DE3022565A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE3022565A1
DE3022565A1 DE19803022565 DE3022565A DE3022565A1 DE 3022565 A1 DE3022565 A1 DE 3022565A1 DE 19803022565 DE19803022565 DE 19803022565 DE 3022565 A DE3022565 A DE 3022565A DE 3022565 A1 DE3022565 A1 DE 3022565A1
Authority
DE
Germany
Prior art keywords
layer
region
area
semiconductor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19803022565
Other languages
German (de)
English (en)
Inventor
Ichiro Imaizumi
Masao Kawamura
Takao Miyazaki
Minoru Nagata
Tohru Nakamura
Takahiro Okabe
Susumu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to DE3051130A priority Critical patent/DE3051130C2/de
Publication of DE3022565A1 publication Critical patent/DE3022565A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19803022565 1979-06-18 1980-06-16 Halbleiteranordnung Withdrawn DE3022565A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3051130A DE3051130C2 (de) 1979-06-18 1980-06-16 Verfahren zur Herstellung eines Bipolartransistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7571579A JPS561556A (en) 1979-06-18 1979-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3022565A1 true DE3022565A1 (de) 1981-01-08

Family

ID=13584214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803022565 Withdrawn DE3022565A1 (de) 1979-06-18 1980-06-16 Halbleiteranordnung

Country Status (3)

Country Link
US (2) US4933737A (forum.php)
JP (1) JPS561556A (forum.php)
DE (1) DE3022565A1 (forum.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140369A1 (en) * 1983-11-02 1985-05-08 Hitachi, Ltd. Semiconductor integrated circuit including series connected transistors
WO1985002714A1 (en) * 1983-12-05 1985-06-20 Ncr Corporation Method of making a bipolar junction transistor
EP0390661A1 (fr) * 1989-03-31 1990-10-03 Thomson-Csf Procédé de modulation dirigée de la composition ou du dopage de semiconducteurs, notamment pour la réalisation de composants électroniques monolithiques de type planar, utilisation et produits correspondants

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122158A (en) * 1980-03-03 1981-09-25 Toshiba Corp Semiconductor device
JPS57148370A (en) * 1981-03-10 1982-09-13 Nec Corp Semiconductor device
JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
US4860086A (en) * 1983-08-30 1989-08-22 Hitachi, Ltd. Semiconductor device
GB8329740D0 (en) * 1983-11-08 1983-12-14 Ti Group Services Ltd Heat pipe system
US4832364A (en) * 1985-01-28 1989-05-23 Toyota Jidosha Kabushiki Kaisha Rear suspension for vehicle
JP2741854B2 (ja) 1986-06-18 1998-04-22 株式会社日立製作所 半導体集積回路装置
US4949162A (en) * 1987-06-05 1990-08-14 Hitachi, Ltd. Semiconductor integrated circuit with dummy pedestals
JP2613598B2 (ja) * 1987-07-10 1997-05-28 株式会社日立製作所 半導体装置
US5227660A (en) * 1987-11-09 1993-07-13 Hitachi, Ltd. Semiconductor device
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
US5237200A (en) * 1989-07-28 1993-08-17 Hitachi, Ltd. Semiconductor bipolar transistor with concentric regions
JPH04373133A (ja) * 1991-06-24 1992-12-25 Hitachi Ltd 半導体装置
US10720853B1 (en) * 2017-11-07 2020-07-21 Matthew Barlow Integrated silicon carbide diode rectifier circuits
US11251717B1 (en) 2017-11-07 2022-02-15 Matthew Barlow Integrated silicon carbide diode rectifier circuits

Citations (4)

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Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
DE2233699A1 (de) * 1971-07-07 1973-01-25 Battelle Memorial Institute Verfahren zur erhoehung der abreibfestigkeit der oberflaeche von hartmetallteilen
DE1764313C2 (de) 1967-05-18 1976-08-26 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zum Herstellen von Hochfrequenztransistoren mit einer zwei Bereiche unterschiedlicher Dotierung aufweisenden Basiszone
DE2818090A1 (de) 1977-04-25 1978-11-02 Nippon Telegraph & Telephone Bipolartransistor und verfahren zur herstellung desselben

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US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3577045A (en) * 1968-09-18 1971-05-04 Gen Electric High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
US3768150A (en) * 1970-02-13 1973-10-30 B Sloan Integrated circuit process utilizing orientation dependent silicon etch
US3631307A (en) * 1970-02-13 1971-12-28 Itt Semiconductor structures having improved high-frequency response and power dissipation capabilities
US3740276A (en) * 1970-08-24 1973-06-19 Texas Instruments Inc Multi-component semiconductor network and method for making same
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
US3776786A (en) * 1971-03-18 1973-12-04 Motorola Inc Method of producing high speed transistors and resistors simultaneously
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
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JPS5244186A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor intergrated circuit device
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JPS6054453A (ja) * 1983-09-05 1985-03-28 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
JPS6092661A (ja) * 1983-10-27 1985-05-24 Toshiba Corp 半導体装置
JPH0618198B2 (ja) * 1984-02-15 1994-03-09 株式会社日立製作所 半導体装置
US4782030A (en) * 1986-07-09 1988-11-01 Kabushiki Kaisha Toshiba Method of manufacturing bipolar semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764313C2 (de) 1967-05-18 1976-08-26 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zum Herstellen von Hochfrequenztransistoren mit einer zwei Bereiche unterschiedlicher Dotierung aufweisenden Basiszone
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
DE2233699A1 (de) * 1971-07-07 1973-01-25 Battelle Memorial Institute Verfahren zur erhoehung der abreibfestigkeit der oberflaeche von hartmetallteilen
DE2818090A1 (de) 1977-04-25 1978-11-02 Nippon Telegraph & Telephone Bipolartransistor und verfahren zur herstellung desselben

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* Cited by examiner, † Cited by third party
Title
KAMINS, Theodore I.: Chemically Vapor Deposited Polycrystalline-Silicon Films. In: IEEE Transactions on Parts, Hybrids, and Packaging, 1974, Vol. PHP-10, Nr. 4, S. 221-229
Kamins, Theodore J.: Chemically Vapor Deposited Polycristalline-Silicon Films. In: IEEE Transactions on Parts, Hybrids and Packaging, 1974, Vol PHP-10, Nr. 4, S. 221 *
Wieder, A.W.: Self-Aligned Submicron Almost Ideal Transistor. In: IBM Technical Disclosure Bulletin, 1979, Vol. 21, Nr. 8, S. 3166 *
WIEDER, A.W.: Self-Aligned Submicron Almost Ideal Transistor. In: IBM Technical Disclosure Bulletin, 1979, Vol. 21, Nr. 8, S. 3166-3169

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140369A1 (en) * 1983-11-02 1985-05-08 Hitachi, Ltd. Semiconductor integrated circuit including series connected transistors
WO1985002714A1 (en) * 1983-12-05 1985-06-20 Ncr Corporation Method of making a bipolar junction transistor
EP0390661A1 (fr) * 1989-03-31 1990-10-03 Thomson-Csf Procédé de modulation dirigée de la composition ou du dopage de semiconducteurs, notamment pour la réalisation de composants électroniques monolithiques de type planar, utilisation et produits correspondants
FR2645345A1 (fr) * 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
US5294564A (en) * 1989-03-31 1994-03-15 Thomson-Csf Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products

Also Published As

Publication number Publication date
US5019523A (en) 1991-05-28
JPS561556A (en) 1981-01-09
JPH0123949B2 (forum.php) 1989-05-09
US4933737A (en) 1990-06-12

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