DE3043289C2 - - Google Patents
Info
- Publication number
- DE3043289C2 DE3043289C2 DE3043289A DE3043289A DE3043289C2 DE 3043289 C2 DE3043289 C2 DE 3043289C2 DE 3043289 A DE3043289 A DE 3043289A DE 3043289 A DE3043289 A DE 3043289A DE 3043289 C2 DE3043289 C2 DE 3043289C2
- Authority
- DE
- Germany
- Prior art keywords
- walls
- layer
- active layer
- resist
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000007738 vacuum evaporation Methods 0.000 claims description 11
- 238000001771 vacuum deposition Methods 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910000990 Ni alloy Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14981879A JPS5671981A (en) | 1979-11-19 | 1979-11-19 | Preparation method of semiconductor system |
| JP15044479A JPS5673474A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3043289A1 DE3043289A1 (de) | 1981-05-27 |
| DE3043289C2 true DE3043289C2 (en, 2012) | 1993-07-15 |
Family
ID=26479588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803043289 Granted DE3043289A1 (de) | 1979-11-19 | 1980-11-17 | Herstellungverfahren fuer eine halbleitereinrichtung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4377899A (en, 2012) |
| DE (1) | DE3043289A1 (en, 2012) |
| FR (1) | FR2474761B1 (en, 2012) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587540A (en) * | 1982-04-05 | 1986-05-06 | International Business Machines Corporation | Vertical MESFET with mesa step defining gate length |
| US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
| US4536942A (en) * | 1982-12-09 | 1985-08-27 | Cornell Research Foundation, Inc. | Fabrication of T-shaped metal lines for semiconductor devices |
| US4551905A (en) * | 1982-12-09 | 1985-11-12 | Cornell Research Foundation, Inc. | Fabrication of metal lines for semiconductor devices |
| US4673960A (en) * | 1982-12-09 | 1987-06-16 | Cornell Research Foundation, Inc. | Fabrication of metal lines for semiconductor devices |
| JPS59114871A (ja) * | 1982-12-21 | 1984-07-03 | Toshiba Corp | シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法 |
| US4545109A (en) * | 1983-01-21 | 1985-10-08 | Rca Corporation | Method of making a gallium arsenide field effect transistor |
| US4651179A (en) * | 1983-01-21 | 1987-03-17 | Rca Corporation | Low resistance gallium arsenide field effect transistor |
| US4587709A (en) * | 1983-06-06 | 1986-05-13 | International Business Machines Corporation | Method of making short channel IGFET |
| US4532698A (en) * | 1984-06-22 | 1985-08-06 | International Business Machines Corporation | Method of making ultrashort FET using oblique angle metal deposition and ion implantation |
| JPS61202426A (ja) * | 1985-03-05 | 1986-09-08 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| EP0233862A1 (en) * | 1985-08-27 | 1987-09-02 | LOCKHEED MISSILES & SPACE COMPANY, INC. | Gate alignment procedure in fabricating semiconductor devices |
| US4640003A (en) * | 1985-09-30 | 1987-02-03 | The United States Of America As Represented By The Secretary Of The Navy | Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment |
| FR2592220B1 (fr) * | 1985-12-20 | 1988-02-05 | Thomson Csf | Procede de realisation d'electrodes alignees par rapport a un niveau d'implantation dans un substrat et procede de realisation d'un filtre a transfert de charges |
| US4771012A (en) * | 1986-06-13 | 1988-09-13 | Matsushita Electric Industrial Co., Ltd. | Method of making symmetrically controlled implanted regions using rotational angle of the substrate |
| USRE35036E (en) * | 1986-06-13 | 1995-09-12 | Matsushita Electric Industrial Co., Ltd. | Method of making symmetrically controlled implanted regions using rotational angle of the substrate |
| JPS63132452A (ja) * | 1986-11-24 | 1988-06-04 | Mitsubishi Electric Corp | パタ−ン形成方法 |
| JP2735041B2 (ja) * | 1995-07-28 | 1998-04-02 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| DE19631744C1 (de) * | 1996-08-06 | 1998-03-12 | Siemens Ag | Verfahren zur Herstellung eines Feldeffekttransistors |
| JP3209169B2 (ja) * | 1997-11-28 | 2001-09-17 | 日本電気株式会社 | ゲート電極の形成方法 |
| US9728444B2 (en) * | 2015-12-31 | 2017-08-08 | International Business Machines Corporation | Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387360A (en) * | 1965-04-01 | 1968-06-11 | Sony Corp | Method of making a semiconductor device |
| US3676732A (en) * | 1969-09-08 | 1972-07-11 | Columbia Broadcasting Syst Inc | Photo-electronic imaging apparatus |
| US3994758A (en) * | 1973-03-19 | 1976-11-30 | Nippon Electric Company, Ltd. | Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection |
| US3851379A (en) * | 1973-05-16 | 1974-12-03 | Westinghouse Electric Corp | Solid state components |
| US3898353A (en) * | 1974-10-03 | 1975-08-05 | Us Army | Self aligned drain and gate field effect transistor |
| US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
| US4048646A (en) * | 1975-02-26 | 1977-09-13 | Nippon Electric Company, Limited | Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same |
| US4265934A (en) * | 1975-12-12 | 1981-05-05 | Hughes Aircraft Company | Method for making improved Schottky-barrier gate gallium arsenide field effect devices |
| US4232439A (en) * | 1976-11-30 | 1980-11-11 | Vlsi Technology Research Association | Masking technique usable in manufacturing semiconductor devices |
| US4222164A (en) * | 1978-12-29 | 1980-09-16 | International Business Machines Corporation | Method of fabrication of self-aligned metal-semiconductor field effect transistors |
-
1980
- 1980-11-12 US US06/206,215 patent/US4377899A/en not_active Expired - Lifetime
- 1980-11-17 DE DE19803043289 patent/DE3043289A1/de active Granted
- 1980-11-18 FR FR8024416A patent/FR2474761B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2474761B1 (fr) | 1985-10-04 |
| US4377899A (en) | 1983-03-29 |
| FR2474761A1 (fr) | 1981-07-31 |
| DE3043289A1 (de) | 1981-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |