GB2044629B - Growth of monocrystalline spinel or garnet layers - Google Patents

Growth of monocrystalline spinel or garnet layers

Info

Publication number
GB2044629B
GB2044629B GB8006635A GB8006635A GB2044629B GB 2044629 B GB2044629 B GB 2044629B GB 8006635 A GB8006635 A GB 8006635A GB 8006635 A GB8006635 A GB 8006635A GB 2044629 B GB2044629 B GB 2044629B
Authority
GB
United Kingdom
Prior art keywords
growth
garnet layers
spinel
monocrystalline
monocrystalline spinel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8006635A
Other languages
English (en)
Other versions
GB2044629A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7901629A external-priority patent/NL7901629A/nl
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2044629A publication Critical patent/GB2044629A/en
Application granted granted Critical
Publication of GB2044629B publication Critical patent/GB2044629B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB8006635A 1979-03-01 1980-02-27 Growth of monocrystalline spinel or garnet layers Expired GB2044629B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7901629A NL7901629A (nl) 1979-03-01 1979-03-01 Werkwijze voor het vormen van monokristallijne laag van een magnetisch ijzeroxyde met spinel of granaat- structuur.
NL7905544A NL7905544A (nl) 1979-03-01 1979-07-17 Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.

Publications (2)

Publication Number Publication Date
GB2044629A GB2044629A (en) 1980-10-22
GB2044629B true GB2044629B (en) 1983-02-09

Family

ID=26645502

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8006635A Expired GB2044629B (en) 1979-03-01 1980-02-27 Growth of monocrystalline spinel or garnet layers

Country Status (4)

Country Link
DE (2) DE3008040C2 (enrdf_load_stackoverflow)
FR (1) FR2450291A1 (enrdf_load_stackoverflow)
GB (1) GB2044629B (enrdf_load_stackoverflow)
NL (1) NL7905544A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698944A (en) * 1970-06-15 1972-10-17 Texas Instruments Inc Method of obtaining phased growth of epitaxial layers
JPS5133898A (enrdf_load_stackoverflow) * 1974-09-17 1976-03-23 Hitachi Ltd
US4050964A (en) * 1975-12-01 1977-09-27 Bell Telephone Laboratories, Incorporated Growing smooth epitaxial layers on misoriented substrates

Also Published As

Publication number Publication date
FR2450291B1 (enrdf_load_stackoverflow) 1982-11-26
DE3008040A1 (de) 1980-09-11
DE3008040C2 (de) 1986-12-04
DE3051043C2 (de) 1986-10-09
GB2044629A (en) 1980-10-22
NL7905544A (nl) 1980-09-03
FR2450291A1 (fr) 1980-09-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee