DE3029055A1 - Verfahren zum herstellen einer polykristallinen siliziumschicht - Google Patents
Verfahren zum herstellen einer polykristallinen siliziumschichtInfo
- Publication number
- DE3029055A1 DE3029055A1 DE19803029055 DE3029055A DE3029055A1 DE 3029055 A1 DE3029055 A1 DE 3029055A1 DE 19803029055 DE19803029055 DE 19803029055 DE 3029055 A DE3029055 A DE 3029055A DE 3029055 A1 DE3029055 A1 DE 3029055A1
- Authority
- DE
- Germany
- Prior art keywords
- polycrystalline silicon
- layer
- boron
- doped
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920001296 polysiloxane Polymers 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 37
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 29
- 229910052796 boron Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 3
- 238000005496 tempering Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000010979 ruby Substances 0.000 description 5
- 229910001750 ruby Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/065,437 US4229502A (en) | 1979-08-10 | 1979-08-10 | Low-resistivity polycrystalline silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3029055A1 true DE3029055A1 (de) | 1981-02-26 |
Family
ID=22062724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803029055 Withdrawn DE3029055A1 (de) | 1979-08-10 | 1980-07-31 | Verfahren zum herstellen einer polykristallinen siliziumschicht |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4229502A (enExample) |
| JP (1) | JPS5629321A (enExample) |
| DE (1) | DE3029055A1 (enExample) |
| FR (1) | FR2463507A1 (enExample) |
| GB (1) | GB2056173B (enExample) |
| IT (1) | IT1131995B (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633822A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Preparation of semiconductor device |
| JPS5688818A (en) * | 1979-12-17 | 1981-07-18 | Hitachi Ltd | Polycrystalline silicon membrane and its production |
| US4803528A (en) * | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
| US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
| US4395467A (en) * | 1981-12-30 | 1983-07-26 | Rca Corporation | Transparent conductive film having areas of high and low resistivity |
| US4467519A (en) * | 1982-04-01 | 1984-08-28 | International Business Machines Corporation | Process for fabricating polycrystalline silicon film resistors |
| US4475955A (en) * | 1982-12-06 | 1984-10-09 | Harris Corporation | Method for forming integrated circuits bearing polysilicon of reduced resistance |
| US4472210A (en) * | 1983-01-07 | 1984-09-18 | Rca Corporation | Method of making a semiconductor device to improve conductivity of amorphous silicon films |
| US4559102A (en) * | 1983-05-09 | 1985-12-17 | Sony Corporation | Method for recrystallizing a polycrystalline, amorphous or small grain material |
| JPH0638496B2 (ja) * | 1983-06-27 | 1994-05-18 | 日本電気株式会社 | 半導体装置 |
| JPS6165441A (ja) * | 1984-09-07 | 1986-04-04 | Mitsubishi Electric Corp | プラズマ窒化シリコン絶縁膜の処理方法 |
| US4551352A (en) * | 1985-01-17 | 1985-11-05 | Rca Corporation | Method of making P-type hydrogenated amorphous silicon |
| GB8504725D0 (en) * | 1985-02-23 | 1985-03-27 | Standard Telephones Cables Ltd | Integrated circuits |
| GB2191510A (en) * | 1986-04-16 | 1987-12-16 | Gen Electric Plc | Depositing doped polysilicon films |
| JP2821117B2 (ja) * | 1986-11-29 | 1998-11-05 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5096856A (en) * | 1988-03-01 | 1992-03-17 | Texas Instruments Incorporated | In-situ doped silicon using tertiary butyl phosphine |
| US5244822A (en) * | 1988-05-16 | 1993-09-14 | Kabushiki Kaisha Toshiba | Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| US5096842A (en) * | 1988-05-16 | 1992-03-17 | Kabushiki Kaisha Toshiba | Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| US5250388A (en) * | 1988-05-31 | 1993-10-05 | Westinghouse Electric Corp. | Production of highly conductive polymers for electronic circuits |
| US5198387A (en) * | 1989-12-01 | 1993-03-30 | Texas Instruments Incorporated | Method and apparatus for in-situ doping of deposited silicon |
| EP0459763B1 (en) * | 1990-05-29 | 1997-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistors |
| TW237562B (enExample) * | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
| US5334880A (en) * | 1991-04-30 | 1994-08-02 | International Business Machines Corporation | Low voltage programmable storage element |
| JP3315730B2 (ja) * | 1991-08-26 | 2002-08-19 | マイクロリス、コーパレイシャン | ピエゾ抵抗半導体センサ・ゲージ及びこれを作る方法 |
| US5766344A (en) * | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
| JP2830718B2 (ja) * | 1993-09-30 | 1998-12-02 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
| US6040019A (en) * | 1997-02-14 | 2000-03-21 | Advanced Micro Devices, Inc. | Method of selectively annealing damaged doped regions |
| US6319743B1 (en) | 1999-04-14 | 2001-11-20 | Mykrolis Corporation | Method of making thin film piezoresistive sensor |
| US6255185B1 (en) | 1999-05-19 | 2001-07-03 | International Business Machines Corporation | Two step anneal for controlling resistor tolerance |
| DE10053957C2 (de) * | 2000-10-31 | 2002-10-31 | Infineon Technologies Ag | Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung |
| US6621404B1 (en) * | 2001-10-23 | 2003-09-16 | Lsi Logic Corporation | Low temperature coefficient resistor |
| US7872897B2 (en) * | 2003-04-11 | 2011-01-18 | International Business Machines Corporation | Programmable semiconductor device |
| KR20100040455A (ko) * | 2008-10-10 | 2010-04-20 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
| CN110359032A (zh) * | 2019-07-18 | 2019-10-22 | 北京北方华创微电子装备有限公司 | 温度补偿方法及恒温区温度校准方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
| JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
| FR2394173A1 (fr) * | 1977-06-06 | 1979-01-05 | Thomson Csf | Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede |
| JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
| US4198246A (en) * | 1978-11-27 | 1980-04-15 | Rca Corporation | Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film |
-
1979
- 1979-08-10 US US06/065,437 patent/US4229502A/en not_active Expired - Lifetime
-
1980
- 1980-07-25 IT IT23728/80A patent/IT1131995B/it active
- 1980-07-30 GB GB8024960A patent/GB2056173B/en not_active Expired
- 1980-07-31 DE DE19803029055 patent/DE3029055A1/de not_active Withdrawn
- 1980-08-07 JP JP10909080A patent/JPS5629321A/ja active Pending
- 1980-08-08 FR FR8017598A patent/FR2463507A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2463507A1 (fr) | 1981-02-20 |
| GB2056173B (en) | 1983-09-14 |
| IT8023728A0 (it) | 1980-07-25 |
| JPS5629321A (en) | 1981-03-24 |
| FR2463507B1 (enExample) | 1984-10-19 |
| IT1131995B (it) | 1986-06-25 |
| GB2056173A (en) | 1981-03-11 |
| US4229502A (en) | 1980-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |