DE3675815D1 - Halbleiterspeichergeraet mit diodenmatrixdecodierer und redundanzkonfiguration. - Google Patents

Halbleiterspeichergeraet mit diodenmatrixdecodierer und redundanzkonfiguration.

Info

Publication number
DE3675815D1
DE3675815D1 DE8686303761T DE3675815T DE3675815D1 DE 3675815 D1 DE3675815 D1 DE 3675815D1 DE 8686303761 T DE8686303761 T DE 8686303761T DE 3675815 T DE3675815 T DE 3675815T DE 3675815 D1 DE3675815 D1 DE 3675815D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
diode matrix
matrix decoder
redundancy configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686303761T
Other languages
English (en)
Inventor
Tomoharu Awaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3675815D1 publication Critical patent/DE3675815D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
DE8686303761T 1985-05-20 1986-05-16 Halbleiterspeichergeraet mit diodenmatrixdecodierer und redundanzkonfiguration. Expired - Fee Related DE3675815D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60105902A JPS61292296A (ja) 1985-05-20 1985-05-20 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3675815D1 true DE3675815D1 (de) 1991-01-10

Family

ID=14419811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686303761T Expired - Fee Related DE3675815D1 (de) 1985-05-20 1986-05-16 Halbleiterspeichergeraet mit diodenmatrixdecodierer und redundanzkonfiguration.

Country Status (5)

Country Link
US (1) US4757475A (de)
EP (1) EP0202892B1 (de)
JP (1) JPS61292296A (de)
KR (1) KR900001599B1 (de)
DE (1) DE3675815D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905200A (en) * 1988-08-29 1990-02-27 Ford Motor Company Apparatus and method for correcting microcomputer software errors
US5276834A (en) * 1990-12-04 1994-01-04 Micron Technology, Inc. Spare memory arrangement
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US7593256B2 (en) * 2006-03-28 2009-09-22 Contour Semiconductor, Inc. Memory array with readout isolation
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US7933133B2 (en) 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753244A (en) * 1971-08-18 1973-08-14 Ibm Yield enhancement redundancy technique
US4027285A (en) * 1973-12-26 1977-05-31 Motorola, Inc. Decode circuitry for bipolar random access memory
JPS58115828A (ja) * 1981-12-29 1983-07-09 Fujitsu Ltd 半導体集積回路
US4462091A (en) * 1982-02-26 1984-07-24 International Business Machines Corporation Word group redundancy scheme

Also Published As

Publication number Publication date
KR900001599B1 (ko) 1990-03-15
EP0202892A2 (de) 1986-11-26
JPS61292296A (ja) 1986-12-23
EP0202892A3 (en) 1988-09-07
US4757475A (en) 1988-07-12
EP0202892B1 (de) 1990-11-28
KR860009425A (ko) 1986-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee