1981-06-23
JPS5928560Y2 (ja) 1984-08-17
EP0029322A1 (en) 1981-05-27

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Legal Events

Date Code Title Description
8331 Complete revocation