FR2450291A1 - Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat - Google Patents

Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat

Info

Publication number
FR2450291A1
FR2450291A1 FR8004594A FR8004594A FR2450291A1 FR 2450291 A1 FR2450291 A1 FR 2450291A1 FR 8004594 A FR8004594 A FR 8004594A FR 8004594 A FR8004594 A FR 8004594A FR 2450291 A1 FR2450291 A1 FR 2450291A1
Authority
FR
France
Prior art keywords
substrate
grenate
spinel
forming
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8004594A
Other languages
English (en)
French (fr)
Other versions
FR2450291B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7901629A external-priority patent/NL7901629A/nl
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2450291A1 publication Critical patent/FR2450291A1/fr
Application granted granted Critical
Publication of FR2450291B1 publication Critical patent/FR2450291B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR8004594A 1979-03-01 1980-02-29 Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat Granted FR2450291A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7901629A NL7901629A (nl) 1979-03-01 1979-03-01 Werkwijze voor het vormen van monokristallijne laag van een magnetisch ijzeroxyde met spinel of granaat- structuur.
NL7905544A NL7905544A (nl) 1979-03-01 1979-07-17 Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.

Publications (2)

Publication Number Publication Date
FR2450291A1 true FR2450291A1 (fr) 1980-09-26
FR2450291B1 FR2450291B1 (enrdf_load_stackoverflow) 1982-11-26

Family

ID=26645502

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8004594A Granted FR2450291A1 (fr) 1979-03-01 1980-02-29 Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat

Country Status (4)

Country Link
DE (2) DE3051043C2 (enrdf_load_stackoverflow)
FR (1) FR2450291A1 (enrdf_load_stackoverflow)
GB (1) GB2044629B (enrdf_load_stackoverflow)
NL (1) NL7905544A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2333567A1 (fr) * 1975-12-01 1977-07-01 Western Electric Co Procede de croissance de couches epitaxiales lisses sur des substrats desorientes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698944A (en) * 1970-06-15 1972-10-17 Texas Instruments Inc Method of obtaining phased growth of epitaxial layers
JPS5133898A (enrdf_load_stackoverflow) * 1974-09-17 1976-03-23 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2333567A1 (fr) * 1975-12-01 1977-07-01 Western Electric Co Procede de croissance de couches epitaxiales lisses sur des substrats desorientes

Also Published As

Publication number Publication date
NL7905544A (nl) 1980-09-03
GB2044629B (en) 1983-02-09
FR2450291B1 (enrdf_load_stackoverflow) 1982-11-26
GB2044629A (en) 1980-10-22
DE3008040A1 (de) 1980-09-11
DE3051043C2 (de) 1986-10-09
DE3008040C2 (de) 1986-12-04

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Legal Events

Date Code Title Description
ST Notification of lapse