DE3019851A1 - Verfahren zur herstellung einer lithographie-maske und mit einem solchen verfahren hergestellte maske - Google Patents
Verfahren zur herstellung einer lithographie-maske und mit einem solchen verfahren hergestellte maskeInfo
- Publication number
- DE3019851A1 DE3019851A1 DE19803019851 DE3019851A DE3019851A1 DE 3019851 A1 DE3019851 A1 DE 3019851A1 DE 19803019851 DE19803019851 DE 19803019851 DE 3019851 A DE3019851 A DE 3019851A DE 3019851 A1 DE3019851 A1 DE 3019851A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- photoresist
- mask
- substrate
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0002—Apparatus or processes for manufacturing printed circuits for manufacturing artworks for printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- ing And Chemical Polishing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/052,292 US4293624A (en) | 1979-06-26 | 1979-06-26 | Method for making a mask useful in X-ray lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3019851A1 true DE3019851A1 (de) | 1981-01-15 |
DE3019851C2 DE3019851C2 (en, 2012) | 1992-08-20 |
Family
ID=21976648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19803019851 Granted DE3019851A1 (de) | 1979-06-26 | 1980-05-23 | Verfahren zur herstellung einer lithographie-maske und mit einem solchen verfahren hergestellte maske |
Country Status (3)
Country | Link |
---|---|
US (1) | US4293624A (en, 2012) |
JP (1) | JPS565981A (en, 2012) |
DE (1) | DE3019851A1 (en, 2012) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4379833A (en) * | 1981-12-31 | 1983-04-12 | International Business Machines Corporation | Self-aligned photoresist process |
US4654295A (en) * | 1983-12-05 | 1987-03-31 | Energy Conversion Devices, Inc. | Method of making short channel thin film field effect transistor |
US4632871A (en) * | 1984-02-16 | 1986-12-30 | Varian Associates, Inc. | Anodic bonding method and apparatus for X-ray masks |
US4677042A (en) * | 1984-11-05 | 1987-06-30 | Canon Kabushiki Kaisha | Mask structure for lithography, method for preparation thereof and lithographic method |
US4964146A (en) * | 1985-07-31 | 1990-10-16 | Hitachi, Ltd. | Pattern transistor mask and method of using the same |
US4687730A (en) * | 1985-10-30 | 1987-08-18 | Rca Corporation | Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition |
US4711822A (en) * | 1986-01-15 | 1987-12-08 | Westinghouse Electric Corp. | Metal core printed circuit boards |
US4713315A (en) * | 1986-12-09 | 1987-12-15 | Smith David V | Wire tag etching system |
US5118584A (en) * | 1990-06-01 | 1992-06-02 | Eastman Kodak Company | Method of producing microbump circuits for flip chip mounting |
US5356756A (en) | 1992-10-26 | 1994-10-18 | The United States Of America As Represented By The Secretary Of Commerce | Application of microsubstrates for materials processing |
JP3233350B2 (ja) * | 1997-04-25 | 2001-11-26 | トヨタ自動車株式会社 | 積層造形に用いられるマスク、マスクの製造方法及びマスクの使用方法 |
US6485892B1 (en) * | 1999-12-17 | 2002-11-26 | International Business Machines Corporation | Method for masking a hole in a substrate during plating |
JP3592310B2 (ja) | 2001-06-05 | 2004-11-24 | 住友電工スチールワイヤー株式会社 | マグネシウム基合金ワイヤおよびその製造方法 |
US20080045706A1 (en) * | 2002-12-31 | 2008-02-21 | Flynn Daniel L | Anti-inflammatory medicaments |
US7704646B2 (en) * | 2004-11-08 | 2010-04-27 | Lg Innotek Co., Ltd. | Half tone mask and method for fabricating the same |
US8163185B1 (en) * | 2008-03-31 | 2012-04-24 | Western Digital (Fremont), Llc | Method and apparatus for lifting off photoresist beneath an overlayer |
WO2012092301A2 (en) * | 2010-12-29 | 2012-07-05 | Intevac, Inc. | Method and apparatus for masking substrates for deposition |
US9141157B2 (en) * | 2011-10-13 | 2015-09-22 | Texas Instruments Incorporated | Molded power supply system having a thermally insulated component |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1906755A1 (de) * | 1969-02-11 | 1970-09-03 | Siemens Ag | Verfahren zur Herstellung von Duennschichtstrukturen auf Substraten und nach diesem Verfahren hergestellte Photomaske |
US4018938A (en) * | 1975-06-30 | 1977-04-19 | International Business Machines Corporation | Fabrication of high aspect ratio masks |
US4174219A (en) * | 1976-12-23 | 1979-11-13 | International Business Machines Corporation | Method of making a negative exposure mask |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767398A (en) * | 1971-10-26 | 1973-10-23 | C Morgan | Solid photoresist comprising a polyene and a polythiol |
US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
US4022927A (en) * | 1975-06-30 | 1977-05-10 | International Business Machines Corporation | Methods for forming thick self-supporting masks |
US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
-
1979
- 1979-06-26 US US06/052,292 patent/US4293624A/en not_active Expired - Lifetime
-
1980
- 1980-05-23 DE DE19803019851 patent/DE3019851A1/de active Granted
- 1980-06-26 JP JP8597580A patent/JPS565981A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1906755A1 (de) * | 1969-02-11 | 1970-09-03 | Siemens Ag | Verfahren zur Herstellung von Duennschichtstrukturen auf Substraten und nach diesem Verfahren hergestellte Photomaske |
US4018938A (en) * | 1975-06-30 | 1977-04-19 | International Business Machines Corporation | Fabrication of high aspect ratio masks |
US4174219A (en) * | 1976-12-23 | 1979-11-13 | International Business Machines Corporation | Method of making a negative exposure mask |
Also Published As
Publication number | Publication date |
---|---|
JPS565981A (en) | 1981-01-22 |
DE3019851C2 (en, 2012) | 1992-08-20 |
US4293624A (en) | 1981-10-06 |
JPS6330990B2 (en, 2012) | 1988-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |