DE3051043C2 - Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen Substratkristall - Google Patents
Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen SubstratkristallInfo
- Publication number
- DE3051043C2 DE3051043C2 DE19803051043 DE3051043A DE3051043C2 DE 3051043 C2 DE3051043 C2 DE 3051043C2 DE 19803051043 DE19803051043 DE 19803051043 DE 3051043 A DE3051043 A DE 3051043A DE 3051043 C2 DE3051043 C2 DE 3051043C2
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- substrate
- normal
- growth
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 14
- 229910052596 spinel Inorganic materials 0.000 title claims description 14
- 239000011029 spinel Substances 0.000 title claims description 14
- 229910000859 α-Fe Inorganic materials 0.000 title claims description 9
- 239000000155 melt Substances 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 4
- ZBFOLPMOGPIUGP-UHFFFAOYSA-N dizinc;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Zn+2].[Zn+2] ZBFOLPMOGPIUGP-UHFFFAOYSA-N 0.000 claims 1
- 239000011701 zinc Substances 0.000 description 6
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910000464 lead oxide Inorganic materials 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- 229910001308 Zinc ferrite Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- WGEATSXPYVGFCC-UHFFFAOYSA-N zinc ferrite Chemical compound O=[Zn].O=[Fe]O[Fe]=O WGEATSXPYVGFCC-UHFFFAOYSA-N 0.000 description 2
- 238000001691 Bridgeman technique Methods 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910001289 Manganese-zinc ferrite Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910001053 Nickel-zinc ferrite Inorganic materials 0.000 description 1
- 229910003080 TiO4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JIYIUPFAJUGHNL-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[Mn++].[Mn++].[Mn++].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Zn++].[Zn++] Chemical compound [O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[Mn++].[Mn++].[Mn++].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Zn++].[Zn++] JIYIUPFAJUGHNL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052566 spinel group Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
- -1 zinc titanate Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7901629A NL7901629A (nl) | 1979-03-01 | 1979-03-01 | Werkwijze voor het vormen van monokristallijne laag van een magnetisch ijzeroxyde met spinel of granaat- structuur. |
| NL7905544A NL7905544A (nl) | 1979-03-01 | 1979-07-17 | Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3051043C2 true DE3051043C2 (de) | 1986-10-09 |
Family
ID=26645502
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803051043 Expired DE3051043C2 (de) | 1979-03-01 | 1980-03-03 | Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen Substratkristall |
| DE3008040A Expired DE3008040C2 (de) | 1979-03-01 | 1980-03-03 | Verfahren zum epitaktischen Aufwachsen einer einkristallinen Seltenerdmetall-Eisen-granat-Schicht auf einem einkristallinen Seltenerdmetall-Gallium-granat-Substrat |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3008040A Expired DE3008040C2 (de) | 1979-03-01 | 1980-03-03 | Verfahren zum epitaktischen Aufwachsen einer einkristallinen Seltenerdmetall-Eisen-granat-Schicht auf einem einkristallinen Seltenerdmetall-Gallium-granat-Substrat |
Country Status (4)
| Country | Link |
|---|---|
| DE (2) | DE3051043C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2450291A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2044629B (enrdf_load_stackoverflow) |
| NL (1) | NL7905544A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698944A (en) * | 1970-06-15 | 1972-10-17 | Texas Instruments Inc | Method of obtaining phased growth of epitaxial layers |
| NL7510931A (nl) * | 1974-09-17 | 1976-03-19 | Hitachi Ltd | Werkwijze voor het vervaardigen van nikkelzink- ferriet door epitaxiaal groeien in de vloeibare fase. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4050964A (en) * | 1975-12-01 | 1977-09-27 | Bell Telephone Laboratories, Incorporated | Growing smooth epitaxial layers on misoriented substrates |
-
1979
- 1979-07-17 NL NL7905544A patent/NL7905544A/nl not_active Application Discontinuation
-
1980
- 1980-02-27 GB GB8006635A patent/GB2044629B/en not_active Expired
- 1980-02-29 FR FR8004594A patent/FR2450291A1/fr active Granted
- 1980-03-03 DE DE19803051043 patent/DE3051043C2/de not_active Expired
- 1980-03-03 DE DE3008040A patent/DE3008040C2/de not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698944A (en) * | 1970-06-15 | 1972-10-17 | Texas Instruments Inc | Method of obtaining phased growth of epitaxial layers |
| NL7510931A (nl) * | 1974-09-17 | 1976-03-19 | Hitachi Ltd | Werkwijze voor het vervaardigen van nikkelzink- ferriet door epitaxiaal groeien in de vloeibare fase. |
Non-Patent Citations (1)
| Title |
|---|
| NL-Z: J. Crystal Growth, 17, 1972, 302-311 * |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7905544A (nl) | 1980-09-03 |
| GB2044629B (en) | 1983-02-09 |
| FR2450291B1 (enrdf_load_stackoverflow) | 1982-11-26 |
| FR2450291A1 (fr) | 1980-09-26 |
| GB2044629A (en) | 1980-10-22 |
| DE3008040A1 (de) | 1980-09-11 |
| DE3008040C2 (de) | 1986-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3219780C2 (enrdf_load_stackoverflow) | ||
| EP0033990B1 (de) | Magnetische Anordnung | |
| DE2925348A1 (de) | Temperaturstabilisierte ferritschichten mit niedrigen verlusten | |
| DE2909280A1 (de) | Magnetkopf fuer die aufnahme und wiedergabe von signalen sowie verfahren zur herstellung des magnetkopfs | |
| DE2829552A1 (de) | Epitaxialwachstum von m-typ-hexagonalferritschichten auf spinellsubstraten und dessen erzeugnis | |
| CH619066A5 (enrdf_load_stackoverflow) | ||
| DE3051043C2 (de) | Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen Substratkristall | |
| DE3111657A1 (de) | Verfahren zur herstellung von magnetfilmsubstrat-zusammensetzungen | |
| DE69503153T2 (de) | Faraday Rotador für optischen Isolator | |
| EP0023063B1 (de) | Einkristall auf der Basis von Seltenerdmetall-Gallium-Granat und magnetische Dünnschichtanordnung mit einem monokristallinen Granat-Substrat | |
| DE3447700C2 (enrdf_load_stackoverflow) | ||
| DE19529167A1 (de) | Weichmagnetischer Dünnfilm sowie Magnetkopf und magnetisches Aufzeichnungsgerät unter Verwendung eines solchen | |
| EP0170309B1 (de) | Einkristall auf Basis von Seltenerdmetall-Gallium-Granat | |
| DE2027082A1 (de) | Magnetischer Abtastkopf mit Ferriteinkristall | |
| DE69508469T2 (de) | Oxyde-Granat-Einkristall | |
| DE3812657A1 (de) | Verfahren zur herstellung von magnetkoepfen | |
| DE2349348C2 (de) | Verfahren zum Züchten einer einkristallinen, wismutdotierten Yttrium- oder Seltenerdmetall-Eisen-Granatschicht | |
| EP1115677B1 (de) | Verfahren zum ausheilen von rissen in keramischen formkörpern und derart behandelte formkörper | |
| EP0383400B1 (de) | Verfahren zur Züchtung von Mischkristallen aus Schmelzen oxidischer Vielstoffsysteme | |
| DE3008706C2 (enrdf_load_stackoverflow) | ||
| DE3005219C2 (de) | Hexagonaler Mischkristall der allgemeinen Formel A↑2↑↑+↑↓1↓↓+↓↓y↓Ga↓1↓↓2↓↓-↓↓2↓↓x↓↓-↓↓y↓B↑2↑↑+↑↓x↓C↑4↑↑+↑↓x↓O↓1↓↓9↓ | |
| DE3012180A1 (de) | Verfahren zum erzeugen von ferrit- einkristallen | |
| DE3011037A1 (de) | Magnetische blasendomaenenstruktur und magnetische blasendomaenenanordnung | |
| DE3005195A1 (de) | Magnetische anordnung | |
| DE2928176A1 (de) | Einkristall auf der basis von seltenerdmetall-gallium-granat |