DE3050770C2 - Verfahren zur Herstellung eines Varistors - Google Patents
Verfahren zur Herstellung eines VaristorsInfo
- Publication number
- DE3050770C2 DE3050770C2 DE19803050770 DE3050770A DE3050770C2 DE 3050770 C2 DE3050770 C2 DE 3050770C2 DE 19803050770 DE19803050770 DE 19803050770 DE 3050770 A DE3050770 A DE 3050770A DE 3050770 C2 DE3050770 C2 DE 3050770C2
- Authority
- DE
- Germany
- Prior art keywords
- sintered body
- electrodes
- electrode
- varistor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000004408 titanium dioxide Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- 238000007772 electroless plating Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000009022 nonlinear effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000009021 linear effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000002431 foraging effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- -1 hypophosphite ions Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54013869A JPS5816602B2 (ja) | 1979-02-09 | 1979-02-09 | 電圧非直線性抵抗素子 |
| JP2161079A JPS55115276A (en) | 1979-02-26 | 1979-02-26 | Voltage nonnlinear resistance element |
| JP15790079A JPS5680101A (en) | 1979-12-05 | 1979-12-05 | Voltage nonnlinear resistor and method of manufacturing same |
| JP16737779A JPS5690502A (en) | 1979-12-22 | 1979-12-22 | Voltage nonnlinear resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3050770C2 true DE3050770C2 (de) | 1987-03-19 |
Family
ID=27456088
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803050770 Expired DE3050770C2 (de) | 1979-02-09 | 1980-02-08 | Verfahren zur Herstellung eines Varistors |
| DE19803004736 Expired DE3004736C2 (de) | 1979-02-09 | 1980-02-08 | Varistor und Verfahren zu seiner Herstellung |
| DE19808003393 Expired DE8003393U1 (de) | 1979-02-09 | 1980-02-08 | Nicht-lineares widerstandselement |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803004736 Expired DE3004736C2 (de) | 1979-02-09 | 1980-02-08 | Varistor und Verfahren zu seiner Herstellung |
| DE19808003393 Expired DE8003393U1 (de) | 1979-02-09 | 1980-02-08 | Nicht-lineares widerstandselement |
Country Status (2)
| Country | Link |
|---|---|
| DE (3) | DE3050770C2 (US06633782-20031014-M00005.png) |
| GB (1) | GB2044531B (US06633782-20031014-M00005.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8418779D0 (en) * | 1984-07-24 | 1984-08-30 | Bowthorpe Emp Ltd | Electrical surge protection |
| DE3638342A1 (de) * | 1986-11-10 | 1988-05-19 | Siemens Ag | Elektrisches bauelement aus keramik mit mehrlagenmetallisierung und verfahren zu seiner herstellung |
| US5614074A (en) * | 1994-12-09 | 1997-03-25 | Harris Corporation | Zinc phosphate coating for varistor and method |
| ATE195198T1 (de) * | 1996-05-09 | 2000-08-15 | Littlefuse Inc | Zink-phosphatbeschichtung für varistor und verfahren zur herstellung |
| JP3804539B2 (ja) * | 2001-04-10 | 2006-08-02 | 株式会社村田製作所 | セラミック電子部品 |
| EP2901492A4 (en) * | 2012-09-25 | 2016-06-22 | Pst Sensors Pty Ltd | POWER CIRCUIT TRANSISTOR |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1283073B (de) * | 1963-04-05 | 1968-11-14 | Siemens Ag | Verfahren zur chemischen Abscheidung von haftfesten Legierungsschichten, z. B. Nickel-Phosphor-Schichten, mit stabilisierten elektrischen Widerstandswerten auf elektrisch nichtleitenden Unterlagen |
| DE1690507B2 (de) * | 1966-09-27 | 1972-09-21 | Welwyn Electric Ltd., Bedlington, Northumberland (Grossbritannien) | Elektrisches schicht-widerstandselement und verfahren zu dessen herstellung |
| DE1665878B2 (de) * | 1967-02-22 | 1972-12-21 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zum chemischen aufbringen von kontaktmetallschichten an den kontaktierungsenden von schichtwiderstaenden |
| US3715701A (en) * | 1970-03-05 | 1973-02-06 | Philips Corp | Non-linear resistance element |
| DE1802452B2 (de) * | 1967-10-09 | 1973-04-26 | Matsushita Electric Industrial Co , Ltd , Kadoma, Osaka (Japan) | Spannungsabhaengiger massenwiderstand und verfahren zu seiner herstellung |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE859916C (de) * | 1948-10-01 | 1952-10-30 | Siemens S. Halske Aktiengesellschaft Berlin und München | Aus Metalloxyd bestehender Halbleiter |
| DE1690507U (de) | 1954-10-01 | 1955-01-05 | Helmut Schmiedel | Anordnung an kraftfahrzeugen. |
| DE1100772B (de) * | 1957-02-05 | 1961-03-02 | Kanthal Ab | Flammgespritzter elektrischer Widerstand |
| DE1089868B (de) | 1957-10-19 | 1960-09-29 | Philips Patentverwaltung | Anordnung zur Unterdrueckung von Funkenbildung bei elektrischen Kollektor-Maschinen |
| DE1270661B (de) * | 1963-02-22 | 1968-06-20 | Steatit Magnesia Ag | Verfahren zur Herstellung von Schichtwiderstaenden |
| US3676211A (en) * | 1970-01-02 | 1972-07-11 | Texas Instruments Inc | Contact system for electrically conductive ceramic-like material |
| US3768058A (en) | 1971-07-22 | 1973-10-23 | Gen Electric | Metal oxide varistor with laterally spaced electrodes |
| DE2528090C2 (de) | 1974-07-01 | 1985-06-05 | General Electric Co., Schenectady, N.Y. | Mehrphasen-Stoßspannungsunterdrücker |
-
1980
- 1980-02-08 DE DE19803050770 patent/DE3050770C2/de not_active Expired
- 1980-02-08 DE DE19803004736 patent/DE3004736C2/de not_active Expired
- 1980-02-08 GB GB8004324A patent/GB2044531B/en not_active Expired
- 1980-02-08 DE DE19808003393 patent/DE8003393U1/de not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1283073B (de) * | 1963-04-05 | 1968-11-14 | Siemens Ag | Verfahren zur chemischen Abscheidung von haftfesten Legierungsschichten, z. B. Nickel-Phosphor-Schichten, mit stabilisierten elektrischen Widerstandswerten auf elektrisch nichtleitenden Unterlagen |
| DE1690507B2 (de) * | 1966-09-27 | 1972-09-21 | Welwyn Electric Ltd., Bedlington, Northumberland (Grossbritannien) | Elektrisches schicht-widerstandselement und verfahren zu dessen herstellung |
| DE1665878B2 (de) * | 1967-02-22 | 1972-12-21 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zum chemischen aufbringen von kontaktmetallschichten an den kontaktierungsenden von schichtwiderstaenden |
| DE1802452B2 (de) * | 1967-10-09 | 1973-04-26 | Matsushita Electric Industrial Co , Ltd , Kadoma, Osaka (Japan) | Spannungsabhaengiger massenwiderstand und verfahren zu seiner herstellung |
| US3715701A (en) * | 1970-03-05 | 1973-02-06 | Philips Corp | Non-linear resistance element |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2044531A (en) | 1980-10-15 |
| DE3004736C2 (de) | 1986-08-21 |
| DE8003393U1 (de) | 1984-04-05 |
| DE3004736A1 (de) | 1980-08-21 |
| GB2044531B (en) | 1983-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 3004736 |
|
| 8181 | Inventor (new situation) |
Free format text: MIYABAYASHI, SUSUMU, MISATO, SAITAMA, JP KAZI, TAKEYUKI, AKIRA, JP SASAKI, NOBUYOSHI, AKITA, JP |
|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: TDK CORPORATION, TOKIO/TOKYO, JP |
|
| AC | Divided out of |
Ref country code: DE Ref document number: 3004736 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |